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Method of producing a quasi-flat semiconductor device capable of a multi-wavelength laser effect and the corresponding device

  • US 5,039,627 A
  • Filed: 01/17/1990
  • Issued: 08/13/1991
  • Est. Priority Date: 01/20/1989
  • Status: Expired due to Fees
First Claim
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1. A method of producing a semiconductor device, in particular a device capable of a laser effect, comprising the steps of:

  • a) forming a substrate in stair-step configuration having elongated treads which are parallel with one another and separated from one another by transitions;

    b) disposing on said substrate a mono-crystalline double heterostructure stack comprising alternating confinement layers and active layers, wherein said active layers have compositions different from one another, each said confinement and active layer being assigned a numerical rank in order of said disposing on said substrate, all said layers having the same type of conductivity, producing thereby parallel stages parallel with said treads;

    c) levelling said stack to obtain a block having a substantially flat free upper surface;

    d) forming a substantially flat upper layer on at least a part of said substantially flat free upper surface of said stack;

    e) introducing impurities of a conductivity opposite to that of the confinement layers through said substantially flat upper layer which has the same type of conductivity as said impurities or a low but opposite conductivity, into the stack of said block, said impurities forming parallel and elongated strips and producing P-N junctions within the stack which are electrically and individually operable and insulated from one another, the P-N junctions of at least two adjacent strips being formed in the vicinity of active layers of different rank and composition; and

    f) optically preparing the small opposite ends of said strips.

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