Heterostructure laser with lattice mismatch
First Claim
1. In a semiconductor laser, a structure comprising,a substrate, anda multilayer semiconductor heterostructure disposed on said substrate, said heterostructure including an active region of at least one layer, at least one cladding layer of said heterostructure having a composition with a substantially different lattice constant than said active region.
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Abstract
Semiconductor heterostructure lasers having at least one lattice mismatched strain layer in the cladding proximate to the active region. Indium or phosphorus may be added in high concentration to form the strain layers. The strain layers may be spaced somewhat apart from the active region or may be adjacent to the active region. In either case, the strain layers decrease transparency current and increase differential gain.
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Citations
37 Claims
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1. In a semiconductor laser, a structure comprising,
a substrate, and a multilayer semiconductor heterostructure disposed on said substrate, said heterostructure including an active region of at least one layer, at least one cladding layer of said heterostructure having a composition with a substantially different lattice constant than said active region.
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11. In a semiconductor laser, a structure comprising:
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a substrate, and a multilayer semiconductor heterostructure disposed on said substrate, said heterostructure including an active region, cladding layers above and below said active region and at least one strain layer in one of said cladding layers, said active region and said cladding layers having lattice constants that substantially match one another, said strain layer having a lattice constant that differs from the lattice constant of said one of said cladding layers by at least 0.2% but not more than 4%, whereby a localized strain field is produced from lattice distortion at said strain layer, said strain layer having a thickness which is less than a critical thickness for dislocation generation. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. In a semiconductor laser, a structure comprising,
a substrate, and a multilayer semiconductor heterostructure disposed on said substrate, said heterostructure including an active region with at least one quantum well layer, and strain layers bounding said active region, said strain layers having a lattice constant that differs from said active region layers by at least 0.2%, each of said strain layers having a thickness which is less than a critical thickness for dislocation generation.
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29. In a light emitting device, a structure comprising,
a substrate, and a multilayer semiconductor heterostructure disposed on said substrate, said heterostructure including a light emitting region of at least one layer, at least one cladding layer of said heterostructure including a thin strained layer with a composition of a substantially different lattice constant than said active region.
Specification