Microwave chemical vapor deposition apparatus and feedback control method

• US 5,069,928 A
• Filed: 01/27/1989
• Issued: 12/03/1991
• Est. Priority Date: 02/01/1988
• Status: Expired due to Term

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Echizen, Hiroshi, Takaki, Satoshi
• Primary Examiner(s): Beck, Shrive
• Assistant Examiner(s): Owens, Terry J.
• Application Number:
  US07/302,244
• Time in Patent Office: 1,040 Days
• Field of Search: 118/719, 118/723, 427/39, 427/45.1, 427/38, 315/111.11, 315/111.21, 315/111.71, 315/39, 219/10.55 A, 219/10.55 F, 219/10.55 R
• US Class Current: 427/575
• CPC Class Codes: C23C 16/511 using microwave discharges
• CPC Class Codes: H01J 37/32357 Generation remote from the workpiece, e.g. down-stream

Abstract

A microwave plasma CVD apparatus includes a hermetically sealed vacuum vessel, a device for evacuating the vacuum vessel, and a device for introducing microwaves through a microwave transmission circuit into the vacuum vessel to produce a plasma within the vacuum vessel. The microwave transmission circuit includes a cavity resonator integrally provided with two matching circuits, one of which is a plunger for varying the length of the cavity resonator and the other of which is a pair of sliding matching irises. Feedback in the apparatus can be controlled by driving one of the matching circuits for rough matching of the microwave impedance and driving the other matching circuit for fine matching of the microwave impedance, so that the calculated ratio of the reflected power to the input power, based on a signal from a power monitor, is reduced to a minimum.

Claims

1. A microwave plasma CVD apparatus comprising:

(a) a hermetically sealed vacuum vessel;

(b) raw material gas introducing means for introducing a raw material gas into the vacuum vessel;

(c) evacuating means for evacuating said vacuum vessel; and

(d) microwave introducing means for introducing microwaves through a microwave transmission circuit into said vacuum vessel to generate a plasma within the vacuum vessel;

said microwave transmission circuit including a cavity resonator integrally provided with two matching circuits;

said matching circuits comprising a plunger for varying the length of said cavity resonator and a pair of sliding matching irises.

2. The microwave plasma CVD apparatus according to claim 1 wherein said cavity resonator is a cylindrical cavity resonator and said sliding matching irises are cylindrical sliding matching irises.

3. The microwave plasma CVD apparatus according to claim 1, wherein said cavity resonator is a rectangular cavity resonator and said sliding matching irises are flat sliding matching irises.

4. The microwave plasma CVD apparatus according to claim 1, wherein the microwave introducing means comprises a continuously oscillating microwave oscillator and wherein a microwave transmissive bell jar defining a space for discharge is provided within the cavity resonator.

5. The microwave plasma CVD apparatus according to claim 1, wherein said microwave transmission circuit includes power monitor means and a feedback control means to sequentially (i) calculate the ratio of the reflected power to the input power on the basis of a signal provided by the power monitor means, (ii) drive one of the matching circuits for rough matching of the microwave input impedance, and (iii) drive the other matching circuit for fine matching of the microwave impedance so that the calculated ratio is reduced to a minimum.

6. Method for controlling feedback in the apparatus of claim 5 comprising the steps of:

(a) calculating the ratio of the reflected power to the input power on the basis of a signal provided by the power monitor means;

(b) driving one of the matching circuits for rough matching of the microwave impedance; and

(c) driving the other matching circuit for fine matching of the microwave impedance so that the calculated ratio is reduced to a minimum.