Heterostructure laser with lattice mismatch

• US 5,048,036 A
• Filed: 01/04/1991
• Issued: 09/10/1991
• Est. Priority Date: 09/18/1989
• Status: Expired due to Term

• Current Assignee: Viavi Solutions, Inc. (Lumentum Holdings Inc.)
• Original Assignee: Spectra Diode Laboratories, Inc.
• Inventors: Welch, David F., Scifres, Donald R., Endriz, John, Streifer, deceased, William
• Primary Examiner(s): EPPS, GEORGIA Y
• Application Number:
  US07/638,358
• Time in Patent Office: 249 Days
• Field of Search: 372/45, 372/44, 372/43, 357/4, 357/16, 357/17
• US Class Current: 372/45.011
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01S 5/0021 Degradation or life time measurements
• CPC Class Codes: H01S 5/305 characterised by the doping materials used in the laser structure
• CPC Class Codes: H01S 5/3201 incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
• CPC Class Codes: H01S 5/32308 emitting light at a wavelength less than 900 nm
• CPC Class Codes: H01S 5/3403 having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
• CPC Class Codes: H01S 5/343 in AIIIBV compounds, e.g. AlGaAs-laser , InP-based laser
• CPC Class Codes: H01S 5/34306 emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
• CPC Class Codes: H01S 5/34313 with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
• CPC Class Codes: H01S 5/3432 the whole junction comprising only (AI)GaAs

Abstract

Semiconductor heterostructure lasers having at least one lattice mismatched strain layer in the cladding proximate to the active region. Indium or phosphorus may be added in high concentration to form the strain layers. The strain layers may be spaced somewhat apart from the active region or may be adjacent to the active region. In either case, the strain layers decrease transparency current and increase differential gain.

Claims

1. In a semiconductor laser, a structure comprising,

a substrate, and

a multilayer semiconductor heterostructure disposed on said substrate, said heterostructure including an active region of at least one layer, at least one cladding layer of said heterostructure having a composition with a substantially different lattice constant than said active region.

2. The structure of claim 1 wherein said substrate is composed of material selected from the group consisting of GaAs, InP, GaP, GaAlAs, GaAsP, GaSb, InSb, InGaAsP and GaAlAsP.

3. The structure of claim 1 wherein said active region includes at least one quantum well layer composed of material selected from the group consisting of GaAs, InGaAs, InGaAsP and InP.

4. The structure of claim 1 wherein said at least one cladding layer contain phosphorus.

5. The structure of claim 1 wherein said cladding layer has a linearly graded composition.

6. The structure of claim 1 wherein said cladding layer has a nonuniform composition.

7. The structure of claim 1 wherein said heterostructure includes a thin strain layer formed in said cladding layer containing a concentration of phosphorus greater than 2%, whereby a lattice mismatch with said cladding layer of at least 0.2 percent is produced.

8. The structure of claim 7 wherein said thin strain layer is positioned sufficiently close to said active region so as to induce a strain in said active region, thereby altering the bandgap.

9. The structure of claim 1 wherein said active region is bounded by adjacent Al_1-y Gs_y As_1-z P_z strain layers, where z≧

0.02 and 0≦

y≦

1, whereby strain is placed on said active region so as to increase gain.

10. The structure of claim 1 wherein said active region consists of multiple quantum wells separated by at least one barrier layer having a different lattice constant than said quantum wells.

11. In a semiconductor laser, a structure comprising:

a substrate, and

a multilayer semiconductor heterostructure disposed on said substrate, said heterostructure including an active region, cladding layers above and below said active region and at least one strain layer in one of said cladding layers, said active region and said cladding layers having lattice constants that substantially match one another, said strain layer having a lattice constant that differs from the lattice constant of said one of said cladding layers by at least 0.2% but not more than 4%, whereby a localized strain field is produced from lattice distortion at said strain layer, said strain layer having a thickness which is less than a critical thickness for dislocation generation.

12. The structure of claim 11 wherein said strain layer has a thickness on the order of 10 nm.

13. The structure of claim 11 wherein said strain layer is composed of InGaAlAsP in a GaAlAs cladding layer, said strain layer having a phosphorus content selected to provide said lattice constant difference.

14. The structure of claim 13 wherein said strain layer is composed of GaAs_1-z P_z, where z≧

0.02.

15. The structure of claim 11 wherein said strain layer is disposed adjacent to said active region.

16. The structure of claim 11 wherein said strain layer is disposed spaced away from said active region but proximate thereto, whereby said localized strain field is introduced into said active region.

17. The structure of claim 11 wherein said strain layer is disposed in said cladding layer below said active region.

18. The structure of claim 11 wherein a pair of strain layers is disposed in cladding layers both above and below said active region.

19. The structure of claim 18 wherein said pair of strain layers bound said active region and are disposed adjacent to said active region.

20. The structure of claim 11 wherein said active region consists of multiple quantum wells separated by lattice mismatched barrier layers.

21. In a semiconductor laser, a structure comprising,

a substrate, and

a multilayer semiconductor heterostructure disposed on said substrate, said heterostructure including an active region with at least one quantum well layer, and strain layers bounding said active region, said strain layers having a lattice constant that differs from said active region layers by at least 0.2%, each of said strain layers having a thickness which is less than a critical thickness for dislocation generation.

22. The structure of claim 21 wherein said strain layers contain phosphorus.

23. The structure of claim 21 wherein said active region has multiple quantum wells.

24. The structure of claim 21 wherein each of said strain layers extends across the width of said heterostructure.

25. The structure of claim 21 wherein said strain layers have a composition which varies laterally in a periodic manner, whereby said lattice constant of said strain layers also varies laterally across said heterostructure in a periodic manner, said active region thereby having multiple laser emitters.

26. The structure of claim 21 wherein there are multiple laterally spaced apart strain layers bounding each side of said active region, whereby said active region has multiple laser emitters.

27. The structure of claim 21 wherein the active region consists of multiple quantum wells separated by lattice mismatched barrier regions.

28. The structure of claim 21 wherein barrier layers of said active region between multiple quantum wells of said active region contain phosphorus.

29. In a light emitting device, a structure comprising,

a substrate, and

a multilayer semiconductor heterostructure disposed on said substrate, said heterostructure including a light emitting region of at least one layer, at least one cladding layer of said heterostructure including a thin strained layer with a composition of a substantially different lattice constant than said active region.

30. The structure of claim 29 wherein said substrate is composed of material selected from the group consisting of GaAs, InP, GaP, GaAlAs, GaAsP, GaSb, InSb, InGaAsP and GaAlAsP.

31. The structure of claim 29 wherein said active region includes at least one quantum well layer composed of material selected from the group consisting of GaAs, InGaAs, InGaAsP and InP.

32. The structure of claim 29 wherein said at least one cladding layer contain phosphorus.

33. The structure of claim 29 wherein said thin strained layer formed in said cladding layer contains a concentration of phosphorus greater than 2%, whereby a lattice mismatch with said cladding layer of at least 0.2 percent is produced.

34. The structure of claim 29 wherein said strained layer is positioned sufficiently close to said light emitting region so as to partially strain said light emitting region.

35. The structure of claim 29 wherein said active region is bounded by adjacent GaAs_1-z P_z strain layers, where z≧

0.02, whereby strain is placed on said active region so as to increase gain.

36. The structure of claim 29 wherein said cladding layer has a nonuniform composition.

37. The structure of claim 29 wherein said light emitting region consists of multiple quantum wells separated by strained barrier layers.