Conical gas inlet for thermal processing furnace

• US 5,064,367 A
• Filed: 08/06/1990
• Issued: 11/12/1991
• Est. Priority Date: 06/28/1989
• Status: Expired due to Term

• Current Assignee: Hewlett-Packard Development Company, L.P. (HP Inc.)
• Original Assignee: Digital Equipment Corporation (HP Inc.)
• Inventors: Philipossian, Ara
• Primary Examiner(s): Bennett, Henry A.
• Assistant Examiner(s): Kilner, Christopher B.
• Application Number:
  US07/563,937
• Time in Patent Office: 463 Days
• Field of Search: 432/5, 432/6, 432/11, 432/152, 432/253, 432/72, 432/2, 432/99, 118/715, 118/725, 156/345
• US Class Current: 432/253
• CPC Class Codes: C30B 31/16 Feed and outlet means for the gases; Modifying the flow of the gases
• CPC Class Codes: F27B 17/0025 Especially adapted for treating semiconductor wafers

Abstract

A tube furnace used for high-temperature processing of semiconductor wafers or the like employs a cone-like shape for the gas inlet or nozzle where the reactant or insert gas enters the furnace tube. This conical nozzle produces a gas flow of faster velocities, following the flow streamlines, and avoids or minimizes recirculating gas cells. The amount of gas used in purging a tube with this configuration is reduced, and the time needed for thorough purging is also reduced. Greater process control, and enhanced process reproducibility, are also possible because of the reduction in overlap of process steps permitted by the faster purging. This feature of faster purging can, in addition, reduce the infiltration of ambient air which occurs during any processing step.

Claims

1. A thermal processing furnace, comprising:

a) a furnace tube having an elongated cylindrical heated chamber open at one end for receiving a cylindrical cantilever tube containing a plurality of axially-aligned, spaced-apart semiconductor wafers to be processed;

b) an inlet for introducing reactant and/or inert gasses into the other end of said cylindrical chamber for directing said gasses into an open end of said cantilever tube to flow axially within said cantilever tube by said wafers to the other end of said cantilever tube, said inlet including a substantially cone-shaped portion to provide a smooth transition from the diameter of said inlet to the diameter of said furnace tube to thereby minimize recirculating gas cells adjacent said inlet, wherein said cone-shaped portion has an axial length greater than the diameter of said furnace tube;

c) an outlet for removing said gasses from said one end of said cylindrical cantilever tube including a plurality of circumferentially-spaced openings in the cantilever tube and an exhaust chamber surrounding said openings, the exhaust chamber including a plurality of circumferentially-spaced exhaust ports; and

a gas inlet surrounding said one end of the cylindrical chamber and having a plurality of inwardly-directed gas jets for providing a gas curtain protecting said one end when said cantilever tube is not within said cylindrical chamber.

2. Apparatus according to claim 1 wherein said furnace tube includes a cylindrical furnace quartz tube, and said inlet is an integral part of said furnace tube.

3. Apparatus according to claim 1 wherein said furnace tube has a cylindrical shape of substantially constant exterior diameter extending from said one end to about the position of said inlet.

4. A furnace for performing high-temperature processes upon a plurality of semiconductor wafers, comprising:

a) a furnace tube having an elongated cylindrical heated chamber open at one end for receiving said plurality of semiconductor wafers;

b) cantilever means for supporting said plurality of semiconductor wafers, said cantilever means including a cylindrical tube for enclosing said semiconductor wafers in axial alignment with and spaced apart from one another, said cantilever means including support means at an outer end for axial movement into said chamber for performing said processes and out of said chamber for loading and unloading said semiconductor wafers;

c) an inlet for introducing reactant and/or inert gasses into the other end of said cylindrical chamber, said inlet including a substantially cone-shaped portion to provide a smooth transition from the diameter of said inlet to the diameter of said tube furnace to thereby minimize re-circulating gas cells in an area adjacent said other end, wherein said cone-shaped portion has an axial length greater than the diameter of said furnace tube, the gasses flowing from said inlet into an open end of said cylindrical tube to flow within said cylindrical tube along the length thereof by said plurality of wafers to the other end of said cylindrical tube;

d) an outlet for removing said gasses from said one end of said cylindrical tube including a plurality of circumferentially-spaced openings in the cylindrical tube and an exhaust chamber surrounding said openings, the exhaust chamber including a plurality of circumferentially-spaced exhaust ports; and

a gas inlet surrounding said one end of the cylindrical chamber and having a plurality of inwardly-directed gas jets for providing a gas curtain protecting said one end when said cantilever means is out of said cylindrical chamber.

5. Apparatus according to claim 4 wherein said furnace tube includes a cylindrical quartz tube, and said inlet is an integral part of said furnace tube.

6. Apparatus according to claim 4 wherein said furnace tube has a cylindrical shape of substantially constant exterior diameter extending from said one end to beyond the position where said inlet joins the interior wall of said furnace tube.

7. A method of operating a thermal processing furnace, comprising the steps of:

a) loading a plurality of axially-spaced articles to be processed within a cantilever tube into one end of a horizontal furnace tube;

b) introducing reactant and/or inert gasses by an inlet into the other end of said furnace tube to flow by said articles to said one end axially within said cantilever tube, wherein said inlet includes a cone-shaped portion having an axial length greater than the diameter of said furnace tube;

c) flowing said gasses from said inlet to said furnace tube through said inlet of gradually increasing diameter to minimize formation of stagnant gas cells adjacent said other end resulting from said step of introducing;

d) removing said gasses from said one end of said cantilever tube by a plurality of circumferentially-spaced openings in the cantilever tube and an exhaust chamber surrounding said openings, the exhaust chamber including a plurality of circumferentially-spaced exhaust ports; and

providing a gas curtain protecting said one end when said cantilever tube is not within said furnace tube by a gas inlet surrounding said one end of the furnace tube and having a plurality of inwardly-directed gas jets.

8. A method according to claim 7 wherein said furnace tube includes a cylindrical quartz tube, and said inlet is an integral part of said furnace tube.

9. A method according to claim 7 wherein said furnace tube has a cylindrical shape of substantially constant exterior diameter extending from said one end to about the position of said inlet.

10. A method of operating a cantilever-type tube furnace for performing high-temperature processes upon a plurality of axially-aligned and spaced-apart semiconductor wafers, comprising the steps of:

a) loading said plurality of axially-aligned, spaced-apart semiconductor wafers into a tubular cantilever, and supporting said tubular cantilever at an outer end for axial movement into one end of a tube furnace from a loading position spaced from said tube furnace to an operating position within said tube furnace for performing said processes;

c) introducing reactant and/or inert gasses by an inlet into the other end of said tube furnace while said cantilever tube is in said operating position, wherein said inlet includes a cone-shaped portion having an axial length greater than the diameter of said tube furnace;

d) flowing said gasses from said inlet to said tube furnace through said cone-shaped portion of gradually increasing diameter to minimize formation of stagnant gas cells and eddies adjacent said inlet resulting from said step of introducing, said gasses flowing from said inlet into an open end of said tubular cantilever to flow axially within the tubular cantilever by said wafers to the other end of said tubular cantilever;

d) removing said gasses from said one end of said tubular cantilever by a plurality of circumferentially-spaced openings in the tubular cantilever and an exhaust chamber surrounding said openings, the exhaust chamber including a plurality of circumferentially-spaced exhaust ports; and

providing a gas curtain protecting said one end when said tubular cantilever is spaced from said tube furnace by a gas inlet surrounding said one end of the tube furnace and having a plurality of inwardly-directed gas jets.

11. A method according to claim 10 wherein said tube furnace includes a cylindrical quartz tube, and said inlet is an integral part of said tube furnace.

12. A method according to claim 10 wherein said tube furnace has a cylindrical shape of substantially constant exterior diameter extending from said one end to about the position of said inlet.