Spoked susceptor support for enhanced thermal uniformity of susceptor in semiconductor wafer processing apparatus

• US 5,044,943 A
• Filed: 08/16/1990
• Issued: 09/03/1991
• Est. Priority Date: 08/16/1990
• Status: Expired due to Term

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Anderson, Roger N., Bowman, Russell
• Primary Examiner(s): Bennett, Henry A.
• Assistant Examiner(s): Kilner, Christopher B.
• Application Number:
  US07/568,008
• Time in Patent Office: 383 Days
• Field of Search: 432/31, 432/227, 432/231, 432/232, 432/253, 432/121, 118/500, 118/725, 118/728, 118/729, 219/10.491, 219/10.67, 219/405, 219/411
• US Class Current: 432/121
• CPC Class Codes: C23C 16/4584 the substrate being rotated
• CPC Class Codes: C30B 25/10 Heating of the reaction chamber or the substrate
• CPC Class Codes: C30B 25/12 Substrate holders or susceptors
• CPC Class Codes: C30B 31/12 Heating of the reaction chamber
• CPC Class Codes: C30B 31/14 Substrate holders or susceptors
• CPC Class Codes: F27B 17/0025 Especially adapted for treating semiconductor wafers

Abstract

An apparatus is described for processing semiconductor wafers for the construction of integrated circuit structures thereon wherein a semiconductor wafer is supported on the upper surface of a uniformly heated susceptor. The apparatus comprises a chamber, a circular susceptor in the chamber for supporting a semiconductor wafer thereon, heating means in the chamber beneath the susceptor, and support means for peripherally supporting the susceptor in the chamber comprising 3-6 spokes which are each connected at one end to a central hub which is coaxial with the axis of the circular susceptor, but spaced therefrom to permit even thermal distribution across the susceptor, and opposite ends of the spokes peripherally supporting the susceptor adjacent the end edges thereof, to permit uniform heating of the susceptor by the heating means and uniform thermal distribution of the heat through the susceptor.

Claims

1. In an apparatus for processing semiconductor wafers for the construction of integrated circuit structures thereon, wherein a semiconductor wafer is supported on the upper surface of a susceptor, heated by heating means in said apparatus the improvement comprising:

support means for peripherally supporting said susceptor in said apparatus to provide thermal uniformity across said susceptor resulting in more even heating of a semiconductor wafer placed thereon, said support means comprising;

(a) a central hub spaced from the center of said susceptor and positioned in said apparatus coaxial to said susceptor; and

(b) a series of spokes radiating from said central hub and positioned between said susceptor and said heating means to engage an undersurface of said susceptor at positions adjacent the perimeter of said susceptor.

2. An apparatus for processing semiconductor wafers for the construction of integrated circuit structures thereon, wherein a semiconductor wafer is supported on the upper surface of a heated susceptor, which comprises:

(a) a chamber;

(b) a susceptor in said chamber for supporting a semiconductor wafer thereon;

(c) heating means in said chamber beneath said susceptor; and

(d) support means for peripherally supporting said susceptor in said chamber comprising;

(i) a central hub spaced from and coaxial with said susceptor in said chamber; and

(ii) a series of spokes positioned between said susceptor and said heating means which radiate from said central hub to support positions adjacent the perimeter of said susceptor;

to permit uniform heating of said susceptor by said heating means and uniform thermal distribution of said heat through said susceptor.

3. The apparatus of claim 2 wherein said susceptor comprises a generally circular plate having a first surface on which is mounted said semiconductor wafer and an undersurface which is engaged by said peripheral support means.

10. The apparatus of claim 2 wherein said peripheral support means further comprise a support ring engaged by said spokes.

4. The apparatus of claim 19 wherein said central hub is positioned coaxial with said 1 and spaced from the center of said susceptor.

5. The apparatus of claim 4 wherein said central hub is spaced from said susceptor a sufficient distance, with respect to the diameter of said susceptor, to permit said spokes to define an angle of from about 45°

to about 75°

with an axis passing through said hub and said susceptor.

6. The apparatus of claim 4 wherein said central hub is spaced from said susceptor a sufficient distance, with respect to the diameter of said susceptor, to permit said spokes to define an angle of from about 55°

to about 65°

with an axis passing through said hub and said susceptor.

7. The apparatus of claim 5 wherein said series of spokes peripherally supporting said susceptor comprise at least 3 spokes.

8. The apparatus of claim 5 wherein said series of spokes peripherally supporting said susceptor comprise from 3 to 6 spokes.

9. The apparatus of claim 7 wherein one end of each of said spokes is received in an opening formed in an undersurface of said susceptor at a position adjacent said perimeter of said susceptor.

11. The apparatus of claim 7 wherein one end of each of said spokes is received in an opening formed in an undersurface of a ring which peripherally engages and supports said susceptor adjacent said perimeter of said susceptor.

12. An apparatus for processing semiconductor wafers for construction of integrated circuit structures thereon, wherein a semiconductor wafer is supported on the upper surface of a heated susceptor, which comprises:

(a) a chamber;

(b) a circular susceptor in said chamber for supporting a semiconductor wafer thereon;

(c) heating means in said chamber beneath said susceptor; and

(d) support means for peripherally supporting said susceptor in said chamber comprising 3-6 spokes positioned between said susceptor and said heating means which are each connected at one end to a central hub which is coaxial with the axis of said circular susceptor, but spaced therefrom to permit even thermal distribution across said susceptor, and opposite ends of said spokes peripherally supporting said susceptor adjacent the end edges thereof;

to permit uniform heating of said susceptor by said heating means and uniform thermal distribution of said heat through said susceptor.

13. The apparatus of claim 12 wherein said support means comprise:

a) a peripheral support ring on which said wafer rests;

b) said spokes which engage said peripheral support ring; and

c) said central hub.

14. An apparatus for processing semiconductor wafers for the construction of integrated circuit structures thereon, wherein a semiconductor wafer is supported on the upper surface of a heated susceptor, which comprises:

(a) a chamber;

(b) a susceptor in said chamber for supporting a semiconductor wafer thereon comprising a generally circular support plate having a first surface, on which is mounted said semiconductor waver, and an undersurface;

(c) heating means in said chamber beneath said susceptor; and

(d) support means for peripherally supporting said susceptor in said chamber by engaging said undersurface of said susceptor, said support means comprising;

(i) a circular support ring having an inner shoulder thereon on which said susceptor is mounted; and

(ii) a series of spokes, positioned between said susceptor and said heating means, which radiate from a central hub to engage said circular support ring at positions adjacent the perimeter of said circular support ring;

to permit uniform heating of said susceptor by said heating means and uniform thermal distribution of said heat through said susceptor.