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Center tapped FET

  • US 5,025,296 A
  • Filed: 09/04/1990
  • Issued: 06/18/1991
  • Est. Priority Date: 02/29/1988
  • Status: Expired due to Fees
First Claim
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1. A field effect transistor including in combination:

  • a first active semiconductor area;

    a first source conductor and a first drain conductor located on said first active semiconductor area;

    a second active semiconductor area located adjacent to but separated from said first active semiconductor area;

    a second source conductor and a second drain conductor located on said second active semiconductor area;

    an inactive area located between said first active semiconductor area and said second active semiconductor area;

    gate bus means located on said inactive area;

    first gate finger contact means extending from said gate bus means in a first direction across a portion of said inactive area and across a portion of said first active semiconductor area between said first source conductor and said first drain conductor;

    second gate finger contact means extending from said gate bus means in a direction opposite to said first direction across a portion of said inactive area and across a portion of said second active semiconductor area between said second source area and said second drain area; and

    said gate finger contact means and said source and drain conductors all being located in the same plane.

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