Silicide/metal floating gate process

• US 5,057,447 A
• Filed: 07/09/1990
• Issued: 10/15/1991
• Est. Priority Date: 07/09/1990
• Status: Expired due to Term

• Current Assignee: Texas Instruments, Inc.
• Original Assignee: Texas Instruments, Inc.
• Inventors: Paterson, James L.
• Primary Examiner(s): Hearn, Brian E.
• Assistant Examiner(s): Thomas, Tom
• Application Number:
  US07/549,862
• Time in Patent Office: 463 Days
• Field of Search: 437/43, 437/47, 437/48, 437/51, 437/52, 437/60, 437/191, 437/192, 437/193, 437/195, 437/200, 437/228, 437/233, 437/235, 357/23.5
• US Class Current: 438/253
• CPC Class Codes: H01L 28/40 Capacitors
• CPC Class Codes: H01L 29/40114 the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
• CPC Class Codes: H10B 69/00 Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Abstract

The invention provides an integrated circuit capacitor with a silicided polysilicon electrode (which silicide has not been used as an etch stop) as a bottom plate and a metal layer as a top plate. Subsequent to the formation of a patterned polysilicon layer, a multilevel dielectric is formed, and a via is etched therethrough to a polysilicon capacitor bottom plate. Then the polysilicon bottom plate is clad with a refractory metal silicide. The capacitor dielectric is then deposited, such a dielectric preferably consisting of an oxide/nitride layered dielectric. Contacts are etched to diffusion and to polysilicon electrodes as desired, and metal is deposited and patterned to form the top electrode of the capacitor over the capacitor dielectric, and to make contact as desired to diffusion and to polysilicon. This provides an improved silicide layer in the capacitor, as compared to processes which etch through oxide down to the silicide, and thus are using the silicide as an etch stop.

Claims

1. A method for fabricating a floating-gate transistor at a surface of a semiconductor body, said method comprising the steps of:

forming a field dielectric structure at said surface, to define a moat region not covered by said field dielectric structure;

forming source diffusion and a drain diffusion at said moat region;

forming a floating gate, comprising polycrystalline silicon, said floating gate having a capacitor bottom plate section disposed over said field dielectric structure, and having a gate portion extending off of said field dielectric and disposed between said source and drain diffusions;

forming a multilevel dielectric layer overall;

removing a portion of said multilevel dielectric layer over said capacitor bottom plate section to expose a portion thereof;

forming a silicide film, disposed on said exposed portion of said capacitor bottom plate section;

forming a capacitor dielectric overall;

removing a portion of said capacitor dielectric and said multilevel dielectric layer over said moat region to expose a portion thereof; and

forming a patterned conductor layer, comprising a metal layer, with a first portion comprising a top plate disposed over and in contact with said capacitor dielectric layer at said capacitor bottom plate section, and a second portion disposed over and in direct contact with at least one of said source diffusion and said drain diffusion.

2. The method of claim 1, wherein said step of forming said top plate comprises:

forming a first metal layer in contact with said capacitor dielectric prior to the step of removing a portion of said multilevel dielectric layer over said moat region; and

forming a second metal layer in contact with said first metal layer after said step of removing a portion of said multilevel dielectric layer over said moat region, wherein said second metal layer is in direct contact with said exposed portion of said moat region.

3. The method of claim 2, wherein said first metal layer comprises titanium and tungsten.

4. The method of claim 1, wherein said step of forming a capacitor dielectric comprises:

forming a layer of silicon dioxide overall; and

forming a layer of silicon nitride over said layer of silicon dioxide.

5. The method of claim 1, wherein said depositing steps are performed by way of low pressure chemical vapor deposition.

6. The method of claim 1, wherein said step of removing a portion of said multilevel dielectric layer over said capacitor bottom plate section to expose a portion thereof also exposes portions of said multilevel dielectric layer over said source or drain diffusions, and said step of forming a silicide film disposed on said exposed portion of said capacitor bottom plate section, also forms a silicide film on exposed portions of said source or drain diffusions.