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Complementary heterojunction field effect transistor with an anisotype N+ g a -channel devices

  • US 5,060,031 A
  • Filed: 09/18/1990
  • Issued: 10/22/1991
  • Est. Priority Date: 09/18/1990
  • Status: Expired due to Term
First Claim
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1. A complementary GaAs based heterostructure integrated circuit structure comprising:

  • a semi-insulating GaAs substrate having a major surface;

    a first epitaxial layer of substantially intrinsic GaAs grown directly over the major surface;

    a second epitaxially grown layer of substantially intrinsic AlGaAs grown directly over the first layer;

    a third epitaxially grown layer of substantially intrinsic GaAs grown over the second layer;

    a fourth epitaxial layer of substantially intrinsic InGaAs grown over the third layer;

    a fifth epitaxial layer of substantially intrinsic AlAs grown over the fourth layer;

    a sixth layer of substantially intrinsic AlGaAs grown over the fifth layer;

    first and second N-type regions formed in the surface of the sixth layer and extending to the third layer, wherein a portion of the fourth layer which lies between the first and second N-type regions forms a channel of an N-channel HFET;

    a conductive material formed on top of the sixth layer between and separated from the first and second N-type regions and making a rectifying contact with the sixth layer, wherein the conductive material serves as a gate electrode of the N-channel HFET;

    electrodes formed on the first and second N-type regions to serve as source-drain electrodes of the N-channel HFET;

    first and second P-type regions formed in the surface of the sixth layer and extending to the third layer, wherein a portion of the fourth layer which lies between the first and second P-type regions forms a channel of a P-channel HFET;

    an epitaxially grown N-type anisotype region covering a portion of the sixth layer between and separated from the first and second P-type regions;

    an epitaxially grown pre-ohmic layer covering the N-type anisotype region;

    a conductive material formed on top of the pre-ohmic layer making contact with the pre-ohmic layer, wherein the conductive material serves as a gate electrode of the P-channel HFET;

    electrodes formed on the first and second P-type regions to serve as source-drain electrodes of the P-channel HFET; and

    an insulating region formed between the N-channel and the P-channel HFET.

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