Semiconductor laser

• US 5,040,188 A
• Filed: 04/16/1990
• Issued: 08/13/1991
• Est. Priority Date: 05/12/1989
• Status: Expired due to Fees

• Current Assignee: Alcatel NV (Nokia Corporation)
• Original Assignee: Alcatel NV (Nokia Corporation)
• Inventors: Lang, Robert, Mozer, Albrecht
• Primary Examiner(s): EPPS, GEORGIA Y
• Application Number:
  US07/508,722
• Time in Patent Office: 484 Days
• Field of Search: 372/96, 372/45
• US Class Current: 372/96
• CPC Class Codes: H01S 5/06209 in single-section lasers H01S5/0608 takes precedence
• CPC Class Codes: H01S 5/0622 Controlling the frequency of the radiation
• CPC Class Codes: H01S 5/06258 with DFB-structure
• CPC Class Codes: H01S 5/12 the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers comprising a photonic bandgap structure H01S5/11; surface-emitting lasers H01S5/18
• CPC Class Codes: H01S 5/1212 Chirped grating
• CPC Class Codes: H01S 5/1215 Multiplicity of periods

Abstract

A switchable DFB (distributed feedback) laser which includes a waveguide layer having an impressed diffraction grating composed of two or more superposed subgratings having different respective grating constants. The diffraction grating is either frequency modulated (FIG. 3a) or amplitude modulated (FIG. 3b) or is a mixed form of these two types of modulation. Each subgrating can be employed to generate an emission wavelength that is a function of the grating period. By changing the temperature or changing the injection current, the effective index of refraction of the laser is changed, thus enabling the setting of an emission wavelength which is a function of the modulated diffraction grating. The switchable DFB laser according to the present invention may be employed for optical data transmission and particularly in narrowband wavelength multiplex operation.

Claims

1. In a monomode semiconductor laser having a multilayer structure disposed between first and second electrodes for an injection current and wherein an interface between a waveguide layer and an adjacent layer is configured as a diffraction grating, the improvement wherein the diffraction grating is composed of at least two different superposed subgratings which each have a different grating constant and which each extend over the entire region of said interface disposed between said first and second electrodes, whereby said laser is switchable between at least two different emission wavelengths.

2. A semiconductor laser as defined in claim 1, wherein the subgratings are superposed in an amplitude modulated manner.

3. A semiconductor laser as defined in claim 1, wherein the subgratings are superposed in a frequency modulated manner.

4. A semiconductor laser as defined in claim 1, wherein the subgratings are superposed in a frequency and amplitude modulated manner.

5. A semiconductor laser as defined in claim 1, wherein said emission wavelength is switchable by varying the injection current between said first and second electrodes.

6. A semiconductor laser as defined in claim 1, wherein:

said first and second electrodes are disposed on opposing sides of a first portion of said multilayer structure of the semiconductor laser;

a third electrode for a control current is disposed adjacent said first electrode on a second portion of said multilayer structure of the semiconductor laser;

said second electrode extends over said second portion of said multilayer structure; and

, a region of said interface disposed in the second portion of the semiconductor laser is free of said subgratings and acts as a control region for said laser.

7. A semiconductor laser as defined in claim 6, wherein said emission wavelength is switchable by injecting a control current into the control region via said third electrode.

8. A semiconductor laser as defined in claim 1, wherein the laser is coupled with a heat exchanger.

9. A semiconductor laser as defined in claim 1, wherein said emission wavelength is switchable by varying the temperature of the laser.

10. A semiconductor laser as defined in claim 1, wherein optical exit surfaces of said laser are provided with a reflective coating.

11. A semiconductor laser as defined in claim 1 wherein said laser is a distributed feedback laser.

12. A semiconductor laser as defined in claim 1 wherein each of said subgratings is associated with a different emission wavelength of said laser.