Destructive device for metal oxide-semiconductors

• US 5,042,386 A
• Filed: 09/27/1974
• Issued: 08/27/1991
• Est. Priority Date: 09/27/1974
• Status: Expired due to Term

• Current Assignee: the united states of america as represented by the secretary of the navy
• Original Assignee: the united states of america as represented by the secretary of the navy
• Inventors: Kruse, Howard W., Breitengross, Richard A.
• Primary Examiner(s): NICHOLSON, ERIC K
• Application Number:
  US07/510,842
• Time in Patent Office: 6,178 Days
• Field of Search: 149/19.23, 149/20, 149/43, 149/40, 149/37, 149/41, 102/90, 102/364, 102/293, 174/68.5, 307/202 A, 307/202.1, 109/36, 109/37
• US Class Current: 102/293
• CPC Class Codes: C06B 45/10 the organic component containing a resin
• CPC Class Codes: C06C 9/00 Chemical contact igniters; Chemical lighters
• CPC Class Codes: H01H 39/00 Switching devices actuated by an explosion produced within the device and initiated by an electric current
• CPC Class Codes: H01L 23/585 comprising conductive layers or plates or strips or rods or rings H01L23/60, H01L23/62, H01L23/64, H01L23/66 take precedence
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A pyrotechnic composition containing from 55 to 65 percent by weight Fe.s2 O₃ powder, 15 to 25 percent by weight aluminum powder, 5 to 15 percent by weight Ba(NO₃)₂, 2 to 3 percent by weight MoS₂ and 5 to 10 percent by weight Viton A (a copolymer of vinylidene fluoride and hexafluoropropylene) is disclosed as being useful in the destruction of metal oxide-semiconductor chips.

Claims

1. A pyrotechnic composition consisting essentially of from 55 to 65 weight percent ferric oxide, from 15 to 25 weight percent aluminum, from 5 to 15 weight percent barium nitrate, from 2 to 3 weight percent molybdenum disulfide and from 5 to 10 weight percent of a copolymer of vinylidene fluoride and hexafluoropropylene.

2. A method for destroying electronic circuitry on a metal oxide-semiconductor (MOS) chip comprising the steps of:

(a) mounting a pellet consisting essentially of 55 to 65 weight percent ferric oxide, 15 to 25 weight percent aluminum, 5 to 15 weight percent barium nitrate, 2 to 3 weight percent molybdenum disulfide and from 5 to 10 weight percent of a copolymer of vinylidene fluoride and hexafluoropropylene a suitable distance away from said chip; and

(b) igniting said pellet.

3. A method according to claim 2 wherein said pellet is coated on one face with an ignition mix prepared by mixing about 2 parts by weight of a composition prepared by mixing about 60 weight percent magnesium (3-5μ

particle size) with about 40 percent of a copolymer of vinylidene fluoride and hexafluoropropylene dissolved in acetone with about 7 parts by weight of a mixture containing equal parts of aluminum and plaster of paris and said ignition mix is utilized to assist in the ignition of said pellet.