Dual state memory storage cell with improved data transfer circuitry

• US 5,053,996 A
• Filed: 02/26/1991
• Issued: 10/01/1991
• Est. Priority Date: 02/26/1991
• Status: Expired due to Term

• Current Assignee: SGS-Thomson Microelectronics (STMicroelectronics NV)
• Original Assignee: SGS-Thomson Microelectronics (STMicroelectronics NV)
• Inventors: Slemmer, Wiliam C.
• Primary Examiner(s): CLAWSON JR, JOSEPH
• Application Number:
  US07/661,555
• Time in Patent Office: 217 Days
• Field of Search: 365/154, 365/156, 365/190, 365/205, 365/207, 365/208, 365/198
• US Class Current: 365/156
• CPC Class Codes: G11C 11/412 using field-effect transistors only
• CPC Class Codes: G11C 11/5621 using charge storage in a floating gate

Abstract

A dual storage cell is disclosed, which utilizes memory cells of cross-coupled inverters together with isolation transistors coupled between the driver transistors of the inverters and the reference supply node. Transfer circuitry is included in the dual storage cell, which couples one of the data nodes of the destination memory cell to a power supply node responsive to a transfer enable signal, and responsive to the data state of the source memory cell. During the transfer operation, the isolation transistors in the destination cell are turned off so that the cross-coupled inverters are not biased to the reference supply node. This allows the data transfer to occur without a DC current path between the power supply node and the reference supply node. The preferred implementation uses complementary transistors for the isolation transistors relative to the transfer devices, and to connect the gates together to the transfer enable signal. Either single or dual isolation transistors may be used in the memory cell, depending on layout constraints.

Claims

1. A dual storage cell, comprising:

a first memory cell, comprising;

first and second cross-coupled inverters, driving first and second data nodes, respectively; and

an isolation circuit, having a conduction path coupled between said first and second cross-coupled inverters and a first power supply node, and having a control terminal;

a second memory cell, comprising;

first and second cross-coupled inverters, driving first and second data nodes, respectively; and

a first transfer circuit, comprising;

a first series circuit coupled between the first data node of said first memory cell and a second power supply node, having a control terminal for receiving a transfer enable signal enabling said first series circuit to couple said second power supply node to said first data node of said first memory cell, responsive to the data state of said second memory cell; and

a second series circuit coupled between the second data node of said first memory cell and said second power supply node, having a control terminal for receiving a transfer enable signal enabling said second series circuit to couple said second power supply node to said second data node of said first memory cell, responsive to the data state of said second memory cell;

wherein said control terminal of said isolation circuit is controlled in such a manner as to isolate said first and second cross-coupled inverters from said first power supply node during a portion of the time that said transfer enable signal enables said first and second series circuits.

2. The cell of claim 1, wherein said first series circuit comprises:

first and second series transistors, having their conduction paths connected in series between said first data node of said first memory cell and said second power supply node, said first series transistor having its gate receiving said transfer enable signal, and said second series transistor having its gate coupled to said first data node of said second memory cell;

and wherein said second series circuit comprises;

third and fourth series transistors, having their conduction paths connected in series between said second data node of said first memory cell and said second power supply node, said third series transistor having its gate receiving said transfer enable signal, and said fourth series transistor having its gate coupled to said second data node of said second memory cell.

3. The cell of claim 2, wherein said first, second, third and fourth transistors are field-effect transistors.

4. The cell of claim 3, wherein said isolation circuit comprises:

a fifth field effect transistor, having its source-to-drain path coupled between said first and second cross-coupled inverters and said first power supply node, and having a gate as said control terminal.

5. The cell of claim 4, wherein the gate of said fifth field effect transistor also receives said transfer enable signal in such a manner that said transfer enable signal turns off said fifth field effect transistor and turns on said first and third series transistors in said first transfer circuit.

6. The cell of claim 5, wherein the conductivity type of said fifth field effect transistor is opposite from that of said first and third series transistors.

7. The cell of claim 3, wherein said first and second cross-coupled inverters each comprise a field-effect driver transistor and a load device;

and wherein said isolation circuit comprises;

a fifth field-effect transistor having its source-to-drain path coupled between the source of the driver transistor of said first cross-coupled inverter and said first power supply node; and

a sixth field-effect transistor having its source-to-drain path coupled between the source of the driver transistor of said second cross-coupled inverter and said first power supply node;

wherein said fifth and sixth field effect transistors have their gates coupled together as said control terminal of said isolation circuit.

8. The cell of claim 7, wherein the gates of said fifth and sixth field-effect transistors receive said transfer enable signal in such a manner that said transfer enable signal turns off said fifth and sixth field-effect transistors and turns on said first and third series transistors in said first transfer circuit.

9. The cell of claim 8, wherein the conductivity type of said fifth and sixth field-effect transistors is opposite from that of said first and third series transistors.

10. The cell of claim 1, wherein said second memory cell further comprises:

an isolation circuit, having a conduction path coupled between said first and second cross-coupled inverters of said second memory cell and said first power supply node, and having a control terminal;

and further comprising;

a second transfer circuit, comprising;

a third series circuit coupled between the first data node of said second memory cell and said second power supply node, having a control terminal for receiving a second transfer enable signal enabling said second series circuit to couple said second power supply node to said first data node of said second memory cell, responsive to the data state of said first memory cell; and

a fourth series circuit coupled between the second data node of said second memory cell and said second power supply node, having a control terminal for receiving a second transfer enable signal enabling said fourth series circuit to couple said second power supply node to said second data node of said second memory cell, responsive to the data state of said first memory cell;

wherein said control terminal of said isolation circuit of said second memory cell is controlled in such a manner as to isolate said first and second cross-coupled inverters of said second memory cell from said first power supply node during a portion of the time that said second transfer enable signal enables said third and fourth series circuits.

11. A method of transferring data from a first memory cell to a second memory cell in a dual storage cell, said second memory cells comprising first and second cross-coupled inverters biased between first and second power supply nodes, and having first and second data nodes, comprising the steps of:

disconnecting said first and second cross-coupled inverters from being biased by said second power supply node;

writing data to said second memory cell according to the contents of said first memory cell, comprising the steps of;

coupling said first data node to said first power supply node responsive to said first memory cell storing a first data state; and

coupling said second data node to said first power supply node responsive to said first memory cell storing a second data state; and

after said writing step, connecting said first and second cross-coupled inverters to be biased by said second power supply node.

12. The method of claim 11, further comprising:

receiving a first transfer enable signal, indicating that a transfer of data from said first memory cell to said second memory cell is to be performed;

and wherein said writing step is performed responsive to said first transfer enable signal.

13. The method of claim 12, wherein said disconnecting step is performed responsive to said first transfer enable step.

14. The method of claim 13, wherein said connecting step is performed responsive to receiving the end of said first transfer enable signal.

15. The method of claim 11, wherein said first and second cross-coupled inverters each comprise a field-effect driver transistor and a load device;

wherein said disconnecting step comprises;

turning off an isolation transistor coupled in series between the sources of said driver transistors of said first and second inverters and said second power supply node;

and wherein said connecting step comprises;

turning on said isolation transistor.

16. The method of claim 15, wherein said dual storage cell further comprises first and second series field-effect transistors having their source-drain paths connected in series between said first power supply node and said first data node of said second memory cell, and third and fourth series field-effect transistors having their source-drain paths connected in series between said first power supply node and said second data node of said second memory cell;

wherein said second memory cell further comprises first and second complementary data nodes, said first data node of said first memory cell being coupled to the gate of said second series transistor, and said second data node of said first memory cell being coupled to the gate of said fourth series transistor;

and wherein said writing step comprises biasing the gates of said first and third series transistors into the on-state.

17. The method of claim 16, wherein said isolation transistor is of the opposite conductivity type of said first and third series transistors;

and wherein the gate of said isolation transistor is connected to the gates of said first and third series transistors

18. The method of claim 11, wherein said first and second cross-coupled inverters each comprise a field-effect driver transistor and a load device;

wherein said disconnecting step comprises;

biasing the gates of first and second isolation transistors into the off-state, said first and second isolation transistors having their source-to-drain paths coupled between the source of said driver transistor in said first and second cross-coupled inverters, respectively, and said second power supply node;

and wherein said connecting step comprises;

biasing the gates of said first and second isolation transistors into the on-state.

19. The method of claim 18, wherein said dual storage cell further comprises first and second series field-effect transistors having their source-drain paths connected in series between said first power supply node and said first data node of said second memory cell, and third and fourth series field-effect transistors having their source-drain paths connected in series between said first power supply node and said second data node of said second memory cell;

wherein said second memory cell further comprises first and second complementary data nodes, said first data node of said first memory cell being coupled to the gate of said second series transistor, and said second data node of said first memory cell being coupled to the gate of said fourth series transistor;

and wherein said writing step comprises biasing the gates of said first and third series transistors into the on-state.

20. The method of claim 19, wherein said first and second isolation transistors are of the opposite conductivity type of said first and third series transistors;

and wherein the gates of said first and second isolation transistors are connected to the gates of said first and third series transistors.