SiC based artificial dental implant

• US 5,062,798 A
• Filed: 04/26/1989
• Issued: 11/05/1991
• Est. Priority Date: 04/27/1988
• Status: Expired due to Fees

• Current Assignee: NGK Spark PLUG Company Limited
• Original Assignee: NGK Spark PLUG Company Limited
• Inventors: Tsuge, Kazuto, Kondo, Kazuo, Hattori, Masateru, Shibata, Yoshimasa
• Primary Examiner(s): Wilson, John J.
• Application Number:
  US07/343,207
• Time in Patent Office: 923 Days
• Field of Search: 433/201.1, 433/173
• US Class Current: 433/201.1
• CPC Class Codes: A61C 8/0012 characterised by the material or composition, e.g. ceramics, surface layer, metal alloy use of specific materials A61K6/00

Abstract

An artificial radix dentis comprises a prong portion buried in an alveolar bone, which is made of a SiC-based ceramic material or is covered with a SiC-based film.

Claims

1. An artificial radix dentis comprising a first portion adapted to be buried in an alveolar bone and a second portion adapted to contact a gingiva, wherein at least an outermost layer of said first portion consists essentially of a SiC-based ceramic material.

2. An artificial radix dentis according to claim 1, wherein said second portion is covered with a first layer made of a phosphate glass, and wherein said first layer is covered with a second layer made of a calcium phosphate type ceramic material.

3. An artificial radix dentis according to claim 1, wherein said SiC-based ceramic material contains SiC in an amount of at least 90% of the total weight of said ceramic material.

4. An artificial radix dentis according to claim 1, wherein said SiC-based ceramic material has an average crystal grain size of 1-5μ

m and a porosity of 0-10%.

5. An artificial radix dentis comprising a prong portion adapted to be buried in a bone, wherein said prong is covered with a film consisting essentially of SiC.

6. An artificial radix dentis according to claim 5, wherein said SiC-based film is formed by a chemical vaporphase deposition process.

7. The artificial radix dentis of claim 5, wherein said film is at least 95% by weight SiC.