FET electrode with carbon gate

• US 5,061,976 A
• Filed: 04/19/1991
• Issued: 10/29/1991
• Est. Priority Date: 11/20/1986
• Status: Expired due to Term

• Current Assignee: Terumo Kabushiki Kaisha (Terumo Corporation)
• Original Assignee: Terumo Kabushiki Kaisha (Terumo Corporation)
• Inventors: Yamaguchi, Shuichiro, Shimomura, Takeshi, Suzuki, Takanao, Oyama, Noboru
• Primary Examiner(s): MINTEL, WILLIAM A
• Application Number:
  US07/687,214
• Time in Patent Office: 193 Days
• Field of Search: 357/23.15, 357/25, 357/23.7, 357/8, 204/418, 204/416
• US Class Current: 257/414
• CPC Class Codes: G01N 27/414 Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS

Abstract

The surface of a gate insulating membrane of an ion-selective field-effect transistor (ISFET) (10) is coated with a carbon thin membrane (4), and the surface of the latter is coated with an electrolytic polmerization membrane (3) of 2,6 xylenol. The ISFET obtained exhibits hydrogen-ion selectivity, little drift, high stability and little response to light. If the surface of the electrolytic polmerization membrane (3) of 2,6 xylenol is coated with another ion-selective membrane or enzyme-active membrane, various ions and the concentration of a biological substrate can be measured.

Claims

1. A FET device comprising:

a FET having a source, a drain, a channel for linking between the source and the drain and a gate for controlling current flow in the channel by field effect,

an insulator over said channel of said FET, a carbon membrane coating said insulator and forming said gate, and

an organic membrane formed on a surface of said carbon membrane by an electrolytic oxidative polymerization process.

2. The FET device according to claim 1, wherein said carbon membrane possesses, in part, a multi-surfaced structure, and the specific resistance is less than 10 Ω

cm following application of the carbon membrane.

3. The FET device according to claim 1, wherein said organic membrane is a membrane which manifests an oxidation-reduction response.

4. The FET device according to claim 1, further comprising and ion-carrier membrane coating said organic membrane.

5. The FET device according to claim 1, further comprising an oxygen-active membrane coating said organic membrane.

6. The FET device according to claim 1, wherein said carbon membrane is further extended from said FET, and said organic membrane is formed on a surface of said extended carbon membrane.

7. A FET device comprising

a FET having a source, a drain, a channel for linking between the source and the drain and a gate for controlling current flow in the channel by field effect, one of the source and the drain surrounding the other;

an insulator over said channel of said FET;

a carbon membrane coating a portion of said insulator far from both electrodes of the source and the drain and forming said gate; and

an organic membrane formed on a surface of said carbon membrane by an electrolytic oxidative polymerization process.

8. The FET device of claim 7, wherein said carbon membrane possesses, in part, a multi-surfaces structure, and the specific resistance is less than 10 Ω

cm following application of the carbon membrane.

9. The FET device of claim 7, wherein said organic membrane is a membrane which manifests an oxidation-reduction response.

10. The FET device of claim 7, further comprising an ion-carrier membrane coating said organic membrane.

11. The FET device of claim 7, further comprising an oxygen-active membrane coating said organic membrane.