High temperature superconductor detector fabrication process
First Claim
1. A method of processing an electrical device which includes HTS material such that the electrical properties of the HTS material are not significantly impaired, comprising the steps of:
- providing a substrate having a layer of HTS material upon a surface thereof;
depositing a first layer of metal over a surface of the HTS material;
depositing a first masking layer over selected portions of the first metal layer in a pattern for defining a desired shape of a HTS electrical device, portions of the first masking layer having openings therethrough for exposing portions of the underlying first metal layer;
removing the exposed portions of the first metal layer and any HTS material which underlies the exposed portions of the first metal layer to expose the underlying surface of the substrate;
removing the first masking layer;
depositing a second layer of metal over the exposed surface of the substrate and over unremoved surfaces of the first metal layer;
depositing a second masking layer over selected portions of the second metal layer in a pattern for further defining the desired shape of the HTS electrical device, portions of the second masking layer having openings therethrough for exposing portions of the underlying second metal layer;
removing the exposed portions of the second metal layer; and
removing the second masking layer.
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Accused Products
Abstract
A high temperature superconductor (HTS) fabrication process employs a two level metal deposition sequence for depositing a layer of metal (14, 18) over HTS material (12) to protect the HTS material from subsequent, possibly deleterious, processing steps. The process of the invention provides a capability for both patterning a HTS film material and electrically contacting the film using conventional photolithographic processes. The process of the invention furthermore accomplishes these objectives without degrading the superconducting properties of the film. The two level metal process protects the film from aqueous based processes such as photoresist development. The two level metal process furthermore does not require processes such as aqueous based chemical etching or ion milling of the surfaces of the superconducting film, thereby eliminating at least two processes which are known to degrade the superconducting properties of HTS material.
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Citations
10 Claims
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1. A method of processing an electrical device which includes HTS material such that the electrical properties of the HTS material are not significantly impaired, comprising the steps of:
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providing a substrate having a layer of HTS material upon a surface thereof; depositing a first layer of metal over a surface of the HTS material; depositing a first masking layer over selected portions of the first metal layer in a pattern for defining a desired shape of a HTS electrical device, portions of the first masking layer having openings therethrough for exposing portions of the underlying first metal layer; removing the exposed portions of the first metal layer and any HTS material which underlies the exposed portions of the first metal layer to expose the underlying surface of the substrate; removing the first masking layer; depositing a second layer of metal over the exposed surface of the substrate and over unremoved surfaces of the first metal layer; depositing a second masking layer over selected portions of the second metal layer in a pattern for further defining the desired shape of the HTS electrical device, portions of the second masking layer having openings therethrough for exposing portions of the underlying second metal layer; removing the exposed portions of the second metal layer; and removing the second masking layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification