Merged bipolar and insulated gate transistors

• US 5,028,977 A
• Filed: 06/16/1989
• Issued: 07/02/1991
• Est. Priority Date: 06/16/1989
• Status: Expired due to Term

• Current Assignee: Massachusetts Institute of Technology
• Original Assignee: Massachusetts Institute of Technology
• Inventors: Lee, Hae-Seung, Reif, L. Rafael, K. O. Kenneth
• Primary Examiner(s): Hille, Rolf
• Assistant Examiner(s): Fahmy, Wael
• Application Number:
  US07/367,387
• Time in Patent Office: 746 Days
• Field of Search: 357/43, 357/42, 357/35, 357/23.4
• US Class Current: 257/370
• CPC Class Codes: H01L 27/0716 in combination with vertical bipolar transistors and diodes, or capacitors, or resistors

Abstract

A vertical bipolar transistor is formed along with an IGFET transistor in a process in which the bipolar transistor collector, base and emitter structure is formed in the body of a semiconductor mesa-like structure while the IGFET transistor is formed in and along one of the sidewalls of the structure. Source and drain regions are formed in the structure by ion-implantation using a polysilicon gate electrode formed over a gate insulator on the sidewall as a self-aligning mask.

Claims

1. A plurality of merged vertical transistors and sidewall insulated gate transistor structures formed on a common substrate comprising:

(a) a plurality of vertical transistors structures formed over an isolation region, which region is vertically and laterally electrically isolated from other portions of the common substrate and having at least;

(i) a vertical transistor collector layer extending in a plane and formed of a first type conductivity semiconductor material;

(ii) a vertical transistor base region formed of opposite type conductivity semiconductor material over said collector layer, said base region comprising an upper surface and a lower surface with sidewalls extending from said upper surface to said lower surface at an angle to said plane and wherein said collector layer is removed where one of said sidewalls intersects said plane to form a first mesa-like structure and expose a semiconductor junction at the intersection;

(iii) an emitter region formed in said base region; and

(b) an insulated gate transistor formed in and along one of said sidewalls and wherein the insulated gate transistor comprises a gate insulator formed on said sidewall and extending over said base region, a gate electrode formed on said gate insulator, a source region formed in said base region and extending laterally along said base region and a drain region formed in said collector layer.

2. The structure of claim 1 wherein the vertical transistor is an n-p-n transistor and the insulated gate transistor has n-type drain and source regions.

3. The structure of claim 1 wherein the vertical transistor is a n-p-n transistor and the insulated gate transistor has p-type drain and source regions.

4. The structure of claim 1 wherein a base contact is formed in the base region in contact with the source region of the insulated gate transistor.

5. The structure of claim 1 wherein the isolation region comprises a buried layer which is insulated from the substrate by a well of semiconductor material of opposite type conductivity to the conductivity of the buried layer, which layer is encircled by an insulator region.

6. The structure of claim 2 wherein region and emitter region are common to each other.

7. The structure of claim 3 including a second mesa-like structure formed in said collector layer and base region adjacent said first mesa-like structure with an exposed semiconductor junction and an insulated gate transistor formed in said second mesa-like structure.

8. The structure of claim 7 wherein the insulated gate transistor includes a p-type drain region in common with the source region of the insulated gate transistor formed in and along the first mesa-like structure.

9. The structure of claim 2 wherein the gate electrode extends over the top and bottom of the sidewall.

10. The structure of claim 3 wherein the gate electrode terminates at the top and bottom of the sidewall.

11. The structure of claim 4 wherein the source region abuts the sidewall of the mesa-like structure.

12. The structure of claim 7 wherein the insulated gate transistor formed in the second mesa-like structure includes a drain region in common with the drain region formed in said first mesa-like structure and the gate electrodes of each insulated gate transistor is in contact with each other while the source regions of each are coupled together via the base region of the vertical transistor.

13. A merged vertical transistor and insulated gate transistor device comprising:

(a) first mesa-like semiconductor structure formed over a substrate and laterally and electrically vertically isolated therefrom;

said structure having a top surface extending in a plane with sidewalls extending outwardly and downwardly from a central line passing orthogonally through the plane to intersect with said substrate;

(b) a semiconductor p/n junction extending to said sidewalls in a plane parallel with said top surface;

(c) a vertical transistor formed in said structure comprising;

(i) a collector region at the bottom of said structure;

(ii) a base region over said collector region forming said p/n junction with said collector region;

(iii) and an emitter region in said base region; and

(d) a first transistor formed in and along one of said sidewalls comprising;

(i) a gate insulator extending along said sidewall and over said base region;

(ii) a gate electrode over said insulator;

(iii) a source region formed in said base region; and

(iv) a drain region formed in said collector region.

14. The device of claim 13 including metal contacts formed on said source, emitter and drain regions and on said gate electrode.

15. The device of claim 13 wherein the mesa-like structure is formed of silicon, the collector region is formed of n-type doped silicon, the base region is formed of p-type doped silicon, the emitter region is formed of n-type doped silicon and the gate electrode is formed of polysilicon.

16. The device of claim 13 wherein a base contact is formed in the base region in contact with said source region.

17. The device of claim 16 wherein the source region is in contact with said sidewall.

18. The device of claim 13 further including a second mesa-like semiconductor structure with sidewalls formed on said substrate adjacent said first structure with a second transistor formed along a sidewall thereof.

19. The device of claim 18 wherein the second transistor has a gate electrode which extends to the gate electrode of the first transistor.

22. The device of claim 13 having a separate emitter electrode formed on said emitter region.

20. A merged vertical transistor and insulated gate transistor device comprising:

(a) a first mesa-like semiconductor structure formed over a substrate and laterally and vertically electrically isolated therefrom;

said structure having a top surface extending in a plane with sidewalls extending outwardly and downwardly from a central line passing orthogonal through the plane to intersect with said substrate;

(b) a semiconductor p/n junction extending to said sidewalls in a plane parallel with said top surface;

(c) a vertical transistor formed in said structure comprising;

(i) a collector region at the bottom of said structure;

(ii) a base region over said collector region forming said p/n junction with said collector region;

(iii) and an emitter region in said base region; and

(d) a first transistor formed in and along one of said sidewalls comprising;

(i) a gate insulator extending along said sidewall;

(ii) a gate electrode over said insulator;

(iii) a source region formed in said base region and extending laterally up to, but not underlying, said gate insulator; and

(iv) a drain region formed in said base region.

21. The device of claim 20 having a separate emitter electrode formed on said emitter region.