Single fault/tolerant MMIC switches

• US 5,061,911 A
• Filed: 04/03/1990
• Issued: 10/29/1991
• Est. Priority Date: 04/03/1990
• Status: Expired due to Term

• Current Assignee: Apple Inc.
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Weidman, John H., Yoshiyama, Glenn
• Primary Examiner(s): GENSLER, PAUL L
• Application Number:
  US07/503,597
• Time in Patent Office: 574 Days
• Field of Search: 333/103, 333/104, 333/262, 307/219, 307/571, 307/584
• US Class Current: 333/104
• CPC Class Codes: H01P 1/15 by semiconductor devices

Abstract

A single fault/tolerant monolithic microwave integrated circuit field effect transistor switching arrangement. This circuitry provides for the high speed (up to 18 GHz) switching of RF input signals while maintaining a circuit which is single fault/tolerant. That is, a single FET within the circuit may become faulty and the operation of the switching arrangement remains unaltered. The circuitry also provides for a self-terminating feature inherent in this FET switch.

Claims

1. A single fault/tolerant monolithic microwave integrated circuit (MMIC) for switching an RF input signal, said fault/tolerant MMIC comprising:

a plurality of field effect transistors (FETs) including at least first, second, third and fourth FETs, each said FETs having a gate input, a source input and a drain output;

said gate inputs of said first and second FETs being coupled together and said gate inputs operating in response to a source of a first logic level to control switching of said FET;

said source inputs of said first and second FETs being connected together and adapted to receive said RF input signal;

;

said drain outputs of said first and second FETs being connected together, said drain outputs of said first and second FETs each operating in response to a first logic level applied to said gate input to transmit said RF input signal whereby for a single fault of said first FET said signal FET remains operational to switch said RF input signal;

said gate inputs of said third and fourth FETs being connected to said gate inputs of said first and second FETs;

each of said first, second, third and fourth FETs include a FET having an on-resistance of approximately 50 ohms.

2. A single fault/tolerant MMIC as claimed in claim 1, wherein said gate inputs are connected to a source of a second logic level and said drain outputs of said first and second FETs provide a high impedance to said RF input signal.

3. A single fault/tolerant MMIC as claimed in claim 1, wherein said plurality of said FETs further includes:

said source inputs of said third and fourth FETs being connected in common, said drain outputs of said first and second FETs being connected to said common connection of said source inputs of said third and fourth FETs; and

said drain outputs of said third and fourth FETs being connected in common to a source of electronic ground.

4. A single fault/tolerant MMIC as claimed in claim 3, wherein said first, second, third and fourth FETs are fabricated on gallium arsenide semiconductor material.

5. A single fault/tolerant MMIC as claimed in claim 4, wherein said first, second, third and fourth gallium arsenide FETs transmit a signal in the frequency range up to 18 GHz.

6. A single fault/tolerant, single-pole, single-throw monolithic microwave integrated circuit (MMIC) field effect transistor (FET) switch comprising:

an RF source for providing an input RF signal;

first and second control leads for supplying first and second control signals respectively;

first single fault/tolerant FET means connected to said RF source, to said first control lead and to electronic ground, said first single fault/tolerant FET means operating in response to a first logic level of said first control lead to short circuit said input RF signal to the electronic ground, said first single fault/tolerant FET means operating in response to a second logic level of said first control lead to transmit said RF input signal;

second single fault/tolerant FET means connected to said first single fault/tolerant FET means, to said second control lead and to an RF output, said second single fault/tolerant FET means operating in response to said first logic level of said second control lead to transmit said input RF signal on said RF output lead, said second single fault/tolerant FET means alternately operating in response to said second logic level of said second control lead to inhibit transmission of said RF input signal on said RF output;

said first single fault/tolerant FET means including a plurality of first single fault/tolerant FETs having an on-resistance of approximately 50 ohms;

said second single fault/tolerant FET means including a plurality of second single fault/tolerant FETs having an on-resistance of approximately 50 ohms; and

said first and said second single fault/tolerant FETs being alternately connected between said RF source and said RF output, so that there are N first single fault/tolerant FET means alternately serially connected with N-1 of said second single fault/tolerant FET means.

7. A single fault/tolerant, single-pole, single-throw MMIC FET switch as claimed in claim 6, wherein each of said first single fault/tolerant FETs includes:

a plurality of FETs including at least a first, second, third and fourth FET, each said FET having a gate input, a source input and a drain output;

said gate input of said first and second FETs being connected together and said gate inputs operating in response to a first logic level of said first control lead to control switching of said first and second FETs;

said gate inputs of said third and fourth FETs being connected together and said gate inputs operating in response to a first logic level of said first control lead to control switching of said third and fourth FETs;

said source inputs of said first and second FETs being connected and adapted to receive said input RF signal;

said drain outputs of said first and second FETs being connected together;

said source inputs of said third and fourth FETs being connected in common and connected to said drain outputs of said first and second FETs; and

said drain outputs of said third and fourth FETs being connected in common and to a source of electronic ground, said drain outputs of said third and fourth FETs connecting said input RF input signal to electronic ground in response to a first logic level of said first control lead.

8. A single fault/tolerant, single-pole, single-throw MMIC FET switch as claimed in claim 6, wherein each of said second single fault/tolerant FETs includes:

a plurality of FETs including at least a first and second FET each said FET having a gate input, a source input and a drain output;

said gate inputs of said first and second FETs being connected in common and connected to a first control lead, said gate inputs operating to control switching of said first and second FETs respectively;

said source inputs of said first and second FETs being connected in common and adapted to receive said input RF signal; and

said drain outputs of said first and second FETs being connected in common, said drain outputs of said first and second FETs each operating in response to a first logic level of said second control lead to transmit said RF input signal whereby for a single fault of said first FET, said second FET remains operational to switch RF input signal.

9. A single fault/tolerant, single-pole, double-throw MMIC FET switch comprising:

an RF source of an RF input signal;

first and second control leads for providing first and second control signals respectively;

first and second RF outputs, one of said first and second outputs selectively transmitting said RF input signal;

first single fault/tolerant FET switching means connected to said RF source, to said second RF output and to said first and second control leads, said first single fault/tolerant FET switching means operating in response to a first logic level of said second control lead and a second logic level of said first control lead to provide said RF input signal at said second RF output;

second single fault/tolerant FET switching means connected to said RF source, said first RF output and to said first and second control leads, said second single fault/tolerant FET switching means operating in response to a first logic level of said first control lead and a second logic level of said second control lead to provide said RF input signal at said first RF output; and

said first single fault/tolerant FET switching means including first and second pluralities of first single fault/tolerant FETs, each having an on-resistance of approximately 50 ohms; and

said second single fault/tolerant FET switching means including first and second pluralities of second single fault/tolerant FETs, each having an on-resistance of approximately 50 ohms;

said first plurality of first single fault/tolerant FETs including;

first FET switching means connected to said RF source and to said second control lead;

said second plurality of first single fault/tolerant FETs including;

second FET switching means connected to said first FET switching means, to said first control lead and to the electronic ground; and

said first plurality of first single fault/tolerant FETs further including;

third FET switching means connected to said first and second FET switching means, to said second RF output and to said second control lead.

10. A single-pole double-throw MMIC FET switch as claimed in claim 9 said first plurality of second single fault/tolerant FETs including:

fourth FET switching means connected to said RF source and to said first control lead;

said second plurality of second single fault/tolerant FETs including;

fifth FET switching means connected to said fourth FET switching means, to the electronic ground and to said second control lead; and

said first plurality of second single fault/tolerant FETs further including;

sixth FET switching means connected to said fourth and fifth FET switching means, to said first RF output and to said first control lead.

11. A single-pole, double-throw MMIC FET switch as claimed in claim 10, wherein said third and sixth FET switching means each includes:

a plurality of FETs including at least a first and a second FET, each said FET having a gate input, a source input and drain output;

said gate inputs of said first and second FETs being connected together and said gate inputs operating to control switching of said first and second FETs;

said source input of said first and second FETs being connected together and adapted to receive said RF input signal; and

said drain outputs of said first and second FETs being connected together said drain outputs of said first and second FETs each operating in response to said first logic level of said first control lead to transmit said RF input signal whereby for a single fault of said first FET, said second FET remains operational to switch said RF input signal.

12. A single-pole, double-throw MMIC FET switch as claimed in claim 10 said first and fourth FETs switching means including:

a plurality of FETs including at least a first, second, third and fourth FET, each said FET having a gate input, a source input and a drain output;

said gate input of said first and second FETs being connected together and said gate inputs operating to control switching of said first and second FETs;

said gate inputs of said third and fourth FETs being connected together and said gate inputs operating to control switching of said third and fourth FETs;

said source inputs of said first and second FETs being connected together and adapted to receive said RF input signal;

said drain outputs of said first and second FETs being connected together;

said source inputs of said third and fourth FETs being connected in common and connected to said drain outputs of said first and second FETs; and

said drain outputs of said third and fourth FETs being connected in common, said drain outputs of said third and fourth FETs transmitting said RF input signal in response to a first logic level of said first and second control leads.

13. A single-pole, double-throw MMIC FET switch as claimed in claim 10, wherein said second and fifth FET switching means including:

a plurality of FETs including at least a first, second, third and fourth FET, each said FET having a gate input, a source input and a drain output;

said gate input of said first and second FETs being connected together and said gate inputs operating to control switching of said first and second FETs;

said gate inputs of said third and fourth FETs being connected together and said gate inputs operating to control switching of said third and fourth FETs;

said source inputs of said first and second FETs being connected together and adapted to receive said RF input signal;

said drain outputs of said first and second FETs being connected together;

said source inputs of said third and fourth FETs being connected in common and connected to said drain outputs of said first and second FETs;

said drain outputs of said third and fourth FETs of said second FET switching means being connected in common and to a source of electronic ground, said drain outputs of said third and fourth FETs of said second FET switching means for connecting said RF input signal to electronic ground in response to a first logic level of said first control lead; and

said drain outputs of said third and fourth FETs of said fifth FET switching means being connected in common and to a source of electronic ground, said drain outputs of said third and fourth FETs of said fifth FET switching means for connecting said RF input signal to electronic ground in response to a first logic level of said second control lead.