Josephson devices and process for manufacturing the same

• US 5,047,390 A
• Filed: 09/27/1989
• Issued: 09/10/1991
• Est. Priority Date: 10/03/1988
• Status: Expired due to Fees

• Current Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Inventors: Matsushima, Tomoaki, Enokihara, Akira, Adachi, Hideaki, Mizuno, Koichi, Higashino, Hidetaka, Wasa, Kiyotaka, Setsune, Kentaro, Hatta, Shinichiro, Kohiki, Shigemi
• Primary Examiner(s): Hille, Rolf
• Assistant Examiner(s): SAADAT, MAHSHID D
• Application Number:
  US07/413,174
• Time in Patent Office: 713 Days
• Field of Search: 357/5, 427/62, 505/702, 505/873, 505/874, 505/1
• US Class Current: 505/190
• CPC Class Codes: H10N 60/0941 comprising high-Tc ceramic materials
• CPC Class Codes: Y10S 505/702 Josephson junction present
• CPC Class Codes: Y10S 505/873 Active solid-state device
• CPC Class Codes: Y10S 505/874 with josephson junction, e.g. squid

Abstract

A Josephson device, comprising a junction formed by forming the first layer-shaped oxide superconductor thin film including a plurality of Cu-O layers on a substrate, a barrier layer thereon and the second layer-shaped oxide superconductor thin film on the barrier layer. The Josephson device according to the present invention is manufactured by forming the first layer-shaped oxide superconductor thin film on a substrate, forming a barrier layer in the same vacuum chamber, defining patterns to said barrier layer and said first layer-shaped oxide superconductor thin film, forming an interlayer insulating film on said barrier layer, removing said interlayer insulating film in a region serving as a junction, effecting exposure to oxygen plasma, forming the second layer-shaped oxide superconductor thin film in contact with a part of the surface of said barrier layer and defining patterns to said second layer-shaped oxide superconductor thin film.

Claims

1. A Josephson device, comprising a junction formed by forming the first layer-shaped oxide superconductor thin film including a plurality of Cu-O layers on a substrate, a barrier layer thereon and the second layer-shaped oxide superconductor thin film on the barrier layer wherein a material of said barrier layer is a Bi oxide type layer-shaped compound.

2. A Josephson device according to claim 1, wherein said Bi oxide type layer-shaped compound is Bi₂ Ti₄ O₁₁ or Bi₄ Ti₃ O₁₂.

3. A Josephson device comprising a junction formed by forming the first layer-shaped oxide superconductor thin film including a plurality of Cu-O layers on a substrate, a barrier layer thereon and the second layer-shaped oxide superconductor thin film on the barrier layer, wherein an interlayer insulating film is formed above said first layer-shaped oxide superconductor thin film and surrounds said junction, and a layer-shaped oxide superconductor thin film for wiring is formed on said second layer-shaped oxide superconductor thin film of said junction, wherein a material of said barrier layer or said interlayer insulating film is a Bi oxide type layer-shaped compound.

4. A Josephson device according to claim 3, wherein said Bi oxide type layer-shaped compound is Bi₂ Ti₄ O₁₁ or Bi₄ Ti₃ O₁₂.