Vertical cavity surface emitting lasers with electrically conducting mirrors

• US 5,068,868 A
• Filed: 05/21/1990
• Issued: 11/26/1991
• Est. Priority Date: 05/21/1990
• Status: Expired due to Term

• Current Assignee: American Telephone & Telegraph Company (AT&T, Inc.)
• Original Assignee: AT&T, Inc.
• Inventors: Tu, Li Wei, Zydzik, George J., Deppe, Dennis G., Feldman, Leonard C., Kopf, Rose F., Schubert, Erdmann F.
• Primary Examiner(s): EPPS, GEORGIA Y
• Application Number:
  US07/526,204
• Time in Patent Office: 554 Days
• Field of Search: 372/45, 372/46, 11/96, 11/43, 357/4, 357/17
• US Class Current: 372/45.01
• CPC Class Codes: H01S 5/18361 Structure of the reflectors, e.g. hybrid mirrors
• CPC Class Codes: H01S 5/18375 based on metal reflectors
• CPC Class Codes: H01S 5/18377 comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers
• CPC Class Codes: H01S 5/18394 Apertures, e.g. defined by the shape of the upper electrode

Abstract

This invention is a semiconductor vertical cavity surface emitting laser comprising a lasing cavity with an active layer, a bottom (rear) mirror and a top (front) mirror, and a front and rear electrodes for applying excitation current in direction substantially parallel to the direction of optical propagation. In accordance with this invention the front mirror comprises a thin, semitransparent metal layer which also acts as the front electrode. The metal layer is upon a highly doped layer forming a non-alloyed ohmic contact. The metal is selected from Ag and Al and is deposited in thickness ranging from 5 to 55 nm. The VCSEL is a semiconductor device wherein the semiconductor material is a III-V or II-VI compound semiconductor. For a VCSEL with GaAs active layer, the light output from the front metal mirror/electrode side yields a high external differential quantum efficiency as high as 54 percent. This is the highest quantum efficiency obtained in VCSEL structures. Quantum efficiencies on the oder of 10 to 30 percent are typical for prior art VCSEL structures. The VCSEL is suitable for fabrication utilizing planar technology.

Claims

1. In a semiconductor vertical cavity surface emitting laser comprising at least one semiconductor selected from GaAs, GaAlAs, GaInAs, InP, InGaPAs and other related Group III-V and Group II-VI compound semiconductor, a plurality of layers including an active region which generates optical radiation and a rear mirror which reflects said radiation,

said laser further comprises

a front mirror of a metal which forms a non-alloyed ohmic contact to the semiconductor body and serves simultaneously as a front electrode of the laser, and

a rear electrode for applying, in unity with the front mirror, excitation current in direction substantially perpendicular to the active region and substantially parallel to the direction of propagation of optical radiation,

wherein said front mirror comprises a layer of highly reflective metal deposited in a thickness permitting transmission of optical radiation through the front mirror in direction perpendicular to the active region, said metal layer consisting essentially of a metal selected from the group consisting of silver and aluminum and being from 5 to 50 nm thick.

2. The laser of claim 1, in which said semi-transparent metal layer comprises silver.

3. The laser of claim 2, in which said Ag layer is about 40 nm thick.

4. The laser of claim 1, in which said rear mirror is a multilayer distributed Bragg reflection mirror comprising from 10 to 40 pairs of quarter wave layers with different index of refraction.

5. The laser of claim 4, in which said active region comprises GaAs and said rear mirror comprises pairs of quarter wave layers selected from AlAs and GaAs and from AlAs and Al₀.05 Ga₀.95 As.

6. The laser of claim 1, in which a multilayer distributed Bragg reflection (DBR) structure comprising from 2 to 20 pairs of quarter wave layers with different index of refraction within each pair is interposed between the active region and the front mirror.

7. The laser of claim 6, in which said DBR structure comprises pairs of layers selected from AlAs and GaAs or from AlAs and Al₀.05 Ga₀.95 As.

8. The vertical cavity laser of claim 1 in which said semiconductor layers are grown on a semiconductor substrate by molecular beam epitaxy.

9. In a semiconductor vertical cavity surface emitting laser, wherein said semiconductor comprises at least one semiconductor selected from GaAs, GaAlAs, GaInAs, InP, InGaPAs and other related group III-V and II-VI compound semiconductors, a plurality of layers comprising in an ascending order from a semiconductor substrate

a multilayer distributed Bragg reflective (DBR) rear mirror upon the substrate,

an active region which generates an optical radiation, said active region being confined between a first and a second confining layers,

a highly doped contacting layer, and

a front mirror comprising a layer of a metal which forms a non-alloyed ohmic contact to said contacting layer and serves simultaneously as a front electrode of the laser, said metal layer being of highly reflective metal deposited in a thickness permitting transmission of said optical radiation through the front mirror in direction perpendicular to the active region, said metal layer consisting essentially of a metal selected from the group consisting of silver and aluminum and being from 5 to 50 nm thick.

10. The laser of claim 9, in which said metal is silver.

11. The laser of claim 9, in which said Ag layer is about 40 nm thick.

12. The laser of claim 9, in which said rear mirror is a multilayer distributed Bragg reflection mirror comprising from 10 to 40 pairs of quarter wave layers with different index of refraction in each pair.

13. The laser of claim 12, in which said active region is GaAs and said rear mirror comprises pairs of quarter wave layers selected from AlAs and GaAs and from AlAs and Al₀.05 Ga₀.95 As.

14. The laser of claim 9 in which a multilayer distributed Bragg reflection structure comprising from 2 to 20 pairs of quarter wave layers with different index of refraction is interposed between the active region and the front mirror.

15. The laser of claim 14, in which said DBR structure comprises pairs of layers selected from AlAs and GaAs and from AlAs and Al₀.05 Ga₀.95 As.

16. The laser of claim 9 in which said semiconductor layers are grown on a semiconductor substrate by molecular beam epitaxy.

17. In a semiconductor vertical cavity surface emitting laser, wherein said semiconductor comprises at least one semiconductor selected from GaAs, GaAlAs, GaInAs, InP, InGaPAs and other related group III-V and group II-VI compound semiconductors, a plurality of layers including an active region which generates optical radiation, a rear mirror which reflects said radiation, a front mirror which partially reflects and partially transmits said radiation in direction perpendicular to the active region, the front mirror being of a metal which forms a non-alloyed ohmic contact to the semiconductor body and serves simultaneously as a front electrode of the laser, and a rear electrode for applying in unity with the front mirror an excitation current in direction substantially perpendicular to the active region and substantially parallel to the direction of propagation of optical radiation,

in which said front mirror comprises a layer of highly reflective metal consisting essentially of a metal selected from the group consisting of silver and aluminum and being from 5 to 50 nm thick.

18. The laser of claim 17, in which said front mirror metal comprises silver.

19. The laser of claim 18, in which said Ag layer is about 40 nm thick.

20. The vertical cavity laser of claim 17 in which said semiconductor layers are grown on a semiconductor substrate by molecular beam epitaxy.