Measuring integrity of semiconductor multi-layer metal structures

• US 5,049,811 A
• Filed: 07/02/1990
• Issued: 09/17/1991
• Est. Priority Date: 07/02/1990
• Status: Expired due to Fees

• Current Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Dreyer, Michael, Duffin, Robert L.
• Primary Examiner(s): Wieder, Kenneth A.
• Assistant Examiner(s): Nguyen, Vinh P.
• Application Number:
  US07/546,635
• Time in Patent Office: 442 Days
• Field of Search: 324/158 R, 324/537, 324/538, 324/500, 324/73.1, 324/501, 324/77 B, 324/77 D, 324/77 G, 324/612, 324/613, 324/614, 437/8, 364/487
• US Class Current: 324/537
• CPC Class Codes: G01R 31/2831 Testing of materials or semi-finished products, e.g. semiconductor wafers or substrates G01R31/318511 takes precedence; testing during manufacture H01L22/00

Abstract

A fast, nondestructive, and low cost method for measuring the integrity of semiconductor multi-layer conducting structures uses a voltage spectral density technique. The method compares the magnitude and frequency of generally non-periodic low frequency voltages induced by direct current flow in test structures to the same parameters of a defect free structure.

Claims

1. A method for detecting defects in conductive lines on semiconductor devices which comprises:

applying current to the conductive lines;

measuring voltages induced by the current;

determining a 1/f voltage spectral density of the measured voltages; and

comparing the 1/f voltage spectral density to a predetermined reference for detecting the presence of voids in the conductive lines.

2. The method of claim 1 wherein the voltages are induced by applying a direct current having a current density range from 0.1 million amps per square centimeter to 3 million amps per square centimeter.

3. The method of claim 1 wherein said determining a 1/f voltage spectral density of the measured voltages includes using Fast Fourier transform techniques.

4. The method of claim 1 wherein comparing the 1/f voltage spectral density to a predetermined reference includes comparing within 1 Hz to 51 Hz frequency range.

5. A method for measuring the integrity of semiconductor metal structures having a plurality of metal layers interconnected by vias, wherein each metal layer may have sharp bends, or cross surface discontinuities, which comprises:

applying a direct current to the structure;

measuring voltages induced along a section of the structure by the direct current;

utilizing a transform algorithm to convert the voltage measurements to a 1/f voltage spectrum; and

comparing said 1/f voltage spectrum to a predetermined reference within a 1 Hz to 51 Hz range in order to detect defects in the metal structure.

6. The method of claim 5 wherein the measuring voltage step includes measuring voltages of generally non-periodic frequencies that result from the applied direct current.

7. The method of claim 5 wherein comparing said 1/f voltage spectrum includes comparing to a defect free metal structure'"'"'s 1/f voltage spectrum.

8. A semiconductor multi-layer metal system measurement structure for determining defects in the metal system, comprising:

a plurality of sections of upper and lower metal lines alternately placed with the trailing end of one section overlapping the leading end of the next section wherein the metal lines have a predetermined width;

vias connecting the overlapping section end points to create and electrically and mechanically continuous structure having a beginning point and a terminating point;

means for contacting the beginning and terminating points and applying a current; and

means for contacting the structure and measuring a low frequency noise voltage to determine a 1/f voltage spectral density.

9. The measurement structure of claim 8 further including sharp bends which are formed with metal areas having a width greater than ten times the predetermined width of the metal lines.

10. The measurement structure of claim 8 wherein the means for applying a current is a located a distance greater than 80 microns from the means for measuring voltage.

11. A method for measuring the integrity of semiconductor layered metal structures which comprises:

applying a direct current to the structure;

measuring voltages having generally non-periodic frequencies that are induced by the direct current;

converting the measured voltages to a 1/f voltage spectral density; and

comparing the 1/f voltage spectral density to a predetermined reference to detect defects in the metal structure.

12. The method of claim 11 wherein comparing the 1/f voltage spectral density includes comparing within a 1 Hz to 51 Hz range to a reference having desired values.