Surface-emitting laser diode

• US 5,068,869 A
• Filed: 07/14/1988
• Issued: 11/26/1991
• Est. Priority Date: 06/19/1987
• Status: Expired due to Fees

• Current Assignee: Lockheed Martin Space Operations Company (Martin Marietta Corporation), Regents of the University of California (University of California)
• Original Assignee: Lockheed Martin Space Operations Company (Martin Marietta Corporation)
• Inventors: Wang, Shing C., Wang, Shyh, Hsin, Wei, Ogura, Mutsuo
• Primary Examiner(s): Davie, James W.
• Application Number:
  US07/206,386
• Time in Patent Office: 1,230 Days
• Field of Search: 372/45, 372/46, 372/50, 372/92, 372/108
• US Class Current: 372/45.01
• CPC Class Codes: H01S 5/0424 lateral current injection
• CPC Class Codes: H01S 5/18341 Intra-cavity contacts
• CPC Class Codes: H01S 5/18352 Mesa with inclined sidewall
• CPC Class Codes: H01S 5/423 having a vertical cavity

Abstract

A surface-emitting semiconductor laser diode has a vertical multilayer active region and a lateral buried heterojunction. Effective carrier confinement to the active region is achieved, thereby permitting laser action at room temperature under continuous-wave operation with a low threshold current of about 2 mA.

Claims

1. A surface-emitting laser diode comprising:

a) a semiconductor substrate made of a binary compound substantially consisting of a first element from Group III and a second element from Group V of the Periodic Table of Elements;

b) an active region formed on a surface of said substrate, said active region being generally vertical with respect to said surface of said substrate, said active region consisting of a plurality of pairs of first and second layers formed consecutively one upon the other, each first layer being made of a multinary compound substantially consisting of at least three elements all of said elements of said multinary compound being from Groups III and V of the Periodic Table of Elements, at least one of said elements of said multinary compound being from Group III and at least another one of said elements of said multinary compound being from Group V, each second layer substantially consisting of said binary compound of which said substrate is made, said active region thereby functioning as a resonant cavity;

c) a cladding structure formed on said substrate circumjacent said active region, said cladding structure consisting of a semiconductor material having a wider energy gap than said multinary compound of which said first layers of said active region are made, said cladding structure having a p-type region and an n-type region, said p-type and n-type regions being separated from each other within said cladding structure, said p-type and n-type regions being in contact with said active region to form a lateral buried heterojunction with said active region, said cladding structure thereby functioning to inject an electrical current so as to generate said laser beam and to confine said laser beam within said active region for emission in a direction substantially perpendicular to said surface of said substrate;

d) a first electrode formed on said p-type region of said cladding structure; and

e) a second electrode formed on said n-type region of said cladding structure.

2. The laser diode of claim 1 wherein said semiconductor substrate is made of gallium arsenide.

3. The laser diode of claim 2 wherein said first layers of said active region are made of an aluminum gallium arsenide compound.

4. The laser diode of claim 3 wherein said second layers of said active region are made of gallium arsenide.

5. The laser diode of claim 3 wherein said cladding structure is made of an aluminum gallium arsenide compound having a wider energy gap than said first layers of said active region.

6. The laser diode of claim 4 wherein said first layers of said active region are made of Al₀.3 Ga_O.7 As, and wherein said cladding structure is made of Al_O.4 Ga_O.6 As.

7. The laser diode of claim 1 wherein said semiconductor substrate is made of indium phosphide.

8. The laser diode of claim 7 wherein said first layers of said active region are made of an InGaAsP compound.

9. The laser diode of claim 8 wherein said second layers of said active region are made of indium phosphide.

10. The laser diode of claim 8 wherein said cladding structure is made of an InP compound having a wider energy gap said first layers of said active region.

11. The laser diode of claim 9 wherein said first layers of said active region are made of an InGaAsP compound, and wherein said cladding structure is made of indium phosphide.

12. A laser beam-generating device comprising an array of surface-emitting laser diodes formed on a semiconductor substrate, said substrate being made of a binary compound substantially consisting of a first element from Group III and a second element from Group V of the Periodic Time of Elements;

;

each of said surface-emitting laser diodes of said array comprising an active region formed on a surface of said substrate, said active region being generally vertical with respect to said surface of said substrate, said active region consisting of a plurality of pairs of first and second layers formed consecutively one upon the other, each first layer being made of a multinary compound substantially consisting of at least three elements, all of said elements of said multinary compound being from Groups III and V of the Periodic Table of Elements, at least one of said elements of said multinary compound being from Group III and at least another one of said elements of said multinary compound being from Group V, each second layer substantially consisting of said binary compound of which said substrate is made, said active region functioning as a resonant cavity;

a cladding structure being formed on said substrate circumjacent said active region of each of said surface-emitting laser diodes of said array, said cladding structure consisting of a semiconductor material having a wider energy gap than said multinary compound of which said first layers of said active region are made, said cladding structure having a p-type region and an n-type region, said p-type and n-type regions being separated from each other within said cladding structure, said p-type and n-type regions being in contact with said active region to form a lateral buried heterojunction with said active region said cladding structure functioning to inject an electrical current so as to generate said laser beam and to confine said laser beam within said active region for emission in a direction substantially perpendicular to said surface of said substrate;

a first electrode being formed on said p-type region and a second electrode being formed on said n-type region of said cladding structure circumjacent said active region of each of said surface-emitting laser diodes of said array.