×

Insulated gate transistor devices with temperature and current sensor

  • US 5,063,307 A
  • Filed: 09/20/1990
  • Issued: 11/05/1991
  • Est. Priority Date: 09/20/1990
  • Status: Expired due to Term
First Claim
Patent Images

1. A semiconductor device in combination with temperature sensing circuitry comprising:

  • a first insulated gate transistor having a first drain node, a first gate node, and a first source node;

    a second insulated gate transistor, monolithic with and much smaller than said first transistor, having a second drain node, a second gate node, and a second source node;

    said first and second drain nodes having a common connection;

    a resistor coupled between said first and second source nodes;

    means defining a reference voltage; and

    an operational amplifier having a first input terminal coupled to said reference voltage, a second complementary input terminal coupled to said second source node, and an output terminal coupled to said second gate node;

    whereupon when current flows from said second drain node, through said second gate insulated transistor, through said resistor, and to said second source node, the voltage appearing at said second gate terminal provides a direct measure of the temperature of said second insulated gate transistor.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×