Process for forming the ridge structure of a self-aligned semiconductor laser

• US 5,059,552 A
• Filed: 03/15/1991
• Issued: 10/22/1991
• Est. Priority Date: 04/06/1990
• Status: Expired due to Term

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: International Business Machines Corporation
• Inventors: Webb, David J., Hoh, Peter D., Heuberger, Wilhelm, Harder, Christoph S.
• Primary Examiner(s): Hearn, Brian E.
• Assistant Examiner(s): TRINH, MICHAEL MANH
• Application Number:
  US07/669,816
• Time in Patent Office: 221 Days
• Field of Search: 437/129, 437/126, 437/133, 437/234, 437/944, 437/23, 148/DIG. 95, 148/DIG. 100
• US Class Current: 438/40
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/3185 of siliconnitrides
• CPC Class Codes: H01S 5/22 having a ridge or stripe structure
• CPC Class Codes: Y10S 148/10 Lift-off masking
• CPC Class Codes: Y10S 438/951 Lift-off
• CPC Class Codes: Y10S 438/978 forming tapered edges on substrate or adjacent layers

Abstract

A process for forming the ridge structure of a self-aligned InP-system, double heterostructure (DH) laser, particularly useful for long wavelength devices as required for signal transmission systems includes a thin Si₃ N₄ layer (41) inserted between a photoresist mask (42) that defines the ridge structure, and a contact layer (35). Using a Si₃ N₄ layer (4) deposited at a high plasma excitation frequency (RF) for adhesion promotion, and a low frequency deposited (LF) Si₃ N₄ layer (43) for device embedding, provides for the etch selectively required in the process step that is used to expose the contact layer to ohmic contact metallization deposition.

Claims

1. A process for forming a self-aligned ridge structure for a III-V compound semiconductor double heterostructure laser device, comprising the steps of:

providing an epitaxially grown, layered heterostructure comprised of, from top to bottom;

a) a contact layer;

b) a first cladding layer;

c) an active region for recombination and light generation;

d) a second cladding layer, wherein said first and second cladding layers form a waveguide for light confinement and gain;

depositing a first silicon oxynitride layer on top of said contact layer in a PECVD process, at a high (RF) excitation frequency;

depositing and patterning a photoresist layer on top of said first silicon oxynitride layer for use as a mask for the definition of the ridge structure;

reactive ion etching (RIE) said first silicon oxynitride layer, thereby leaving the section covered by said photoresist layer intact;

selective etching said contact layer down to said first cladding layer, thereby obtaining underneath said first silicon oxynitride layer a crystallographic etch angle and a small undercut;

selective etching said first cladding layer to a predetermined depth, leaving said contact layer substantially unaffected;

depositing a conformal, second silicon oxynitride layer in a low (LF) exitation frequency, PECVD process, said second silicon oxynitride layer thereby having an etch rate lower than that of said first silicon oxynitride layer;

lift-off of the part of said second silicon oxynitride layer deposited on top of said photoresist layer by dissolving said photoresist layer, thereby exposing said first silicon oxynitride layer; and

selective removal of said first silicon oxynitride layer, thereby leaving said second silicon oxynitride layer and said contact layer substantially unaffected.

2. The process for forming a self-aligned ridge structure for a III-V compound semiconductor double heterostructure laser device according to claim 1, wherein said active layer is comprised of GaInAsP, said first and second cladding layers are comprised of InP and said contact layer is comprised of GaInAs.

3. The process for forming a self-aligned ridge structure for a III-V compound semiconductor double heterostructure laser device according to claim 1, wherein said first and said second silicon oxynitride layers are comprised of Si₃ N₄.

4. The process for forming a self-aligned ridge structure for a III-V compound semiconductor double heterostructure laser device according to claim 3, wherein said first silicon oxynitride layer is deposited at a plasma exitation frequency on the order of 1 MHz higher than the plasma exitation frequency at which said second silicon oxynitride layer is applied.

5. The process for forming a self-aligned ridge structure for a III-V compound semiconductor double heterostructure laser device according to claim 1, wherein said first silicon oxynitride layer is deposited using a Plasma Enhanced Chemical Vapor Deposition (PECVD) process at a plasma exitation frequency higher than 1 MHz and with an ammonia (NH₃) addition to the plasma, and said second silicon oxynitride layer is deposited using a PECVD process at a plasma exitation frequency lower than 100 kHz without an ammonia (NH₃) addition to the plasma.

6. The process for forming a self-aligned ridge structure for a III-V compound semiconductor double heterostructure laser device according to claim 1, wherein said first silicon oxynitride layer is selectively removed in a Buffered Hydro Fluoric (BHF) solution which does not substantially affect said second silicon oxynitride layer.

7. The process for forming a self-aligned ridge structure for a III-V compound semiconductor double heterostructure laser device according to claim 1, wherein said photoresist layer runs in the (110) direction of the substrate.

8. The process for forming a self-aligned ridge structure for a III-V compound semiconductor double heterostructure laser device according to claim 1, wherein the wavelength of light in said active layer is on the order of 1.3 μ

m.