Apparatus comprising a quantum well device and method of operating the apparatus

• US 5,023,878 A
• Filed: 09/15/1989
• Issued: 06/11/1991
• Est. Priority Date: 09/15/1989
• Status: Expired due to Term

• Current Assignee: AT&T, Inc.
• Original Assignee: AT&T, Inc.
• Inventors: Berthold, Kurt, Levi, Anthony F. J.
• Primary Examiner(s): Davie, James W.
• Application Number:
  US07/407,608
• Time in Patent Office: 634 Days
• Field of Search: 372/20, 372/26, 372/50, 372/8, 372/96
• US Class Current: 372/20
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: G02F 3/00 Optical logic elements; Optical bistable devices
• CPC Class Codes: H01S 3/1061 using a variable absorption device
• CPC Class Codes: H01S 5/0265 Intensity modulators intra-cavity modulators H01S5/0625
• CPC Class Codes: H01S 5/0601 comprising an absorbing region H01S5/0604, H01S5/0607, H01S5/0615 and H01S5/065 take precedence; bistable laser devices in general G02F3/026
• CPC Class Codes: H01S 5/0624 controlling the near- or far field
• CPC Class Codes: H01S 5/06243 controlling the position or direction of the emitted beam
• CPC Class Codes: H01S 5/0625 in multi-section lasers
• CPC Class Codes: H01S 5/187 using Bragg reflection
• CPC Class Codes: H01S 5/34 comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers H01S5/36 takes precedence
• CPC Class Codes: H01S 5/3418 using transitions from higher quantum levels
• CPC Class Codes: H01S 5/50 Amplifier structures not provided for in groups H01S5/02 - H01S5/30

Abstract

The inventive quantum well opto-electronic devices of cavity length L_C comprise, in addition to a "gain" section, a "loss" section that is optically coupled to the gain section but electrically substantially isolated therefrom. Through change of the electrical bias on the loss section the modal gain of the cavity can be changed. Devices according to the invention are useful in a variety of applications. Exemplarily, by making (in an inventive laser) L_C /L_A greater than about 20 (L_A is the length of the loss section) and making the electrical isolation between the gain section and the loss section greater than about 3 kΩ, fast amplitude modulation of the laser radiation is possibly. By applying appropriate AR coatings to the cavity of an inventive device, a fast variable-gain optical amplifier can be made. Finally, an inventive laser can be switched electrically between two widely spaced wavelengths, the wavelength difference being at least 10 nm. This makes possible use of inventive devices in apparatus such as information storage systems, information processing systems, and communication systems. Methods of operating such apparatus are also disclosed.

Claims

1. Method of using apparatus comprising a laser that comprises a semiconductor body, the body comprising a gain section and, optically coupled to the gain section but electrically substantially isolated therefrom, a loss section, the apparatus further comprising means for causing the flow of an electrical current through the gain section, and still further comprising means for electrically biasing the loss section, the body comprising at least one quantum well, associated with the body being a length L_C and a gain for radiation of a given wavelength, and associated with the quantum well being first and second energy sub-bands;

and the apparatus further comprising means for utilizing radiation emitted by the laser;

wherein the method comprises

(a) causing the flow of an electrical current through the gain section;

(b) electrically biasing the loss section, the electrical bias selected such that the laser emits first radiation of wavelength λ

₁ ;

characterized in that the apparatus also comprises means for changing the bias conditions on the loss section, and the method further comprises

(c) changing the bias conditions on the loss section without changing L_C, such that the laser emits second radiation of wavelength λ

₂ different from λ

₁, with |λ

₁ -λ

₂ | being at least 10 nm.

2. Method of claim 1, wherein changing the bias conditions comprises changing the electrical bias.

3. Method of claim 1, wherein changing the bias conditions comprises exposing the loss section to optical pump radiation.

4. Method of claim 1, wherein L_C /L_A ≳

10, where L_A is the length of the loss section.

5. Method of claim 1, wherein the laser, the means for causing the flow of an electrical current through the gain section, and the means for applying a bias voltage to the loss section are located on a common semiconductor member.

6. Method of claim 5, wherein a source of pump radiation is is provided on the common semiconductor member.

7. Method of claim 1, comprising monitoring a current flowing in the means for making electrical contact to the loss section, and changing the current through the gain section and/or the bias voltage applied to the loss section in response to the monitored current.

8. Method of claim 1, wherein the semiconductor body comprises at least two loss sections, each loss section being optically coupled to the gain section but being electrically substantially isolated from the gain section and from the other loss section, with each given loss section being associated means for changing the bias conditions on the given loss section, the method comprising setting the current through the gain section and changing the bias conditions such that the laser emits first or second radiation according to a pre-determined truth table.

9. Method of claim 1, wherein the semiconductor body further comprises a grating, associated with the emitted radiation being an angle of emission, the grating selected such that the angle of emission for the first radiation differs from the angle of emission for the second radiation.

10. Method of claim 1, wherein the first radiation is associated with electronic transitions from one of the first and second sub-bands, and the second radiation is associated with electronic transitions from the other of the first and second sub-bands.

11. Apparatus comprising a laser that comprises a semiconductor body, the body comprising a gain section and, optically coupled to the gain section but electrically substantially isolated therefrom, a loss section, associated with the body being a length L_C and a gain for radiation of a given wavelength, the body comprising at least one quantum well, associated with the quantum well being a first and a second energy sub-band;

the apparatus further comprising

(a) means for causing the flow of an electrical current through the gain section;

(b) means for changing the bias conditions on the loss section, the means comprising means for applying an electrical bias to the loss section; and

(c) means for utilizing radiation emitted by the laser;

characterized in that

(d) the means of (b) permit changing, without changing L_C, the bias conditions on loss section from a first value associated with the emission of first radiation of wavelength λ

₁ to a second value that is associated with the emission of second radiation of wavelength λ

₂, with |λ

₁ -λ

₂ | being at least 10 nm.

12. Apparatus of claim 11, wherein the first radiation is associated with electronic transitions from one of the first and second sub-bands, and the second radiation is associated with electronic transitions from the other of the first and second sub-bands.

13. Apparatus comprising a laser that comprises a semiconductor body, the body comprising a gain section and, optically coupled to the gain section but electrically substantially isolated therefrom, a loss section of length L_A, the apparatus further comprising means for causing the flow of an electrical current through the gain section, and still further comprising means for electrically biasing the loss section, the body comprising at least one quantum well, associated with the body being a length L_C and a gain for radiation of a given wavelength, and the apparatus further comprising means for utilizing radiation emitted by the laser;

characterized in that

(a) L_C /L_A is greater than 20; and

(b) an electrical isolation resistance between the gain section and the loss section is at least about 3 kΩ

;

whereby the gain for radiation of the given wavelength can be changed by changing the loss section bias, and whereby fast modulation of radiation emitted by the laser can be attained.