High temperature superconductor detector fabrication process

• US 5,041,188 A
• Filed: 06/12/1990
• Issued: 08/20/1991
• Est. Priority Date: 03/02/1989
• Status: Expired due to Fees

• Current Assignee: Santa Barbara Research Center
• Original Assignee: Santa Barbara Research Center
• Inventors: Ray, Michael, Wilson, Jerry A., Myrosznyk, James M.
• Primary Examiner(s): Powell, William A.
• Application Number:
  US07/537,200
• Time in Patent Office: 434 Days
• Field of Search: 156/634, 156/643, 156/650, 156/656, 156/659.1, 156/661.1, 156/651, 156/664, 156/667, 156/668, 427/62, 427/63, 204/192.24, 204/192.34, 204/192.35, 204/192.36, 505/816, 505/728, 505/817, 505/820, 29/599
• US Class Current: 216/3
• CPC Class Codes: C23F 4/00 Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
• CPC Class Codes: H10N 60/0661 Processes performed after copper oxide formation, e.g. patterning
• CPC Class Codes: Y10S 505/728 Etching
• CPC Class Codes: Y10S 505/82 And etching

Abstract

A high temperature superconductor (HTS) fabrication process employs a two level metal deposition sequence for depositing a layer of metal (14, 18) over HTS material (12) to protect the HTS material from subsequent, possibly deleterious, processing steps. The process of the invention provides a capability for both patterning a HTS film material and electrically contacting the film using conventional photolithographic processes. The process of the invention furthermore accomplishes these objectives without degrading the superconducting properties of the film. The two level metal process protects the film from aqueous based processes such as photoresist development. The two level metal process furthermore does not require processes such as aqueous based chemical etching or ion milling of the surfaces of the superconducting film, thereby eliminating at least two processes which are known to degrade the superconducting properties of HTS material.

Claims

1. A method of processing an electrical device which includes HTS material such that the electrical properties of the HTS material are not significantly impaired, comprising the steps of:

providing a substrate having a layer of HTS material upon a surface thereof;

depositing a first layer of metal over a surface of the HTS material;

depositing a first masking layer over selected portions of the first metal layer in a pattern for defining a desired shape of a HTS electrical device, portions of the first masking layer having openings therethrough for exposing portions of the underlying first metal layer;

removing the exposed portions of the first metal layer and any HTS material which underlies the exposed portions of the first metal layer to expose the underlying surface of the substrate;

removing the first masking layer;

depositing a second layer of metal over the exposed surface of the substrate and over unremoved surfaces of the first metal layer;

depositing a second masking layer over selected portions of the second metal layer in a pattern for further defining the desired shape of the HTS electrical device, portions of the second masking layer having openings therethrough for exposing portions of the underlying second metal layer;

removing the exposed portions of the second metal layer; and

removing the second masking layer.

2. A method as set forth in claim 1 wherein the steps of depositing the first and the second metal layers are accomplished by vacuum depositing the metal layers to a predetermined thickness.

3. A method as set forth in claim 2 wherein the predetermined thickness is approximately 3000 angstroms or greater.

4. A method as set forth in claim 1 wherein the steps of depositing a first and a second masking layer are accomplished by applying a layer of photoresist.

5. A method as set forth in claim 4 wherein the steps of removing the first and the second masking layers are accomplished by stripping the first and the second masking layers with an organic solvent.

6. A method as set forth in claim 4 wherein the steps of removing the first and the second masking layers are accomplished by stripping the first and the second masking layers by a plasma etching in oxygen technique.

7. A method as set forth in claim 1 wherein the step of removing the exposed portions of the first metal layer is accomplished by an ion filling technique.

8. A method as set forth in claim 1 wherein the step of removing the exposed portions of the second metal layer is accomplished by a plasma etching technique which employs a process gas selected for a property of having a low etch rate of the HTS material.

9. A method as set forth in claim 1 and further comprising a step of bonding electrical conductors to exposed portions of the second metal layer in order to conductively couple the HTS material to an external circuit.

10. A method as set forth in claim 9 wherein the step of bonding is accomplished by an ultrasonic wire bonding technique.