Method for manufacturing a planar electrical interconnection utilizing isotropic deposition of conductive material

• US 5,063,175 A
• Filed: 12/16/1988
• Issued: 11/05/1991
• Est. Priority Date: 09/30/1986
• Status: Expired due to Term

• Current Assignee: NXP B.V. (NXP Semiconductors NV)
• Original Assignee: North American Philips Corporation Signetics Division (Koninklijke Philips N.V.)
• Inventors: Broadbent, Eliot K.
• Primary Examiner(s): Hearn, Brian E.
• Assistant Examiner(s): Holtzman, Laura
• Application Number:
  US07/287,582
• Time in Patent Office: 1,054 Days
• Field of Search: 437/192
• US Class Current: 438/626
• CPC Class Codes: H01L 21/28512 on semiconductor bodies comprising elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 21/7684 Smoothing; Planarisation
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric
• CPC Class Codes: H01L 21/76876 for deposition from the gas phase, e.g. CVD
• CPC Class Codes: H01L 21/76877 Filling of holes, grooves or trenches, e.g. vias, with conductive material

Abstract

A planar electrical interconnection system suitable for an integrated circuit is created by a process in which an insulating layer (31) having a planar upper surface is formed on a substructure after which openings (32) are etched through the insulating layer. A conductive planarizing layer (33) having a planar upper surface is formed on the insulating layer and in the openings by an operation involving isotropic deposition of a material, preferably tungsten, to create at least a portion of the planarizing layer extending from its upper surface partway into the openings. The planarizing layer is then etched down to the insulating layer. Consequently, its upper surface is coplanar with that of the material (33'"'"') in the openings. The foregoing steps are repeated to create another coplanar conductive/insulating layer (34 and 36'"'"'). If the lower openings are vias while the upper openings are grooves, the result is a planar interconnect level. Further planar interconnect levels can be formed in the same way.

Claims

1. A method wherein a first electrically insulating layer having a largely planar upper surface is formed on a substructure, and first openings are etched through the first insulating layer down to the substructure, characterized by the steps of:

forming a first electrically conductive planarizing layer having a largely planar upper surface on the first insulating layer and in the first openings by an operation in which tungsten or molybdenum is isotropically deposited to create at least a portion of the first planarizing layer extending from its upper surface partway into the first openings;

removing a relatively uniform thickness of the first planarizing layer down to the upper surface of the first insulating layer;

forming a second electrically insulating layer having a largely planar upper surface on the first insulating layer and on the material in the first openings;

etching second openings through the second insulating layer down to the material in the first openings;

forming a second electrically conductive planarizing layer having a largely planar upper surface on the second insulating layer and in the second openings by an operation in which tungsten or molybdenum is isotropically deposited to create at least a portion of the second planarizing layer extending from its upper surface partway into the second openings; and

removing selected material of the second planarizing layer so as to leave the remainder of the second planarizing layer in a desired pattern;

where each isotropic deposition entails providing tungsten or molybdenum from a species in a vapor by a surface-controlled chemical reaction in the immediate vicinity of where the tungsten or molybdenum accumulates.

2. A method as in claim 1 characterized in that the step of removing selected material entails removing a relatively uniform thickness of the second planarizing layer down to the upper surface of the second insulating layer.

3. A method as in claim 2 characterized in that each first opening is one of a via and a groove, and each second opening is the other of a via and a groove, where each via has approximately equal length and width, and each groove has much greater length than width.

4. A method as in claim 3 characterized in that:

each opening has nearly vertical sidewalls; and

at least one of the openings has an aspect ratio of 2 or more and a minimum lateral dimension of 1 micron or less.

5. A method as in claim 4 characterized in that material of the first and second planarizing layers respectively fills the first and second openings in a substantially void-free manner.

6. A method as in claim 1, 3, or 5 characterized in that the species in each isotropic deposition is tungsten hexafluoride, the vapor being substantially silane free.

7. A method in which an electrically insulating layer having a largely planar upper surface is formed on a substructure, and first openings are etched through the first insulating layer down to the substructure, characterized by the steps of:

forming a first planarizing layer by (1) creating a first lower layer on the first insulating layer and in the first openings, the first lower layer comprising electrically conductive material that adheres to the first insulating layer, adheres to the material exposed through the first openings, and acts as a nucleation surface for tungsten, and (2) isotropically depositing a sufficient amount of tungsten on the first lower layer to form a much thicker first upper layer having a largely planar upper surface;

removing a relatively uniform thickness of the first planarizing layer down to the upper surface of the first insulating layer;

forming a second electrically insulating layer having a largely planar upper surface on the first insulating layer and on the material in the first openings;

etching second openings through the second insulating layer down to the material in the first openings;

forming a second planarizing layer by (1) creating a second lower layer on the second insulating layer and in the second openings, the second lower layer comprising electrically conductive material that adheres to the second insulating layer, adheres to the material exposed through the second openings, and acts as a nucleation surface for tungsten, and (2) isotropically depositing a sufficient amount of tungsten on the second lower layer to form a much thicker second upper layer having a largely planar upper surface; and

removing a relatively uniform thickness of the second planarizing layer down to the upper surface of the second insulating layer.

8. A method as in claim 7 characterized by the steps of:

forming a third electrically insulating layer having a largely planar upper surface on the second insulating layer and on the material in the second openings;

etching third openings through the third insulating layer down to the material in the second openings;

forming a third planarizing layer by (1) creating a third lower layer on the third insulating layer and in the third openings, the third lower layer comprising electrically conductive material that adheres to the third insulating layer, adheres to the material exposed through the third openings, and acts as a nucleation surface for tungsten, and (2) isotropically depositing a sufficient amount of tungsten on the third lower layer to form a much thicker third upper layer having a largely planar upper surface; and

removing a relatively uniform thickness of the third planarizing layer down to the upper surface of the third insulating layer.

9. A method as in claim 8 characterized by the steps of:

forming a fourth electrically insulating layer having a largely planar upper surface on the third insulating layer and on the material in the third openings;

etching fourth openings through the fourth insulating layer down to the material in the third openings;

forming a fourth planarizing layer by (1) creating a fourth lower layer on the fourth insulating layer and in the fourth openings, the fourth lower layer comprising electrically conductive material that adheres to the fourth insulating layer, adheres to the material exposed through the fourth openings, and acts as a nucleation surface for tungsten, and (2) isotropically depositing a sufficient amount of tungsten on the fourth lower layer to form a much thicker fourth upper layer having a largely planar upper surface; and

removing a relatively uniform thickness of the fourth planarizing layer down to the upper surface of the fourth insulating layer.

10. A method as in claim 9 characterized in that:

each of the first and third openings is a via whose length and width are approximately the same; and

each of the second and fourth openings is a groove having much greater length than width.

11. A method as in claim 7 characterized by the steps of:

forming a third eletrically insulating layer having a largely planar upper surface on the second insulating layer and on the material in the second openings;

etching third openings through the third insulating layer down to the material in the second openings;

forming a third planarizing layer by (1) creating a third lower layer on the third insulating layer and in the third openings, the third lower layer comprising electrically conductive material that adheres to the third insulating layer, adheres to the material exposed through the third openings, and acts as a nucleation surface for tungsten, and (2) isotropically depositing a sufficient amount of tungsten on the third lower layer to form a much thicker third upper layer having a largely planar upper surface; and

selectively removing portions of the third planarizing layer down to the upper surface of the third insulating layer.

12. A method as in claim 8 characterized by the steps of:

depositing an electrically conductive blanket layer on the third insulating layer and on the material in the third openings; and

selectively removing portions of the blanket layer down to the upper surface of the third insulating layer.

13. A method as in claim 11 or 12 characterized in that:

each first opening is a via whose length and width are approximately the same; and

each second opening is a groove having much greater length than width.

14. A method as in claim 7 characterized in that:

each opening has nearly vertical sidewalls; and

at least one of the openings has an aspect ratio of 2 or more.

15. A method as in claim 7 characterized in that:

the average angle between the upper surface of each insulating layer and the sidewalls of each opening through that insulating layer is no less than 90°

;

at least one of the openings has an aspect ratio greater than 1; and

each planarizing layer is substantially void-free.

16. A method as in claim 7, 9, 11, or 12 characterized in that each isotropic deposition entails providing tungsten from a species in a vapor by a surface-controlled chemical reaction in the immediate vicinity of where the tungsten deposits.

17. A method as in claim 16 characterized in that the species is tungsten hexafluoride, the vapor being substantially silane free.

18. A method as in claim 7 characterized in that the creation of each lower layer entails:

forming a first sublayer that adheres to the underlying insulating layer and to the material exposed through its openings; and

subsequently forming a second sublayer that adheres to the first sublayer and acts as a nucleation surface for tungsten.

19. A method as in claim 18 characterized in that:

the steps of forming the first and second sublayers respectively comprise physically depositing titanium and tungsten; and

the vapor in each isotropic deposition includes tungsten hexafluoride as the species, the vapor being substantially silane free.

20. A method as in claim 7 characterized in that each step of removing comprises etching the associated planarizing layer starting with its upper surface substantially fully exposed.

21. A method as in claim 7 characterized in that each step of removing comprises:

forming on the associated planarizing layer a further layer whose upper surface is more planar than the upper surface of that planarizing layer;

removing the further layer and upward-protruding parts of that planarizing layer with etchant that attacks material of the further layer and that planarizing layer at rates not substantially different from each other; and

removing further material of that planarizing layer down to the upper surface of the underlying insulating layer.

22. A method in which an electrically insulating layer having a largely planar upper surface is formed on a substructure, and first openings are etched through the first insulating layer down to the substructure, each first opening being a via whose length and width are approximately the same, characterized by the steps of:

forming a substantially void-free first planarizing layer by (1) creating a first lower layer on the first insulating layer and in the first openings, the first lower layer consisting substantially of electrically conductive material that adheres to the first insulating layer, adheres to the material exposed through the first openings, and acts as a tungsten nucleation surface, and (2) isotropically depositing tungsten on the first lower layer to form a much thicker first upper layer having a largely planar upper surface;

removing a relatively uniform thickness of the first planarizing layer down to the upper surface of the first insulating layer;

forming a second electrically insulating layer having a largely planar upper surface on the first insulating layer and on the material in the first openings;

etching second openings through the second insulating layer down to the material in the first openings, each second opening being a groove having much greater length than width;

forming a substantially void-free second planarizing layer by (1) creating a second lower layer on the second insulating layer and in the second openings, the second lower layer consisting substantially of electrically conductive material that adheres to the second insulating layer, adheres to the material exposed through the second openings, and acts as a tungsten nucleation surface, and (2) isotropically depositing tungsten on the second lower layer to form a much thicker second upper layer having a largely planar upper surface; and

removing a relatively uniform thickness of the second planarizing layer down to the upper surface of the second insulating layer;

where each isotropic deposition entails providing tungsten from a species in a vapor by a surface-controlled chemical reaction in the immediate vicinity of where the tungsten accumulates.

23. A method as in claim 22 characterized in that:

each opening has nearly vertical sidewalls; and

at least one of the openings has an aspect ratio of 2 or more and a minimum lateral dimension of 1 micron or less.

24. A method as in claim 22 or 23 characterized in that the vapor in each isotropic deposition includes tungsten hexafluoride as the species, the vapor being substantially silane free.

25. A method wherein an electrically insulating layer having a largely planar upper surface is formed on a substructure, and openings are etched through the insulating layer down to the substructure, characterized by the steps of:

forming a continuous electrically conductive layer by (1) creating a lower layer over the insulating layer and in the openings, the lower layer consisting substantially of electrically conductive material that adheres to the insulating layer, adheres to the material exposed through the openings, and acts as a tungsten nucleation surface, and (2) creating a much thicker upper layer of tungsten over the lower layer by an operation in which tungsten is isotropically deposited from a species in a vapor by a surface-controlled chemical reaction in the immediate vicinity of where the tungsten accumulates, material of the continuous layer filling the openings in a substantially void-free manner; and

removing material of the continuous layer down to the upper surface of the insulating layer.

26. A method as in claim 25 characterized in that:

each opening has nearly vertical sidewalls; and

at least one of the openings has an aspect ratio of 2 or more and a minimum lateral dimension of 1 micron or less.

27. A method as in claim 26 characterized in that the vapor comprises (1) tungsten hexafluoride as the species and (2) hydrogen for reducing the tungsten hexafluoride, the vapor being substantially silane free.

28. A method as in claim 25 characterized in that the creation of the lower layer entails:

forming a first sublayer that adheres to the insulating layer and to the material exposed through the openings; and

subsequently forming a second sublayer that adheres to the first sublayer and acts as a tungsten nucleation surface.

29. A method as in claim 28 characterized in that:

the steps of depositing the first and second sublayers respectively comprise physically depositing titanium and tungsten;

the species is tungsten hexafluoride; and

the vapor is substantially silane free.

30. A method as in claim 25 characterized in that the continuous layer has a largely planar upper surface.