Self-aligned, high resolution resonant dielectric lithography
First Claim
1. An optical system, comprising:
- a mask at least partially opaque to optical radiation of a predetermined frequency;
a layer of photoimageable material spaced from said mask;
an intermediate material positioned between said mask and said layer of photoimageable material, said intermediate material having a resonant dielectric increase characteristic which peaks at about the frequency of said optical radiation; and
means directing optical radiation at said predetermined frequency through said mask and through said intermediate layer to expose said photoimageable material, said resonant dielectric increase substantially reducing the effective wavelength of said optical radiation to provide a high resolution image of said mask in said photoimageable material.
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Accused Products
Abstract
Methods of fabricating electrical contacts on both sides of a thin membrane to form a millimeter wave, self-aligned, opposed gate-source transistor are disclosed. The transistor structure has a subhalf-micron gate, dual-drains placed symmetrically around both sides of the gate, and a source approximately half the length of the gate. The source is directly opposite, and centered under, the gate on the opposite surface of a semiconductor thin film. The gate electrode is fabricated on the first surface of the thin film using conventional single surface lithography, and is used as a conformed mask for the source lithography, thereby self-aligning the source to the gate. The source is formed by resonant dielectric lithography, wherein the gate side of the thin film is irradiated by collimated ultraviolet light to expose a negative resist on the source side with a resolution of less than a wavelength. Lateral diffraction effects affect the relative dimension of the source with respect to the gate. The electron-beam lithographic process utilizes electron scattering in the thin film for the same purpose. This new untraviolet lithography process avoids the need to handle the thin film until after source metallization has been completed.
727 Citations
7 Claims
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1. An optical system, comprising:
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a mask at least partially opaque to optical radiation of a predetermined frequency; a layer of photoimageable material spaced from said mask; an intermediate material positioned between said mask and said layer of photoimageable material, said intermediate material having a resonant dielectric increase characteristic which peaks at about the frequency of said optical radiation; and means directing optical radiation at said predetermined frequency through said mask and through said intermediate layer to expose said photoimageable material, said resonant dielectric increase substantially reducing the effective wavelength of said optical radiation to provide a high resolution image of said mask in said photoimageable material. - View Dependent Claims (2, 3, 4, 5, 6)
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7. An optical system, comprising:
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an object to be viewed; an objective lens spaced from said object; means of directing monochromatic light of a predetermined frequency onto said object; and an intermediate material positioned between said object and said objective lens, said intermediate material having a resonant dielectric increase characteristic which peaks at about the frequency of said monochromatic light, whereby light from said object passes through said intermediate material to said objective lens.
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Specification