X-Ray lithography mask and devices made therewith

• US 5,051,326 A
• Filed: 05/26/1989
• Issued: 09/24/1991
• Est. Priority Date: 05/26/1989
• Status: Expired due to Term

• Current Assignee: American Telephone & Telegraph Company (AT&T, Inc.), Bell Telephone Laboratories, Inc. (Nokia Corporation)
• Original Assignee: AT&T, Inc.
• Inventors: Trimble, Lee E., Celler, George K.
• Primary Examiner(s): Bowers, Jr., Charles L.
• Assistant Examiner(s): NEVILLE, THOMAS
• Application Number:
  US07/358,312
• Time in Patent Office: 851 Days
• Field of Search: 430/5, 430/966, 430/967, 378/35
• US Class Current: 430/5
• CPC Class Codes: G03F 1/22 Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
• CPC Class Codes: Y10S 430/167 X-ray
• CPC Class Codes: Y10S 430/168 X-ray exposure process

Abstract

A mask for X-ray lithography is produced by initially forming a thin layer of polycrystalline silicon on a silicon oxide containing substrate. A portion of the substrate at the periphery of the major surface opposite the silicon layer is masked. The exposed portion of the substrate is removed by an etchant that is selective for silicon oxide containing composition relative to silicon, e.g. aqueous HF. The resulting membrane of silicon on a peripheral region of silicon oxide containing compositions is in tensile stress as required for lithography, but is robust. Metal, X-ray absorbing patterns are formed on the silicon by standard lithographic procedures.

Claims

1. A process for fabricating an exposure mask suitable for X-ray lithography, said mask comprising a region of X-ray attenuating material on an essentially uninterrupted polycrystalline silicon membrane, said process comprising the steps of 1) forming a body comprising a polycrystalline silicon region on a first surface of a substrate comprising a silicon oxide containing composition, 2) covering a peripheral region of said substrate on the second surface opposing said first surface, 3) subjecting said body to an etchant that selectively etches said silicon oxide containing composition relative to said silicon such that the uncovered region of said substrate is etched to form said membrane and 4) at some point during said process forming said X-ray attenuating region.

2. The process of claim 1 wherein said silicon oxide containing composition comprises a material chosen from the group consisting of silica, silicates and quartz.

3. The process of claim 1 wherein said etchant comprises aqueous HF.

4. A mask suitable for X-ray lithography, said mask comprising a patterned X-ray attenuating material disposed on an essentially uninterrupted polycrystalline silicon membrane, said membrane being supported by a region comprising a silicon oxide containing composition wherein said membrane is sufficiently thin so that it does not substantially attenuate said X-rays.

5. The mask of claim 4 wherein said silicon oxide containing composition comprises a material chosen from the group consisting of silica, silicates and quartz.