Ultra-high speed light activated microwave switch/modulation using photoreactive effect

• US 5,055,810 A
• Filed: 08/29/1990
• Issued: 10/08/1991
• Est. Priority Date: 12/31/1986
• Status: Expired due to Term

• Current Assignee: Raytheon Company (Rtx Corporation)
• Original Assignee: Hughes Aircraft Company (Rtx Corporation)
• Inventors: Hsu, Hui-Pin, de La Chapelle, Michael
• Primary Examiner(s): GENSLER, PAUL L
• Application Number:
  US07/576,140
• Time in Patent Office: 405 Days
• Field of Search: 333/103, 333/104, 333/247, 333/262, 307/311, 332/52, 332/56, 332/164, 332/175-178
• US Class Current: 333/262
• CPC Class Codes: H01L 31/108 the potential barrier being of the Schottky type
• CPC Class Codes: H01P 1/15 by semiconductor devices
• CPC Class Codes: H04B 2210/006 Devices for generating or processing an RF signal by optical means

Abstract

The RF/microwave switch/modulator uses an optically controlled diode 20. The reactance of the diode may be varied by varying the illumination intensity. In this fashion, the photodiode in conjunction with an external circuit can switch or modulate a microwave signal by varying the reactance of the diode using a laser light source or the like. The bias voltage may be varied to electronically tune the diode so that the microwave frequency of operation can be electronically controlled.

Claims

1. A high speed switch comprising:

a body of semiconductor material having a diode junction therein and contacts on opposing surfaces thereof, said contacts and diode junction defining a microwave shunt reactance device having an operating frequency;

a photoactive area at one of said surfaces such that said microwave shunt reactance device is switched between a signal matching state and a signal reflecting state in response to a change in illumination intensity upon said photoactive area;

a source of optical illumination for illuminating said photoactive area; and

a variable voltage supply coupled to said contacts for changing the voltage supplied by said voltage supply to cause a change in said operating frequency.

2. The switch as claimed in claim 1 wherein one of said contacts is an ohmic contact.

3. The switch as claimed in claim 2 wherein another of said contacts is a Schottky contact.

4. The switch as claimed in claim 1 wherein one of said contacts is a Schottky contact.

5. The switch as claimed in claim 1 wherein said semiconductor material is selected from the group consisting of silicon, gallium arsenide, germanium arsenide, indium, gallium arsenide and indium gallium arsenide phosphate.

6. The switch as claimed in claim 1 wherein said source of optical illumination is a laser.

7. The switch as claimed in claim 1 further comprising:

a resonant circuit coupled to said switch, said resonant circuit being selectively detuned when said photoactive area is illuminated.

8. The switch as claimed in claim 7 wherein said resonant circuit is an impedance matching circuit for substantially negating and resonating the reactance of said switch when said photoactive area is unilluminated.

9. The switch as claimed in claim 3 wherein said impedance matching circuit transforms said reactance of switch to a system impedance of nominally fifty ohms.

10. The switch as claimed in claim 8 wherein said impedance matching circuit and said switch define a one-port reflection/absorption switch.

11. The switch as claimed in claim 1 further comprising:

a circulator for providing separate input and output ports to said switch.

12. The switch as claimed in claim 1 further comprising:

a resonating inductance coupled to said switch to define a two-port transmission/reflection switch.

13. A high speed microwave modulator comprising:

a body of semiconductor material having a diode junction therein and contacts on opposing surfaces thereof, said contacts and diode junction defining a microwave signal shunt reactance device having an operating frequency;

a photoactive area at one of said surfaces such that said microwave signal is amplitude modulated in response to modulation of illumination intensity upon said photoactive area;

a source of optical illumination for illuminating said photoactive area; and

a variable voltage supply coupled to said contacts for changing the voltage supplied by said voltage supply to cause a change in said operating frequency.

14. The modulator as claimed in claim 13 wherein one of said contacts is an ohmic contact.

15. The modulator as claimed in claim 14 wherein another of said contacts is a Schottky contact.

16. The modulator as claimed in claim 13 wherein one of said contacts is a Schottky contact.

17. The modulator as claimed in claim 13 wherein said semiconductor material is selected from the group consisting of silicon, gallium arsenide, garmanium arsenide, indium, gallium arsenide and indium gallium arsenide phosphate.

18. The modulator as claimed in claim 13 wherein said source of optical illumination is a laser.

19. The modulator as claimed in claim 13 further comprising:

a resonant circuit coupled to said modulator, said resonant circuit being selectively detuned when said photoactive area is illuminated.

20. The modulator as claimed in claim 19 wherein said resonant circuit is an impedance matching circuit for varying the reactance of said modulator when said source is modulated.

21. The modulator as claimed in claim 20 wherein said impedance matching circuit transforms said reactance of modulator to a system impedance of nominally fifty ohms.

22. The modulator as claimed in claim 13 further comprising:

a circulator for providing separate input and output ports to said modulator.

23. The modulator as claimed in claim 13 further comprising:

a resonating inductance coupled to said modulator to define a two-port modulator.