Reference electrode, ion sensor and method of manufacturing the same

• US 5,066,383 A
• Filed: 10/26/1989
• Issued: 11/19/1991
• Est. Priority Date: 10/27/1988
• Status: Expired due to Term

• Current Assignee: Terumo Kabushiki Kaisha
• Original Assignee: Terumo Kabushiki Kaisha
• Inventors: Yamaguchi, Shuichiro, Uchida, Naoto, Shimomura, Takeshi, Oyama, Noboru, Katsube, Teruaki
• Primary Examiner(s): Niebling, John F.
• Assistant Examiner(s): BELL, BRUCE F
• Application Number:
  US07/426,713
• Time in Patent Office: 754 Days
• Field of Search: 204/435, 204/192.14, 204/192.15, 204/192.11, 357/25
• US Class Current: 204/435
• CPC Class Codes: G01N 27/301 Reference electrodes
• CPC Class Codes: G01N 27/414 Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS

Abstract

A reference electrode for generating a reference potential on an ion sensor is disclosed. The reference electrode has a lamination film covering a surface of an electrically conductive substrate and formed by alternately laminating silver halide thin films and hydrophobic resin thin films.

Claims

1. A reference electrode comprising:

an electrically conductive substrate;

a first film made up of at least two layers provided on a surface of said substrate and including a silver halide layer and a hydrophobic resin layer; and

a second film made up of at least two layers provided on a surface of said first film and including a hydrophobic resin layer and a salt layer.

2. The reference electrode according to claim 1, wherein said second film is formed by alternately laminating silver halide layers and hydrophobic resin layers.

3. The reference electrode according to claim 1, wherein at least one salt layer in said second film contains a salt other than silver halide.

4. The reference electrode according to claim 1 wherein at least one salt layer in said second film is a silver halide layer and at least one silver halide layer contains a salt other than silver halide.

5. The reference electrode according to claim 3 or 4, wherein said salt is a halide salt.

6. The reference electrode according to claim 3 or 4, wherein said salt is a salt other than any halide salt.

7. The reference electrode according to claim 1, wherein a mixture film consisting of a mixture of silver halide, a halide salt and a hydrophobic resin is formed on a surface of said second film.

11. The reference electrode according to claim 1, wherein said electrically conductive substrate is made of silver or is a substrate obtained by forming a silver layer on a surface of an insulator.

12. The reference electrode according to claim 1, which comprises a silver halide layer of a member of a group consisting of silver chloride, silver bromide, silver iodide and silver fluoride.

8. A reference electrode comprising:

an electrically conductive substrate;

a lamination layer provided on a surface of the substrate and formed by alternately laminating silver halide layers and hydrophobic resin layers; and

a mixture film provided on a surface of said lamination layer and consisting of a mixture of silver halide, a halide salt and a hydrophobic resin.

9. A reference electrode comprising an electrically conductive substrate and a lamination film provided on a surface of said substrate and formed by alternately laminating halide salt layers containing an oxidizer and hydrophobic resin layers.

10. The reference electrode according to claim 9, wherein said halide salt layers further contain silver halide.

13. A reference electrode comprising an electrically insulating substrate and a lamination film including a silver halide layer formed by a deposition process on said substrate and a hydrophobic resin layer formed by a neutral beam sputtering process on said silver halide layer.

14. A reference electrode comprising a gate insulation film of a field-effect transistor and a lamination film including a silver halide layer formed by a neutral beam sputtering process on a surface of said gate insulation film and a hydrophobic resin layer formed by a neutral beam sputtering process on said silver halide layer.

15. A method of manufacturing a reference electrode comprising a step of forming targets of silver halide and a hydrophobic resin on a predetermined substrate surface and a step of sputtering said targets by projecting a neutral beam onto said halide and hydrophobic resin alternately, thereby forming a lamination film consisting of a silver halide layer and a hydrophobic resin layer on the substrate surface.

16. A reference electrode according to claim 15 wherein the deposition process is a neutral beam sputtering process.

17. A reference electrode comprising:

an electrically conductive substrate;

a first film made up of at least two layers provided on a surface of a gate insulation film of a field-effect transistor and including a silver halide layer and a hydrophobic resin layer; and

a second film made up of at least two layers provided on a surface of said first layer and including a hydrophobic resin layer and a salt layer.

18. A reference electrode comprising:

an electrically conductive substrate;

a first film made up of at least two layers formed via a film layer of silver on a surface of a gate insulation film of a field-effect transistor and including a silver halide layer and a hydrophobic resin layer; and

a second film provided on a surface of said first film and including a hydrophobic resin layer and a salt layer.