Method of producing a quasi-flat semiconductor device capable of a multi-wavelength laser effect and the corresponding device
First Claim
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1. A method of producing a semiconductor device, in particular a device capable of a laser effect, comprising the steps of:
- a) forming a substrate in stair-step configuration having elongated treads which are parallel with one another and separated from one another by transitions;
b) disposing on said substrate a mono-crystalline double heterostructure stack comprising alternating confinement layers and active layers, wherein said active layers have compositions different from one another, each said confinement and active layer being assigned a numerical rank in order of said disposing on said substrate, all said layers having the same type of conductivity, producing thereby parallel stages parallel with said treads;
c) levelling said stack to obtain a block having a substantially flat free upper surface;
d) forming a substantially flat upper layer on at least a part of said substantially flat free upper surface of said stack;
e) introducing impurities of a conductivity opposite to that of the confinement layers through said substantially flat upper layer which has the same type of conductivity as said impurities or a low but opposite conductivity, into the stack of said block, said impurities forming parallel and elongated strips and producing P-N junctions within the stack which are electrically and individually operable and insulated from one another, the P-N junctions of at least two adjacent strips being formed in the vicinity of active layers of different rank and composition; and
f) optically preparing the small opposite ends of said strips.
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Abstract
A method of producing a quasi-flat semiconductor device capable of a multi-wavelength laser effect and the device thus produced.
On the basis of a double heterostructure stack supported by a substrate comprising steps, following levelling of the stack and diffusion through a flat surface, a semiconductor device is obtained which is capable of a multi-wavelength laser effect, of which the different junctions are situated in a plane parallel with the base of the substrate.
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Citations
52 Claims
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1. A method of producing a semiconductor device, in particular a device capable of a laser effect, comprising the steps of:
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a) forming a substrate in stair-step configuration having elongated treads which are parallel with one another and separated from one another by transitions; b) disposing on said substrate a mono-crystalline double heterostructure stack comprising alternating confinement layers and active layers, wherein said active layers have compositions different from one another, each said confinement and active layer being assigned a numerical rank in order of said disposing on said substrate, all said layers having the same type of conductivity, producing thereby parallel stages parallel with said treads; c) levelling said stack to obtain a block having a substantially flat free upper surface; d) forming a substantially flat upper layer on at least a part of said substantially flat free upper surface of said stack; e) introducing impurities of a conductivity opposite to that of the confinement layers through said substantially flat upper layer which has the same type of conductivity as said impurities or a low but opposite conductivity, into the stack of said block, said impurities forming parallel and elongated strips and producing P-N junctions within the stack which are electrically and individually operable and insulated from one another, the P-N junctions of at least two adjacent strips being formed in the vicinity of active layers of different rank and composition; and f) optically preparing the small opposite ends of said strips. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27)
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28. A method of producing a semiconductor device, in particular a device capable of a laser effect, comprising the steps of:
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a) forming a substantially flat substrate and disposing thereon a mono-crystalline double heterostructure stack comprising alternate confinement layers and active layers, wherein said active layers have compositions different from one another, each said confinement and active layer being assigned a numerical rank in order of said disposing on said substrate, all said layers having the same type of conductivity, said stack having a substantially flat free upper surface; b) forming a substantially flat upper layer on at least a part of said substantially flat free upper surface of said stack; c) introducing impurities of a type of conductivity opposite to that of the confinement layers through said substantially flat upper layer which has the same type of conductivity as said impurities or a low but opposite conductivity, into the stack of said block, said impurities forming parallel and elongated strips and producing P-N junctions within the stack which are electrically and individually operable and insulated from one another, the P-N junctions of at least two adjacent strips being formed in the vicinity of active layers of different rack and composition; and d) optically preparing the small opposite ends of said strips. - View Dependent Claims (29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52)
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Specification