Semiconductor pin device with interlayer or dopant gradient

• US 5,032,884 A
• Filed: 02/07/1990
• Issued: 07/16/1991
• Est. Priority Date: 11/05/1985
• Status: Expired due to Term

• Current Assignee: Kanegafuchi Kagaku Kogyo Kabushiki Kaisha
• Original Assignee: Kanegafuchi Kagaku Kogyo Kabushiki Kaisha
• Inventors: Nishimura, Kunio, Asaoka, Keizou, Tsuge, Kazunori, Yamagishi, Hideo, Hiroe, Akihiko, Kondo, Masataka, Yamaguchi, Minori, Tawada, Yoshihisa
• Primary Examiner(s): Mintel, William
• Application Number:
  US07/477,138
• Time in Patent Office: 524 Days
• Field of Search: 357/58, 357/2, 357/90, 357/30 F, 357/30 J, 357/30 K, 357/30 L, 357/30 P, 357/30 B, 136/249, 136/258
• US Class Current: 257/458
• CPC Class Codes: H01L 31/075 the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
• CPC Class Codes: H01L 31/202 including only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 31/204 including AIVBIV alloys, e.g. SiGe, SiC
• CPC Class Codes: Y02E 10/548 Amorphous silicon PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

A semiconductor device comprising a pin-type or nip-type amorphous-containing semiconductor layers; characterized in that (1) at least one interlayer made of semiconductor or insulator having higher electrical resistivity than a semiconductor which adjoins the interlayer is/are interposed between semiconductor layers or between a semiconductor and an electrode, (2) an amount of dopant in a p-type or n-type layer is least at a junction interface of p/i or n/i and increases gradually toward a junction interface of p/electrode or n/electrode, or (3) a p-type semiconductor layer being the same conductive type as the p-type semiconductor and having higher impurity density and/or an n-type semiconductor layer being the same conductive type as the n-type semiconductor layer and having higher impurity density is/are interposed between the p-type semiconductor layer and the electrode at the side of the p-type semiconductor layer and/or between the n-type semiconductor layer and the electrode at the side of the n-type semiconductor layer. According to the semiconductor device of the present invention (in the case of (1) or (2)), large Voc and electric current at a specific voltage can be obtained, further in the case of (3), photoelectric conversion efficiency can be improved.

Claims

1. A semiconductor device comprising at least one set of semiconductor layers, said set having a p-i-n structure wherein

(1) p represents a p-type semiconductor layer which is an at least partially amorphous material doped with a p-type dopant,

(2) i represents an intrinsic semiconductor layer which is an at least partially amorphous semiconductor material, and

(3) n represents an n-type semiconductor layer which is an at least partially amorphous semiconductor material doped with an n-type dopant,

said semiconductor device further comprising at least one electrode provided on the outer surface of the outermost p-type semiconductor layer and at least one electrode provided on the outer surface of the outermost n-type semiconductor layer,

wherein at least one interlayer is interposed at at least one interface between two semiconductor layers of said p-i-n structure, said interlayer being selected from the group consisting of Si_1-x C_x :

X;

Y, Si_1-x N_x ;

X;

Y and Si_1-x O_x ;

X;

Y, wherein x satisfies the relationship 0<

x<

1, X is selected from the group consisting of H, Cl, F and Br; and

Y is selected from the group consisting of H, Cl, F and Br.

2. The device of claim 1, wherein the interlayer is Si_1-x C_x :

H, wherein x satisfies the relationship 0<

x<

1.

3. The device of claim 1, wherein the thickness of the interlayer is 10 to 500 Å

.

4. The device of claim 2, wherein the thickness of the interlayer is 10 to 500 Å

.

5. A semiconductor device comprising at least one set of semiconductor layers, said set having a p-i-n structure wherein

(1) p represents a p-type semiconductor layer which is an at least partially amorphous material doped with a p-type dopant,

(2) i represents an intrinsic semiconductor layer which is an at least partially amorphous semiconductor material, and

(3) n represents an n-type semiconductor layer which is an at least partially amorphous semiconductor material doped with an n-type dopant,

said semiconductor device further comprising at least one electrode provided on the outer surface of the outermost p-type semiconductor layer and at least one electrode provided on the outer surface of the outermost n-type semiconductor layer,

wherein at least one doped semiconductor layer selected from the group consisting of said p-type semiconductor layer and said n-type semiconductor layer has a dopant gradient in the region extending from the interface with the intrinsic layer to a depth which is less than the entire thickness of said doped semiconductor layer, said dopant gradient being such that the dopant concentration in said region continuously increases away from the interface with the intrinsic layer from zero to the maximum dopant concentration in said doped semiconductor layer.

6. The device of claim 5, wherein at least one of the p-type and n-type semiconductor layers is a layer of a-SiC:

H.

7. The device of claim 5, wherein at least one of the p-type and n-type semiconductor layers is a layer of a-Si:

H.

8. The device of claim 5, wherein the depth of said region having a dopant gradient is at least 20 Å

.

9. The device of claim 5, wherein the depth of said region having a dopant gradient is at least 100 Å

.

10. The device of claim 5, wherein the dopant in the p-type semiconductor layer is an element selected from the group consisting of B, Al, Ga, In and Tl.

11. The device of claim 6, wherein the dopant in the p-type semiconductor layer is an element selected from the group consisting of B, Al, Ga, In and Tl.

12. The device of claim 7, wherein the dopant in the p-type semiconductor layer is an element selected from the group consisting of B, Al, Ga, In and Tl.

13. The device of claim 5, wherein the dopant in the n-type semiconductor layer is an element selected from the group consisting of N, P, As, Sb, Te and Po.

14. The device of claim 6, wherein the dopant in the n-type semiconductor layer is an element selected from the group consisting of N, P, As, Sb, Te and Po.

15. The device of claim 7, wherein the dopant in the n-type semiconductor layer is an element selected from the group consisting of N, P, As, Sb, Te and Po.

16. A semiconductor device comprising at least one set of semiconductor layers, said set having a p-i-n structure consisting of:

(1) a p-type semiconductor layer which is an at least partially amorphous material doped with a p-type dopant,

(2) an intrinsic semiconductor layer which is an at least partially amorphous semiconductor material, and

(3) an n-type semiconductor layer which is an at least partially amorphous semiconductor material doped with an n-type dopant,

wherein p represents said p-type semiconductor layer, i represents said intrinsic semiconductor layer, and n represents said n-type semiconductor layer,

said semiconductor device further comprising at least one electrode provided on the outer surface of the outermost p-type semiconductor layer and at least one electrode provided on the outer surface of the outermost n-type semiconductor layer,

wherein a highly doped semiconductor layer is interposed at at least one interface between an electrode and an adjacent doped semiconductor layer of said p-i-n structure, said highly doped semiconductor layer having the same type of conductivity as said adjacent doped semiconductor layer and having a dopant concentration which is at least twice the dopant concentration of said adjacent doped semiconductor layer.

17. The device of claim 16, wherein the conductivity of at least one said highly doped semiconductor layer is of the p-type.

18. The device of claim 16, wherein the conductivity of at least one said highly doped semiconductor layer is of the n-type.

19. The device of claim 16, wherein the conductivity of at least one said highly doped semiconductor layer is of the p-type, and the conductivity of at least another said highly doped semiconductor layer is of the n-type.

20. The device of claim 16, wherein the thickness of said highly doped semiconductor layer is 10 to 300 Å

.

21. The device of claim 16, wherein the dopant concentration of said highly doped semiconductor layer is at least four times the dopant concentration of said adjacent doped semiconductor layer.