Semiconductor light beam position sensor element and a position sensor and a picture image input device each using the same

• US 5,025,297 A
• Filed: 03/07/1989
• Issued: 06/18/1991
• Est. Priority Date: 03/07/1988
• Status: Expired due to Fees

• Current Assignee: Kanegafuchi Chemical Industry Co. Ltd. (Kaneka Corporation)
• Original Assignee: Kanegafuchi Chemical Industry Co. Ltd. (Kaneka Corporation)
• Inventors: Murakami, Satoru, Kondo, Masataka, Yamaguchi, Minori, Hayashi, Akimine, Tawada, Yoshihisa
• Primary Examiner(s): MINTEL, WILLIAM A
• Application Number:
  US07/320,149
• Time in Patent Office: 833 Days
• Field of Search: 357/15, 357/55, 357/30, 357/88, 357/30 K, 357/30 Q, 357/30 D, 357/30 P, 357/30 G, 357/30 L, 357/19, 357/32, 357/2, 250/206.1, 250/206.2
• US Class Current: 257/458
• CPC Class Codes: H01L 31/02024 Position sensitive and lateral effect photodetectors; Quadrant photodiodes
• CPC Class Codes: H01L 31/022466 made of transparent conductive layers, e.g. TCO, ITO layers
• CPC Class Codes: H01L 31/03921 including only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 31/1055 the devices comprising amorphous materials of Group IV of the Periodic Table
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy

Abstract

A transparent semiconductor light beam position sensor element comprises a semiconductor layer consisting of p-, i- and n-type semiconductor layers successively bonded in junction and an electrically conductive layer disposed on either side of the semiconductive layer, at least one of the conductive layers being material transparent material, at least the other conductive layer and the semiconductor layer being provided with a multiplicity of common apertures running in the thickness direction and at least one conductive layer being provided with one pair or two pairs of electrodes of opposite polarities as disposed in its marginal regions. A position sensor utilizing the sensor element comprises a light source capable of varying the position of incidence of light on the position sensor element and a means for detecting the level of light incident on the element and holding the level constant, wherein the point of incidence of light can be identified from the photoelectric current output from one electrode of the electrode pair. A picture image input device utilizing the semiconductor light beam position sensor element further comprises a means for outputting a position signal representative of the point of incidence of light on the sensor element according to the photoelectric current output derived from the electrode pair and a means for outputting a bright dark signal representative of the intensity of light incident on the sensor element after passing or being reflected by an original according to the photoelectric current output derived from the electrode pair.

Claims

1. A semiconductor light beam position sensor element comprising a semiconductor layer composed of p-type, i-type and n-type semiconductors successively formed and two electrically conductive layers one of which is disposed on one side of said semiconductor layer with the other of which on the other side, at least one of said electrically conductive layers being made of a transparent material, at least the other electrically conductive layer and said semiconductor layer having a multiplicity of common apertures running in the thickness direction of the element, the apertures being filled with one of translucent and transparent material and at least one of said electrically conductive layers being provided with at least one pair of electrodes of opposite polarities in marginal regions thereof.

2. A semiconductor light beam position sensor element as claimed in claim 1 wherein said semiconductor layer is composed of crystalline semiconductors.

3. A semiconductor light beam position sensor element as claimed in claim 1 wherein said semiconductor layer is composed of amorphous semiconductors.

4. A semiconductor light beam position sensor element as claimed in claim 1 wherein said semiconductor layer is a hetero-junction layer with an amorphous silicon carbide film at least on a light-incident side layer.

5. A semiconductor light beam position sensor element as claimed in claim 1 wherein said electrically conductive layer made of a transparent material is constituted by an ITO film with a thickness ranging from about 100 to 2000 Å

.

6. A semiconductor light beam position sensor element as claimed in claim 1 wherein said semiconductor layer is provided with a pair of electrodes of opposed polarities on one side thereof in opposing marginal positions in the longitudinal direction of the element.

7. A semiconductor light beam position sensor element as claimed in claim 1 wherein said semiconductor layer is provided with a pair of electrodes of opposite polarities on one side thereof and another pair of electrodes on the other side in geometrically intersecting relation with the first-mentioned pair of electrodes.

8. The semiconductor light beam position sensor element as claimed in claim 1, which is provided with one pair of electrodes on one side of said semiconductor layer and another pair of electrodes on the same side in geometrically intersecting relation with the first-mentioned pair of electrodes.