Electric field induced quantum well waveguides

• US 5,048,907 A
• Filed: 02/23/1990
• Issued: 09/17/1991
• Est. Priority Date: 02/23/1990
• Status: Expired due to Term

• Current Assignee: Molex Fiber Optics Incorporated (KOCH Industries Incorporated)
• Original Assignee: Amoco Corporation (BP PLC)
• Inventors: Wickman, Randy W., Moretti, Anthony L.
• Primary Examiner(s): Sikes, William L.
• Assistant Examiner(s): Wise, Robert E.
• Application Number:
  US07/484,685
• Time in Patent Office: 571 Days
• Field of Search: 350/96.12, 350/96.14
• US Class Current: 385/2
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: G02F 1/0151 modulating the refractive index
• CPC Class Codes: G02F 1/01708 in an optical wavequide structure
• CPC Class Codes: G02F 1/3138 the optical waveguides being made of semiconducting materials

Abstract

The invention is directed to laterally confined optical waveguide devices in semiconductors using quantum-well structures. An optical waveguide having a core comprising at least one quantum-well structure is interposed between first and second cladding regions such that an optical beam inserted into the core region spreads laterally with respect to a primary direction of the beam. Contacts are fabricated on the surface of the top cladding region and serve as means for applying an electric field to the core of the waveguide. The electric field induces a change in the refractive index of the portion of the quantum-well structure within the field. The change in the refractive index functions to laterally confine the propagation of the optical beam to the region of the core within the electric field, while maintaining a low loss transmission. Controlling the lateral propagation of an optical beam by way of an applied electric field allows a family of low-loss optical devices such as modulators and switches to be realized. Such devices can be fabricated without regard to their orientation in the crystalline structure of the semiconductor material.

Claims

1. A semiconductor optical element for propagating light from an optical beam comprising:

a first cladding region;

a second cladding region;

a core for receiving the optical beam interposed between the first and second cladding regions and comprising at least one quantum well structure;

each of the first and second cladding regions having dimensions that allows the light of the optical beam to spread laterally with respect to a primary direction of the beam as the light propagates through the core; and

means for applying an electric field in a selected area of the core for laterally confining the light of the optical beam to the selected area.

2. A semiconductor optical element as set forth in claim 1 wherein the first and second cladding regions and the core are compounds from Group III and Group V elements.

3. A semiconductor optical element as set forth in claim 2 wherein an index of refraction for the core is greater than an index of refraction for either the first or second cladding regions.

4. A semiconductor optical element as set forth in claim 3 wherein the first and second cladding regions include Al_x Ga_1-x As, where x is less than one.

5. A semiconductor optical element as set forth in claim 4 wherein the core comprises alternating layers of Al_x Ga_1-x As and Al_y Ga_1-y As, where z<

y≦

x.

6. A semiconductor optical element as set forth in claim 5 where the core comprises alternating layers of GaAs and Al_x Ga_1-y As, where z equals zero.

7. A semiconductor optical element as set forth in claim 1 wherein the first and second cladding regions and the core are compounds from Group II and Group VI elements.

8. A semiconductor optical element as set forth in claim 1 where the means for applying an electric field includes a rib fabricated on one of the first and second cladding regions and a substrate in contact with the other of the first and second cladding regions.

9. A semiconductor optical element as set forth in claim 8 wherein the rib is formed by epitaxially growing a layer of material on one of the first and second cladding regions and etching selected areas of the layer in order to define the rib.

10. A semiconductor optical element as set forth in claim 1 wherein one of the rib and substrate is composed of p-doped GaAs and the other is n-doped GaAs.

11. A device incorporating the semiconductor optical element as set forth in claim 1 including in combination:

an input device for delivering the optical beam to the core;

at least one output device for receiving the beam after it has propagated through the element; and

means for modulating the electric field in order to vary the light intensity of the optical beam received by the at least one output device.

12. A device as set forth in claim 11 wherein the input and output devices are optical fibers.

13. A device as set forth in claim 11 wherein the input and output devices are semiconductor waveguides formed from part of a monolithic structure including the semiconductor optical element.

14. A device as set forth in claim 13 wherein each of the output devices is a semiconductor optical element as defined in claim 1 and the device includes:

means for modulating the electric field of the output devices so as to preferentially direct the light beam to one or more of the output devices.

15. A device incorporating more than one of the semiconductor optical elements set forth in claim 1 wherein said device includes:

a monolithic substrate; and

means for optically isolating each element from all other elements on the substrate in a lateral direction with respect to the primary direction of the beam in the element.

16. A semiconductor optical element as set forth in claim 1 wherein the means for applying an electric field is shaped to create an electric field in the core which acts on the light as a lens in a lateral direction with respect to the primary direction of the optical beam.

17. A semiconductor optical element as set forth in claim 16 wherein the means for applying an electric field is shaped to create an electric field which causes the light of the optical beam to converge at a focus.

18. A semiconductor optical element as set forth in claim 17 wherein the electric field comprises a plurality of discrete electric fields and means for modulating each of the discrete electric fields in order to adjust the location of the focus.

19. In a semiconductor optical element having a core forming a plane extending along a first and second axes of a Cartesian coordinate system and positioned between two cladding regions, where the core contains at least one quantum well and has an input and output, a method comprising the steps of:

inserting light of an optical beam into the input of the core along the first axis;

allowing the light to laterally propagate substantially freely in the second axis of the core while confining lateral propagation of the light in the third axis by way of an index of refraction differential between the core and the first and second cladding regions; and

applying an electric field to a selected area of the core in order to induce a quantum confined Stark Effect shift in an absorption spectrum for the selected area of the core that sufficiently changes the refractive index of the selected area relative to the remaining area of the core so as to confine lateral propagation of the light in the second axis and direct the light to the output.

20. A method as set forth in claim 19 including the step of selecting the value of a wavelength of the optical beam so that the change in the refractive index of the core upon application of the electric field is sufficient to confine the propagating light while maintaining absorption of the light at a low level which allows the element to function as a waveguide that transmits a useable portion, of the optical beam to the output.

21. A method as set forth in claim 19 including the step of alternating between allowing the light to laterally propagate and confining lateral propagation by way of the application of the electric field in order to effectively modulate the light of the optical beam transmitted to the output.

22. A method as set forth in claim 19 wherein the first and second regions of cladding each have a thickness in the direction of the third axis such that any structure on a surface of the region facing away from the core used for the purpose of applying the electric field will not significantly affect the propagation of light through the core.

23. A method as set forth in claim 19 wherein the core is composed of alternating layers of compounds from Group III and Group V elements.

24. A method as set forth in claim 19 wherein the core is composed of alternating layers of compounds from Group II and Group VI elements.

25. A method as set forth in claim 19 wherein the optical element is fabricated on a monolithic substrate including other optical elements, the method including the step of:

optically isolating the optical element from the other optical elements sharing the monolithic substrate so that lateral propagation of the light does not interfere with the proper functioning of the other optical elements.