Resistor under wirebond pad

• US 5,066,999 A
• Filed: 10/23/1989
• Issued: 11/19/1991
• Est. Priority Date: 10/23/1989
• Status: Expired due to Term

• Current Assignee: Micron Semiconductor, Inc. (Micron Technology, Inc.)
• Original Assignee: Micron Technology, Inc.
• Inventors: Casper, Stephen L.
• Primary Examiner(s): Laroche, Eugene R.
• Assistant Examiner(s): RATLIFF, REGINALD A
• Application Number:
  US07/425,675
• Time in Patent Office: 757 Days
• Field of Search: 357/51, 357/71, 357/23.13
• US Class Current: 257/786
• CPC Class Codes: H01L 27/0288 using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps
• CPC Class Codes: H01L 27/0802 Resistors only

Abstract

A preferred embodiment of the invention is a poly input resistor located underneath, rather than alongside, an IC wirebond pad. This offers the advantages of a more efficient layout, more contacts connecting the pad to the resistor, a better contact configuration, and a larger, higher current resistor.

Claims

1. IC apparatus comprising:

(a) a semiconductor substrate, having active circuitry formed thereon;

(b) a resistor including a layer of polysilicon disposed over said substrate;

(c) a wirebond pad, said wirebond pad being remote from said active circuitry;

(d) a first group of contacts, contacting said wirebond pad to said resistor; and

(e) a second group of contacts, contacting said resistor to other circuitry located on said substrate;

wherein said wirebond pad is disposed over a portion of said resistor.

2. The apparatus of claim 1, wherein said polysilicon is doped to a predetermined level.

3. The apparatus of claim 1, wherein said first and second groups of contacts are each arranged in a line perpendicular to a direction of current flow in said resistor, and said first group of contacts is located near an edge of said wirebond pad.

4. IC apparatus comprising:

(a) a semiconductor substrate of a first conductivity type;

(b) a resistor including a well of a second conductivity type in said substrate;

(c) a wirebond pad;

(d) a first group of contacts, contacting said wirebond pad to said resistor; and

(e) a second group of contacts, contacting said resistor to other circuitry located on said substrate;

wherein said wirebond pad is disposed over a portion of said resistor.

5. The apparatus of claim 4, wherein said first conductivity type is p and said second conductivity type is n.

6. The apparatus of claim 4, wherein said first and second groups of contacts are each arranged in a line perpendicular to a direction of current flow in said resistor, and said first group of contacts is located near an edge of said wirebond pad.

7. IC apparatus comprising:

(a) a semiconductor substrate, having active circuitry formed thereon;

(b) a resistor including a layer of polysilicon disposed over said substrate;

(c) a wirebond pad, said wirebond pad being remote from said active circuitry;

(d) a first group of contacts, contacting said wirebond pad to said resistor; and

(e) a second group of contacts, contacting said resistor to other circuitry located on said substrate;

wherein said wirebond pad is substantially disposed over said resistor.

8. The apparatus of claim 7, wherein said polysilicon is doped to a predetermined level.

9. The apparatus of claim 7, wherein said first and second groups of contacts are each arranged in a line perpendicular to a direction of current flow in said resistor, and said first group of contacts is located near an edge of said wirebond pad.

10. IC apparatus comprising:

(a) a semiconductor substrate of a first conductivity type, said substrate having active circuitry formed thereon;

(b) a resistor including a well of a second conductivity type in said substrate;

(c) a wirebond pad, said wirebond pad being remote from said active circuitry;

(d) a first group of contacts, contacting said wirebond pad to said resistor; and

(e) a second group of contacts, contacting said resistor to other circuitry located on said substrate;

wherein said wirebond pad is substantially disposed over said resistor.

11. The apparatus of claim 10, wherein said first conductivity type is p and said second conductivity type is n.

12. The apparatus of claim 10, wherein said first and second groups of contacts are each arranged in a line perpendicular to a direction of current flow in said resistor, and said first group of contacts is located near an edge of said wirebond pad.