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Manufacturing ultra-thin wafer using a handle wafer

  • US 5,034,343 A
  • Filed: 03/08/1990
  • Issued: 07/23/1991
  • Est. Priority Date: 03/08/1990
  • Status: Expired due to Term
First Claim
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1. A method of fabricating integrated circuits in ultra thin wafers comprising:

  • bonding a first device wafer to a handle wafer by an intermediate oxide layer and thinning said first device wafer to a desired wafer thickness of not greater than 7 mils;

    performing device formation steps on a first surface of said thinned first device wafer; and

    removing said handle wafer to produce a wafer having substantially the thickness of said first device wafer.

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