Compound semiconductor device and method for surface treatment

• US 5,040,044 A
• Filed: 06/20/1990
• Issued: 08/13/1991
• Est. Priority Date: 06/21/1989
• Status: Expired due to Fees

• Current Assignee: Mitsubishi Kasei Corp. (Mitsubishi Chemical Group Corp.)
• Original Assignee: Mitsubishi Kasei Corp. (Mitsubishi Chemical Group Corp.), Mitsubishi Monsanto Chemical Company
• Inventors: Noguchi, Masahiro, Ibuka, Toshihiko
• Primary Examiner(s): WOJCIECHOWICZ, EDWARD JOSEPH
• Application Number:
  US07/546,813
• Time in Patent Office: 419 Days
• Field of Search: 357/52, 357/55, 357/72, 357/17, 427/50, 427/51, 437/235, 437/241, 437/243
• US Class Current: 257/103
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/02266 deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
• CPC Class Codes: H01L 21/02271 deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition H01L21/02266 takes precedence
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/3185 of siliconnitrides
• CPC Class Codes: H01L 33/0062 for devices with an active region comprising only III-V compounds
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

According to the present invention, roughness are formed on the surface of III-V group compound semiconductor to prevent total reflection, and SiNx film is formed on rough surface. This makes it possible to increase external quantum efficiency by surface roughness. Further, bond strength is increased because SiNx film is furnished on the roughness. As the result, the detachment of SiNx film is prevented, moisture resistant property is improved, and service life of LED is extended by preventing oxidation.

Claims

1. A compound semiconductor device, comprising:

back and front electrodes;

a p-active layer;

p-clad and n-clad layers sandwiching said p-active layer, all peripheral surfaces of said p-active layer and said p-clad and n-clad layers, except for the attachment of the p-clad layer to the back electrode, having irregular surfaces;

a film coating each of said irregular surfaces, said film being composed of an SiNx compound, said SiNx compound being selected from any one of those SiNx compounds having refractive index in a range from 1.8 to 2.0, said film improving luminant output from a front surface of said n-clad layer and protecting said irregular surfaces by preventing oxidation thereof.

2. A compound semiconductor device according to claim 1, wherein III-V group compound semiconductor is AlGaAs semiconductor having mixed crystal ratio of 0<

AlAs<

1.

3. A compound semiconductor device according to claim 2, wherein SiNx film has thickness of 20 to 500 nm.

4. A compound semiconductor device according to claim 2, wherein the film thickness of SiNx film is odd-fold multiple of λ

/4n (λ

is wavelength of emission light, and n is refractive index of SiNx film).

5. A compound semiconductor device according to claim 2, wherein SiNx film is formed by plasma CVD method.

6. A surface treatment method of a Group III-V compound semiconductor, comprising the steps of:

forming roughness on a surface of the semiconductor by one of a physical method and chemical method, and

forming an SiNx film on the roughened said surface by one of a reduced pressure continuous vapor deposition, a plasma continuous vapor deposition, and a sputtering method;

said SiNx compound being selected from any one of those SiNx compounds having a refractive index in a range from 1.8 to 2.0.

7. A surface treatment method according to claim 6, wherein III-V group compound semiconductor is AlGaAs semiconductor having mixed crystal ratio of 0<

AlAs<

1.