Electrolytic etch for preventing electrical shorts in solar cells on polymer surfaces

• US 5,055,416 A
• Filed: 12/07/1988
• Issued: 10/08/1991
• Est. Priority Date: 12/07/1988
• Status: Expired due to Fees

• Current Assignee: Minnesota Mining and Manufacturing Co (3M Company)
• Original Assignee: Minnesota Mining and Manufacturing Co (3M Company)
• Inventors: Weber, Michael F.
• Primary Examiner(s): Hearn, Brian E.
• Assistant Examiner(s): Dang, Trung
• Application Number:
  US07/281,099
• Time in Patent Office: 1,035 Days
• Field of Search: 204/129.1, 204/129.2, 204/129.3, 204/129.55, 437/170, 437/245, 437/181, 437/923
• US Class Current: 438/96
• CPC Class Codes: H01L 31/022466 made of transparent conductive layers, e.g. TCO, ITO layers
• CPC Class Codes: H01L 31/022475 composed of indium tin oxide [ITO]
• CPC Class Codes: H01L 31/206 Particular processes or apparatus for continuous treatment of the devices, e.g. roll-to roll processes, multi-chamber deposition
• CPC Class Codes: H01L 31/208 Particular post-treatment of the devices, e.g. annealing, short-circuit elimination
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product
• CPC Class Codes: Y10S 136/29 Testing, calibrating, treating, e.g. aging

Abstract

A method for preventing shorts and shunts in solar cells having in order, an insulating substrate, a conductive metal layer on the substrate, an amorphous silicon layer and a transparent conductive layer. The method includes anodic etching of exposed portions of the metal layer after deposition of the amorphous silicon and prior to depositing the transparent conductive layer.

Claims

1. A method for preparing an amorphous silicon p-i-n solar cell which incorporates a conductive metal layer interposed between an insulating substrate layer and the p layer of the solar cell and a transparent conductive layer overlying the n layer of the solar cell, the method comprising:

anodically etching any exposed portions of the metal layer, after deposition of the amorphous silicon and prior to application of the transparent conductive layer, to substantially prevent shorts or shunts being formed in the solar cell.

2. The method of claim 1 wherein the anodic etching involves an electrolyte solution contacting a cathode.

3. The method of claim 2 wherein the electrolyte solution further contacts a reference electrode.

4. The method of claim 3 wherein the conductive metal layer is aluminum, the reference electrode is a dynamic hydrogen electrode and the metal layer has a potential, relative to the dynamic hydrogen electrode, from about 1.0 to about 3.0 volts.

5. The method of claim 4 wherein the potential is from about 1.5 to about 2.0 volts.

6. The method of claim 1 wherein the conductive metal layer is chosen from the group consisting of aluminum, nickel, silver, tin and stainless steel.

7. The method of claim 2 wherein the electrolyte solution is an alkaline solution.

8. The method of claim 2 wherein the electrolyte solution consists of volatile components.

9. The method of claim 2 wherein the electrolyte solution is an aqueous solution.

10. The method of claim 7 wherein the electrolyte solution includes ammonium hydroxide.

11. A method for forming a silicon device having a metal conductive layer on an insulating substrate, a second conductive layer, and at least one interposed amorphous silicon layer, the device substantially free of shorts or shunts between the metal conductive layer and the second conductive layer, the method comprising:

providing a conductive metal layer;

depositing a silicon layer upon the conductive metal layer so as to generally cover the conductive metal layer;

anodic etching of any remaining uncovered conductive metal layer; and

depositing the second conductive layer.

12. The method of claim 11 further comprising:

precoating the silicon layer with a thin precoat layer of a transparent conductive oxide, effective to prevent oxidation of silicon.

13. The method of claim 12, wherein the precoat layer comprises:

ZnO (optionally doped with Al, In, Ga, or B);

SnO₂ (doped with F or Sb);

CdSnO₄ ;

TiO₂ (doped with F), or SrTiO₂.

14. A method for preparing an amorphous silicon n-i-p solar cell which incorporates a conductive metal layer interposed between an insulating substrate layer and the n layer of the solar cell and a transparent conductive layer overlying the p layer of the solar cell, the method comprising:

anodically etching any exposed portions of the metal layer, after deposition of the amorphous silicon and prior to application of the transparent conductive layer, to substantially prevent shorts or shunts being formed in the solar cell.

15. The method of claim 14 wherein the anodic etching involves an electrolyte solution contacting a cathode.

16. The method of claim 15 wherein the electrolyte solution further contacts a reference electrode.

17. The method of claim 16 wherein the conductive metal layer is aluminum, the reference electrode is a dynamic hydrogen electrode and the metal layer has a potential, relative to the dynamic hydrogen electrode, from about 1.0 to about 3.0 volts.

18. The method of claim 17 wherein the potential is from about 1.5 to about 2.0 volts.

19. The method of claim 14 wherein the conductive metal layer is chosen from the group consisting of aluminum, nickel, silver, tin and stainless steel.

20. The method of claim 15 wherein the electrolyte solution includes amonium hydroxide.