Sputtering method for fabricating thin film

• US 5,049,251 A
• Filed: 06/07/1989
• Issued: 09/17/1991
• Est. Priority Date: 06/10/1988
• Status: Expired due to Fees

• Current Assignee: Fujitsu Limited
• Original Assignee: Fujitsu Limited
• Inventors: Inoue, Minoru
• Primary Examiner(s): Weisstuch, Aaron
• Application Number:
  US07/362,712
• Time in Patent Office: 832 Days
• Field of Search: 204/192.12, 204/298 GF
• US Class Current: 204/192.12
• CPC Class Codes: C23C 14/34 Sputtering
• CPC Class Codes: C23C 14/564 Means for minimising impurities in the coating chamber such as dust, moisture, residual gases

Abstract

A method for sputtering by a glow discharge in gas is disclosed. The sputtering chamber is evacuated by a pump with a high speed, and the flow rate of the gas injected into the chamber is varied periodically between a high flow rate and a low flow rate. During the high flow rate, the discharge is ignited. The glow discharge is sustained during the low flow rate injection period, and when the pressure becomes too low to maintain a stable discharge, the flow rate is again increased to ignite or reinforce the electric discharge. In such a manner, the flow rate of the injection gas is periodically alternated between a high and a low injection rate. The sputtering is mostly done at the lower injection rates, and the evacuation speed is kept always high. Accordingly, contamination otherwise caused by residual gas is prevented, and a high grade sputtered film is obtained. By operating in this manner, the gas consumption is reduced and the life of the cryogenic pump, used for evacuating the sputtering chamber, is prolonged, and hence the on line operation of the sputtering device is improved.

Claims

1. A method for sputtering a material on an object by a glow discharge generated in a sputtering chamber, said method comprising the steps of:

a) placing an object in a sputtering chamber having a target made of material to be sputtered on said object therein, and evacuating the sputtering chamber;

b) injecting a gas into said sputtering chamber, and increasing the pressure in said sputtering chamber to a first pressure sufficient to ignite said glow discharge;

c) decreasing the flow rate of said injection gas, and thus decreasing the pressure in said sputtering chamber to a second pressure such that said glow discharge cannot be ignited but can be maintained for a limited time if the glow discharge has previously been ignited;

d) before said glow discharge extinguishes, increasing the flow rate of said injection gas, and thus increasing the pressure in the sputtering chamber to said first pressure to at least reinforce the glow discharge; and

e) repeatedly varying the flow rate of the injection gas, and varying the pressure in the sputtering chamber as aforesaid to maintain said glow discharge and sputtering therein.

2. A method for sputtering material as set forth in claim 1, wherein:

in said step b), injecting the gas at a first constant flow rate F1 for a first time period T1 during which the pressure in said sputtering chamber increases to said first pressure and igniting or enhancing said glow discharge;

in said step c), decreasing the gas flow rate to a second constant flow rate F2 for a second time period T2, which is longer than said first time period T1, during which the pressure in said sputtering chamber decreases to said second pressure;

in said step d), increasing the gas flow rate to said first constant flow rate F1 for said first time period T1, during which the pressure in said sputtering chamber increases to said first pressure range P1 thereby reinforcing said flow discharge; and

in said step e), repeating said steps c) and d) during the sputtering process.

3. A method for sputtering material as set forth in claim 2, wherein said second pressure is such that the glow discharge is on the verge of being distinguished.

4. A method for sputtering material as set forth in claim 2, wherein said second flow rate F2 is less than one tenth of the evacuation speed for evacuating said sputtering chamber, and said second time period T2 is more than ten times as long as said first time period T1.

5. A method for sputtering material according to claim 1, wherein:

in said step b), injecting said injection gas into said sputtering chamber at a gradually increasing flow rate, and when the electric discharge is ignited, switching to step c);

in said step c), gradually decreasing said flow rate of injection gas thereby decreasing the pressure in said sputtering chamber to a second pressure range P2, and when the gas pressure in the sputtering chamber is decreased to a predetermined second pressure, switching to step d);

in said step d), gradually increasing the flow rate of the injection gas thereby increasing the pressure in the sputtering chamber to a predetermined first pressure, and when the glow discharge is reinforced, switching to step e); and

in said step e), repeating said steps c) and d) during the sputtering process.

6. A method for sputtering material according to claim 5, wherein said second pressure is such that said glow discharge is on the verge of being distinguished.

7. A method for sputtering material according to claim 5, wherein the time duration for said step c) is shorter than the time duration for said step d).