High efficiency charge pump circuit

• US 5,038,325 A
• Filed: 03/26/1990
• Issued: 08/06/1991
• Est. Priority Date: 03/26/1990
• Status: Expired due to Term

• Current Assignee: Round Rock Research LLC
• Original Assignee: Micron Technology, Inc.
• Inventors: Chern, Wen-Foo, Douglas, Kurt P.
• Primary Examiner(s): Bowler, Alyssa H.
• Application Number:
  US07/487,773
• Time in Patent Office: 498 Days
• Field of Search: 365/189.06, 365/189.09, 365/189.11, 365/203, 365/204, 365/226, 307/578, 307/482
• US Class Current: 365/189.06
• CPC Class Codes: G11C 11/4074 Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
• CPC Class Codes: G11C 5/145 Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor G11C5/141 takes precedence
• CPC Class Codes: H02M 3/07 using capacitors charged and discharged alternately by semiconductor devices with control electrode , e.g. charge pumps

Abstract

An integrated circuit includes a charge pump to provide current at a potential which is greater than a supply potential. An oscillator provides an output to a pair of capacitors. Each capacitor is bypassed respectively by one of a pair of clamp circuits. An output transistor is gated by one of the clamp circuits to maintain a continuous output at an elevated potential, while reducing power loss caused by impedances within the charge pump circuit. By using the charge pump as a source of elevated potential, the circuit layout of the DRAM array is simplified and the potential boosting circuitry can be locataed outside of the array, on the periphery of the integrated circuit. When used with an integrated circuit device, such as a DRAM, the current from the charge pump may be supplied to nodes on isolation devices and nodes on word lines, thereby improving the performance of the DRAM without substantially changing the circuit configuration of the DRAM array.

Claims

1. In a semiconductor circuit device having a signal generating source, at least one signal line which is precharged to operating levels, a signal level voltage source providing current at a signal level potential, a circuit connected to the signal line which accepts an elevated potential above a potential of the signal level voltage source, and a precharge circuit which precharges the signal line, the precharge circuit comprising:

(a) an oscillator receiving current from the signal level voltage source and providing an oscillating output;

(b) a capacitor connected between the oscillator and a first node;

(c) a first switching circuit connected in parallel with the capacitor and providing a timed output in response to the oscillating output;

(d) a second switching circuit connected in series with said capacitor, between said capacitor at the first node and an output node;

(e) a third switching circuit controlling the second switching circuit in a timed sequence with respect to said timed output; and

a decoupling capacitor connected to the output node, the decoupling capacitor providing a storage capacity sufficient to maintain said elevated potential at a potential above the signal level potential during a substantial portion of an operating cycle of the semiconductor circuit device.

2. The semiconductor device as described in claim 1, further comprising:

(a) the first switching circuit including an output transistor having a source and drain connection in said series connection between the first node and the output node; and

(b) a third switching circuit, the third switching circuit controlling the second switching circuit by gating the output transistor.

3. The semiconductor device as described in claim 1, further comprising:

a second capacitor connected in parallel with the third switching circuit.

4. The semiconductor device as described in claim 1, further comprising:

a potential maintenance transistor connected to conduct from the signal level voltage source at times when potential at the output node falls below a predetermined potential with respect to the potential of the output node and to present an open circuit when potential at the output node is greater than the potential of the signal level voltage source.

5. The semiconductor device as described in claim 4, further comprising:

the potential maintenance transistor having a source and drain connection in a series connection between the signal level voltage source and the output node, and the potential maintenance transistor being connected with its gate to the signal level voltage source

6. The semiconductor device as described in claim 1, further comprising:

(a) means to maintain the output node at a predetermined minimum potential by conducting current from the signal level voltage source; and

(b) a potential limiting circuit responsive to potential at the output node, the potential limiting circuit attenuating the output of the precharge circuit to limit the potential at the output node.

7. In a semiconductor circuit device having a signal generating source, at least open signal line which is precharged to operating levels, a signal level voltage source providing current at a signal level potential, a circuit connected to the signal line which accepts an elevated potential above a potential of the signal level voltage source, and a precharge circuit which precharges the signal line, the precharge circuit comprising:

(a) an oscillator receiving current from the signal level voltage source and providing an oscillating output;

(b) a first capacitor connected between the oscillator and a first node;

(c) an output switching circuit connected in series with the first capacitor, between the first capacitor at the first node and an output node, the output switching circuit including an output transistor having a source and drain connection in said series connection between the first node and the output node;

(d) a first clamp circuit connected in parallel with the first capacitor and providing a timed output in response to the oscillating output; and

(e) a second clamp circuit controlling the output switching circuit in a timed sequence with respect to said timed output, the second clamp circuit controlling the output switching circuit by gating the output transistor.

8. The semiconductor device as described in claim 7, further comprising:

a second capacitor connected in parallel with the second clamp circuit.

9. In a dynamic random access memory array, which includes an array of capacitor cells corresponding to memory address locations, at least one signal line which is precharged to signal sensing levels, a circuit for providing signals corresponding to signal levels in the capacitor cells to the signal line, a precharge circuit which precharges the signal line, an equalization transistor for equalization of the precharge signal levels across the signal line, a signal level voltage source, the circuit device comprising:

(a) an oscillator receiving current from the signal level voltage source and providing an oscillating output;

(b) a capacitor connected between the oscillator and a first node;

(c) an output switching circuit connected in series with said capacitor, between said capacitor at the first node and an output node, the output switching circuit including an output transistor having a source and drain connection in said series connection between the first node and the output node;

(d) a first clamp circuit connected in parallel with said capacitor and providing a timed output in response to the oscillating output; and

(e) a second clamp circuit controlling the output switching circuit in a timed sequence with respect to said timed output, the second clamp circuit controlling the output switching circuit by gating the output transistor.

10. The dynamic random access memory array described in claim 9, further comprising:

a second capacitor connected in parallel with the second clamp circuit.

11. In a random access memory array, which includes an array of capacitor cells corresponding to memory address locations, at least one signal line which is precharged to signal sensing levels, a circuit for providing signals corresponding to signal levels in the capacitor cells to the signal line, a precharge circuit which precharges the signal line, an equalization transistor for equalization of the precharge signal levels across the signal lines, a signal level voltage source, the circuit device comprising:

(a) the precharge circuit including a ring oscillator providing an elevated potential output at an output node, whereby isolation devices on the memory array and word lines are supplied with current by the precharge circuit; and

means to maintain the output node at a predetermined minimum potential by conducting current from the signal level voltage source, said means including a potential maintenance transistor connected to conduct from the signal level voltage source at times when potential at the output node falls below a predetermined potential with respect to the potential of the output node and to present an open circuit when potential at the output node is greater than the potential of the signal level voltage source, the potential maintenance transistor having a source and drain connection in a series connection between the signal level voltage source and the output node, and the potential maintenance transistor being connected with its gate to the signal level voltage source.

12. The random access memory array described in claim 11, further comprising:

a potential limiting circuit responsive to potential at an output node, the potential limiting circuit attenuating the output of the precharge circuit to limit the potential at the output node.

13. The random access memory array described in claim 11, further comprising:

a potential limiting circuit responsive to potential at an output node, the potential limiting circuit attenuating the output of the precharge circuit to limit the potential at the output node.