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Method of forming a contact hole in semiconductor integrated circuit

  • US 5,032,528 A
  • Filed: 06/15/1990
  • Issued: 07/16/1991
  • Est. Priority Date: 08/10/1989
  • Status: Expired due to Term
First Claim
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1. A method of forming a contact hole comprising the steps of:

  • selectively forming an injection blocking film for blocking impurity injection, on a semiconductor substrate of a first conductivity type;

    forming an impurity region by injecting impurity ions of a second conductivity type into the semiconductor substrate using the injection blocking film as a mask;

    removing the injection blocking film;

    forming an oxide film by oxidizing the semiconductor substrate;

    forming a contact hole by removing at least a portion of the oxide film on the region of the semiconductor substrate other than the impurity region;

    ion-injecting impurities of the second conductivity type into a surface region of the semiconductor substrate which is formed below a bottom of the contact hole; and

    forming a conductive film which fills the contact hole.

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