Method for coating substrates with silicon based compounds

• US 5,047,131 A
• Filed: 11/08/1989
• Issued: 09/10/1991
• Est. Priority Date: 11/08/1989
• Status: Expired due to Term

• Current Assignee: Von Ardenne Anlagentechnik GmbH
• Original Assignee: BOC Group Pty Limited (Linde Plc)
• Inventors: Hofmann, James J., Wolfe, Jesse D., Boehmler, Carolynn
• Primary Examiner(s): Niebling, John F.
• Assistant Examiner(s): MARQUIS, STEVEN
• Application Number:
  US07/433,690
• Time in Patent Office: 671 Days
• Field of Search: 204/192.23, 204/298.22
• US Class Current: 204/192.23
• CPC Class Codes: C23C 14/10 Glass or silica
• CPC Class Codes: C23C 14/35 by application of a magnetic field, e.g. magnetron sputtering C23C14/3457 takes precedence
• CPC Class Codes: H01J 37/3405 Magnetron sputtering

Abstract

A method of depositing thin films of silicon based compounds, particularly silicon dioxide, by cathode reactive sputtering utilizes a rotating cylindrical magnetron driven by a d.c. potential. The result is a technique of forming a uniform film on large substrates with high deposition rates. Arcing normally associated with sputtering troublesome dielectric coatings such as silicon oxides is substantially eliminated.

Claims

1. A method of depositing a thin film of silicon based compound on a substrate within an evacuated chamber, said method comprising the steps of:

(a) providing an elongated, cylindrical tubular member carrying a silicon sputtering material on an outer surface thereof;

(b) establishing within said tubular member a magnetic field to provide an erosion zone on the sputtering material extending substantially the entire length of the tubular member and circumferentially along a relatively narrow region thereof;

(c) causing a reactive gas to flow into said vacuum chamber;

(d) causing an inert gas to flow into said vacuum chamber;

(e) rotating said tubular member about its longitudinal axis to bring different portions of the sputtering material into sputtering position opposite the magnetic field;

(f) applying d.c. potential to the cylindrical member to cause sputtering; and

(g) positioning said substrate opposite said erosion zone, whereby a thin film of a silicon based compound is deposited on the substrate.

2. The method of claim 1 wherein the step of providing a cylindrical tubular member includes providing first and second elongated, cylindrical tubular members positioned adjacent each other, each of said first and second tubular members carrying a silicon sputtering material on an outer surface thereof, and further wherein the step of establishing a magnetic field includes establishing within each of said first and second tubular members respective first and second magnetic fields in order to provide an erosion zone on the sputtering material extending substantially the entire length of its respective tubular member and circumferentially along a relatively narrow region thereof.

3. The method of either of claims 1 or 2 wherein the step of causing a reactive gas to flow into the chamber includes causing an oxygen containing gas to flow thereinto, whereby the deposited film is a silicon oxide.

4. The method of either of claims 1 or 2 wherein the step of causing a reactive gas to flow into the chamber includes causing a nitrogen containing gas to flow thereinto, whereby the deposited film is a silicon nitride.

5. The method of either of claims 1 or 2 wherein the step of causing a reactive gas to flow into the chamber includes causing a carbon containing gas to flow thereinto, whereby the deposited film is a silicon carbide.

6. The method of either of claims 1 or 2, wherein the step of causing an inert gas to flow into the chamber includes causing argon to flow thereinto.

7. The method of either of claims 1 or 2 wherein said substrate is characterized by being vacuum compatible.

8. The method of either of claims 1 or 2 wherein said substrate includes any of a glass, plastic or metal.

9. The method of either of claims 1 or 2, wherein the step of providing a cylindrical member includes providing said outer surface with sputtering material consisting of at least 90% silicon.

10. The method of either of claims 1 or 2, wherein the step of providing a cylindrical member includes providing a member where the sputtering material is doped with one or more substances selected from the group consisting of aluminum, boron, antimony, phosphorus, and arsenic.

11. A method of depositing a silicon dioxide film on a substrate that is positioned within an evacuated chamber, said method comprising the steps of:

(a) providing an elongated, cylindrical tubular member carrying a silicon sputtering material on an outer surface thereof;

(b) establishing within said tubular member a magnetic field to provide an erosion zone on the sputtering material extending substantially the entire length of the tubular member and circumferentially along a relatively narrow region thereof;

(c) causing an oxygen containing gas to flow into said vacuum chamber;

(d) causing an inert gas to flow into said vacuum chamber;

(e) rotating said tubular member about its longitudinal axis to bring different portions of the sputtering material into sputtering position opposite the magnetic field;

(f) applying d.c. potential to the cylindrical member to cause sputtering; and

(g) positioning said substrate opposite said erosion zone, whereby a thin silicon dioxide film is deposited on the substrate.

12. The method of claim 11 wherein the step of providing a cylindrical member includes providing said outer surface with sputtering material consisting of at least 98% silicon.

13. The method of claim 11 wherein the step of providing a cylindrical member includes providing a member where the sputtering material is doped with one or more substances selected from the group consisting of aluminum, boron, antimony, phosphorus, and arsenic.