Semiconductor device with substrate misorientation

• US 5,027,169 A
• Filed: 06/01/1990
• Issued: 06/25/1991
• Est. Priority Date: 06/07/1989
• Status: Expired due to Term

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Hosoda, Masahiro, Kondo, Masafumi, Takahashi, Kosei, Tsunoda, Atsuo, Suyama, Takahiro
• Primary Examiner(s): MINTEL, WILLIAM A
• Application Number:
  US07/531,386
• Time in Patent Office: 389 Days
• Field of Search: 357/4, 357/16, 357/60, 357/17
• US Class Current: 257/628
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01L 21/02392 Phosphides
• CPC Class Codes: H01L 21/02395 Arsenides
• CPC Class Codes: H01L 21/02398 Antimonides
• CPC Class Codes: H01L 21/02433 Crystal orientation
• CPC Class Codes: H01L 21/02461 Phosphides
• CPC Class Codes: H01L 21/02463 Arsenides
• CPC Class Codes: H01L 21/02507 Alternating layers, e.g. superlattice
• CPC Class Codes: H01L 21/02543 Phosphides
• CPC Class Codes: H01L 21/02546 Arsenides
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 29/045 by their particular orientation of crystalline planes
• CPC Class Codes: H01L 33/0062 for devices with an active region comprising only III-V compounds
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/16 with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous

Abstract

A semiconductor device comprising a (111)B single-crystalline semiconductor substrate which is misoriented toward (110), and epitaxial layers grown on the substrate by molecular beam epitaxy, whereby the crystallinity and luminescence efficiency of epitaxial layers are significantly improved.

Claims

1. A semiconductor device comprising a (111)B single-crystal semiconductor substrate that is misoriented toward (110) and epitaxial layers that are grown on said substrate by molecular beam epitaxy;

wherein the misorientation angle of said substrate is within the range of 2.5°

to 4.0°

.

2. A semiconductor device according to claim 1, wherein said single crystal semiconductor substrate is made of a material selected from the group consisting of GaAs, GaSb, InAs, InP, GaP, and InSb.

3. A semiconductor device according to claim 1, wherein said epitaxial layers are made of the group III-V compound semiconductors.