Optical integrated modulator

• US 5,061,030 A
• Filed: 08/14/1990
• Issued: 10/29/1991
• Est. Priority Date: 08/15/1989
• Status: Expired due to Term

• Current Assignee: Advantest Corporation
• Original Assignee: Optical Measurement Technology Development Co., Ltd.
• Inventors: Miyamoto, Hiroshi, Iwaoka, Hideto
• Primary Examiner(s): Healy, Brian
• Application Number:
  US07/567,354
• Time in Patent Office: 441 Days
• Field of Search: 350/96.11, 350/96.12, 350/96.13, 350/96.14, 350/96.17
• US Class Current: 385/3
• CPC Class Codes: G02F 1/0356 controlled by a high-frequency electromagnetic wave component in an electric waveguide structure

Abstract

This invention enables low voltage operation and improves matching in velocities of the radio frequency and of light by lowering effective index and to thereby expand modulation frequency bandwidth by structuring an optical modulator where a substrate of the material of which refractive index changes by an application of electric field description, and the insulating buffer layers are eliminated from the regions other than the electrodes. By structuring the modulator in a manner to satisfy the prescribed conditions with dimensions of each unit, the light can be matched in complete phase matching (group velocity matching) with radio frequency while characteristic impedance of the electrodes is fixed at a desired value.

Claims

1. An optical modulator comprising:

a substrate formed of a material which has a refractive index that changes when an electric field is applied;

an optical waveguide formed in contact with said substrate;

a plurality of insulating buffer layers formed on surfaces of the optical waveguide and of the substrate, and

means for applying an electric field which causes a radio frequency electric field onto said optical waveguide via said insulating buffer layer, said applying means including a first electrode arranged along said optical waveguide and a second electrode arranged in parallel to said first electrode,

wherein said insulating buffer layers include a first region formed between said first electrode and said optical waveguide having a width equal to or narrower than a width of the first electrode, and a second region formed between said second electrode and said substrate,

wherein the first and second electrodes are formed in such a shape and with such an interval distance therebetween as to establish a relation of C₀ =1/(c·

n₀ ·

Z₀) among a static capacitance C₀ of a time when said substrate, optical waveguide and insulating buffer layers are assumed not to exist, a refractive index n₀ of said optical waveguide against transmitting light, a velocity of light c, and a characteristic impedance Z₀ required between said first and second electrodes, and that said substrate, said optical waveguide and said insulating buffer layers are formed in such a form and arrangement of such a material as to substantially establish the relation of C=n₀ /(Z₀ ·

c) with the static capacitance C between said first and second electrodes.

2. The optical modulator as claimed in claim 1 wherein the second region has a width equal to or narrower than a width of the second electrode.

3. The optical modulator as claimed in claim 1 wherein if the substrate is a z-plate of LiNbO₃, the characteristic impedance is 50Ω

and the light of 1.55 μ

m wavelength band is transmitted through the optical waveguide, the relations below substantially hold,

space="preserve" listing-type="equation">C.sub.0 =3.12×

10.sup.-11 [F/m] (7)

space="preserve" listing-type="equation">C=1.42×

10.sup.-10 [F/m] (8)

4. The optical modulator as claimed in claim 3 wherein the relation expressed by the equation below holds among the width W of the first electrode, the thickness t₁ thereof, the interval distance G between said first and second electrodes expressed in the units of μ

m ##EQU6##

5. The optical modulator as claimed in claim 3 wherein the insulating buffer layers are made of SiO₂, a capacitance C_non-ins between the first and second electrodes when the insulating layers do not exist and the thickness t₂ of the buffer layers and the width W of the first electrode are expressed in the unit of μ

m respectively, satisfying the relation of ##EQU7## and a capacitance C_full-ins between the first and second electrodes if assumed that the insulating buffer layers are provided all over the surfaces of the substrate and the optical waveguide, satisfying the relation ##EQU8##

6. The optical modulator as claimed in claim 5 wherein the thickness t₂ of the insulating buffer layers has the relation with the width W of the first electrode as expressed below when thicknesses are expressed in units of μ

m;

space="preserve" listing-type="equation">0.0425W+0.09<

t.sub.2 <

0.183W+0.102.

7. The optical modulator of claim 1, wherein said optical waveguide is upon said substrate.

8. The optical modulator of claim 1, wherein said optical waveguide is within said substrate.