Photoelectron image projection apparatus

• US 5,029,222 A
• Filed: 08/30/1988
• Issued: 07/02/1991
• Est. Priority Date: 09/02/1987
• Status: Expired due to Fees

• Current Assignee: Fujitsu Limited
• Original Assignee: Fujitsu Limited
• Inventors: Yamada, Akio, Yasuda, Hiroshi, Sakamoto, Kiichi, Kudou, Jinko
• Primary Examiner(s): Boudreau, Leo H.
• Assistant Examiner(s): Santos, Dan
• Application Number:
  US07/238,047
• Time in Patent Office: 1,036 Days
• Field of Search: 382/8, 356/237, 358/106, 250/363.01
• US Class Current: 382/144
• CPC Class Codes: G03F 7/26 Processing photosensitive materials; Apparatus therefor G03F7/12 - G03F7/24 take precedence
• CPC Class Codes: G03F 9/00 Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically G03F7/22 takes precedence; preparation of photographic masks G03F1/00; within photographic printing apparatus for making copies G03B27/00
• CPC Class Codes: H01J 2237/2817 Pattern inspection
• CPC Class Codes: H01J 2237/31779 from patterned photocathode
• CPC Class Codes: H01J 2237/31794 affecting masks
• CPC Class Codes: H01J 37/30 Electron-beam or ion-beam tubes for localised treatment of objects
• CPC Class Codes: H01L 21/32 using masks

Abstract

A photoelectron image projection apparatus has a device for detecting an image of a pattern of a mask within a predetermined projection region of the mask. An image signal describing the detected image is compared with a reference image signal which is known from the pattern of the mask, and a defect in the projection pattern is detected when the two compared image signals differ.

Claims

1. A photoelectron beam image projection apparatus for detecting defects in a pattern, to be projected as a photoelectron beam image onto a wafer, relative to a desired pattern, the pattern to be projected being defined by a mask having a photoelectric layer thereon and the photoelectron beam image of the pattern being formed by selective irradiation of the photoelectric layer through the mask pattern and the corresponding release of photoelectrons from the selectively irradiated photoelectric layer, comprising:

a projection chamber;

means for holding the mask within said projection chamber;

means for emitting a light beam;

means for directing said light beam selectively onto each of plural, predetermined regions of the mask pattern, thereby to selectively irradiate respectively corresponding, plural regions of said photoelectric layer as defined by said mask pattern;

means for forming the photoelectrons released from each said selectively irradiated region of the photoelectric layer into a corresponding photoelectron beam and for projecting each said corresponding photoelectron beam so as to form a respectively corresponding photoelectron beam pattern region image on a predetermined image plane within said projection chamber;

image detector means positionable at said image plane for being irradiated by and detecting each said projected photoelectron beam pattern region image and producing a corresponding, detected pattern region image output signal;

movable stage means, disposed within said projection chamber, for holding and selectively positioning said wafer and said detector means within said projection chamber, said movable stage means being selectively movable to a first position at which said detector means is positioned at said image plane for being irradiated by each said projected photoelectron beam pattern region image and to a second position at which said wafer is positioned at said image plane for being irradiated by each said projected photoelectron beam pattern region image; and

defect detector means for providing reference pattern region image signals for respectively corresponding, plural and predetermined regions of said desired pattern and for comparing each said detected pattern image region output signal of said image detector means with the respective reference pattern region image signal and producing a defect indication output signal when said compared signals differ.

2. A photoelectron beam image projection apparatus as claimed in claim 1 wherein:

said light beam source means comprises a single light beam source used in common at each of said first and second positions of said movable stage means and correspondingly with respect to forming and projecting the photoelectron beam pattern region images onto each of said detector means and said wafer, respectively.

3. A photoelectron beam image projection apparatus as claimed in claim 1 in which each said predetermined region of the mask pattern corresponds to an individual semiconductor chip and said plurality of regions respectively correspond to a plurality of individual semiconductor chips, said holder means being selectively movable, in association with said first position of said movable stage means, for selectively and individually irradiating each of said plurality of regions of the mask pattern so that a defect can be detected by said detector means for each of said plurality of regions of the mask pattern.

4. A photoelectron beam image projection apparatus as claimed in claim 1, further comprising a deposition chamber connected to said projection chamber, said deposition chamber having means for depositing said photoelectric layer onto said mask.

5. A photoelectron beam image projection apparatus as claimed in claim 1 in which each said predetermined region of the mask corresponds to a portion of one semiconductor chip and wherein the composite of said plurality of predetermined regions defines a single semiconductor.

6. A photoelectron beam image projection apparatus as claimed in claim 5 wherein said holder means is selectively movable at said second position of said movable stage means for selectively irradiating said plurality of regions of the mask pattern, in succession, onto corresponding portions of said wafer, the composite of the plurality of said projected pattern region images corresponding to the projection onto said wafer of said pattern of said single semiconductor chip.

7. A photoelectron beam image projection apparatus as claimed in claim 4, further comprising a pattern detection chamber connected to said projection chamber, said movable stage means moving said electron beam detector means to said first position inside said pattern detection chamber.

8. A photoelectron beam image projection apparatus as claimed in claim 7, wherein said pattern detection chamber is positioned between said projection chamber and said deposition chamber.