Method for producing a semiconductor device using an electron beam exposure tool and apparatus for producing the device

• US 5,025,165 A
• Filed: 03/26/1990
• Issued: 06/18/1991
• Est. Priority Date: 03/26/1990
• Status: Expired due to Term

• Current Assignee: American Telephone & Telegraph Company (AT&T, Inc.)
• Original Assignee: AT&T, Inc.
• Inventors: Chen, Chin-Chin, Feldman, Martin, Waggener, Herbert A.
• Primary Examiner(s): Anderson, Bruce C.
• Application Number:
  US07/499,153
• Time in Patent Office: 449 Days
• Field of Search: 250/491.1, 250/442.1, 219/121.23
• US Class Current: 250/491.1
• CPC Class Codes: G03F 9/7049 Technique, e.g. interferometric
• CPC Class Codes: H01J 37/3045 Object or beam position registration

Abstract

Conventional alignment procedures in electron beam (e-beam) direct write systems typically use an e-beam exposure tool as a scanning electron microscope (SEM) to imagine wafer alignment marks. However, electrical charging of the wafer surface by the electron beam can typically result in image distortions which generally can lead to alignment inaccuracies. The inventive method and apparatus advantageously overcome the alignment inaccuracies associated with the charging effects, by optically aligning the wafer to a reference axis of the electron beam. In a preferred embodiment of this invention, light is focused on a diffraction grating on the wafer, used as an alignment mark, and the diffracted light is spatially filtered and detected. Spatially filtering the diffracted light, eliminating the 0th order of the diffracted light, provides increased depth of focus. Also in this particular embodiment, travel of the wafer stage for optical alignment remains below the electron lens column by mounting an optical head (used for directing light onto the wafer, for spatially filtering the diffracted light, and for directing the spatially filtered light to the detection means) to the pole tip of the electron lens column. Significantly, the optical head comprises a lens section cut from a relatively larger lens providing a large working distance and numerical aperture without restricting movement, below the pole tip, of the wafer stage with a wafer mounted thereon.

Claims

1. Method of producing a semiconductor device comprising:

a) providing a semiconductor body with a processing layer and at least one alignment mark on a major surface of the body;

b) introducing the body into an electron beam exposure tool, associated with the exposure tool being an electron beam reference axis;

c) aligning the body with respect to the electron beam reference axis;

d) exposing, in the exposure tool, a selected portion of the processing layer to an electron beam; and

e) carrying out one or more further steps toward completion of the semiconductor device;

characterized in that

the alignment mark on the body comprises a diffraction grating,

the electron beam exposure tool comprises optical alignment means, step (c) comprises

f) aligning the body relative to a beam of optical radiation associated with the optical alignment means, the beam of optical radiation being a predetermined distance in a predetermined direction from the electron beam reference axis; and

further comprises

g) moving the body in the electron beam exposure tool such that the selected portion of the processing layer is aligned to the electron beam reference axis; and

step f) comprises diffracting light from the alignment mark, with the diffracted light comprising +1,0, and -1 orders of diffraction;

spatially filtering the diffracted light, and detecting the +1, -1 diffracted orders of the spatially filtered light.

2. Method of claim 1, wherein detecting the +1, -1 diffracted orders of spatially filtered light comprises directing the light through at least a portion of a Ronchi grating onto one or more photodiodes, the Ronchi grating having double the spatial frequency of the image of the alignment mark on the body.

3. Electron-beam apparatus comprising:

a) means for generating an electron beam, associated with the electron beam being an electron beam reference axis;

b) means for rastering the electron beam about the electron beam reference axis; and

c) a movable stage for holding a semiconductor body;

characterized in that

the apparatus further comprises

d) means for directing a beam of electromagnetic radiation onto a major surface of a semiconductor body placed onto the movable stage, such that when the beam is directed onto an appropriately patterned portion of the surface, electromagnetic radiation is reflected from the surface, the reflected radiation comprising orders of diffraction respectively indexed -1, 0, and +1,

e) means for directing at least a portion of the reflected radiation towards means for detecting the radiation, and

f) means for spatially filtering the diffracted radiation such that the 0th order diffracted radiation is substantially eliminated from the radiation that is directed towards the detection means.

4. Apparatus of claim 3, further comprising means for combining the +1 and -1 orders of diffracted radiation.

5. Apparatus of claim 4, wherein the moveable stage is located in a vacuum chamber, and wherein the apparatus further comprises a source of the electromagnetic radiation, both the source and the one or more detectors being located outside of the vacuum chamber.

6. Apparatus of claim 5, wherein the source of electromagnetic radiation comprises a multiwavelength HeNe laser;

the optical head comprises a beam splitter to direct the electromagnetic radiation onto the semiconductor body in two orthogonal directions, optical lens with thicknesses between 0.0025 cm and 0.5 cm for focusing the electromagnetic radiation onto the body, and mirrors cut at 45°

for directing the electromagnetic radiation from the lens to the body;

the moveable stage comprises an interferometric stage;

the means for combining the +1 and -1 orders of diffracted radiation comprises a Ronchi grating, the Ronchi grating being located outside the vacuum chamber; and

the means for detecting the combined +1 and -1 orders of diffracted radiation comprises photodiodes.

7. Apparatus of claim 3, wherein the electron-beam apparatus comprises an electron lens, associated with the electron lens being a pole tip that is adjacent to but spaced apart from the moveable stage;

and wherein the optical head is mounted on the pole tip such that movement of the stage with a semiconductor body thereon in a plane normal to the electron beam reference axis is not restricted by the optical head.

8. Apparatus of claim 7, wherein the optical head comprises a section of a lens having a thickness between 0.0025 cm and 0.5 cm.

9. Apparatus of claim 3, wherein associated with the optical alignment means is a depth of focus, the depth of focus being greater than 1 μ

m.