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Method of making dense flash EEprom semiconductor memory structures

  • US 5,070,032 A
  • Filed: 03/15/1989
  • Issued: 12/03/1991
  • Est. Priority Date: 03/15/1989
  • Status: Expired due to Term
First Claim
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1. A method of forming a two dimensional array of flash electrically erasable and programmable read only memory cells on a semiconductor substrate, comprising the steps of:

  • forming a first plurality of continuous elongated parallel strips of conductive material on said substrate in a manner to be insulated therefrom by a first dielectric layer,forming a second plurality of continuous elongated parallel strips of conductive material on said substrate and over said first plurality of conductive strips in a manner to be insulated therefrom by a second dielectric layer, said first and second plurality of strips having their lengths oriented substantially orthogonal to each other,thereafter forming spacers along opposing edges of adjacent ones of said second plurality of parallel strips and extending toward each other but leaving a defined space therebetween, andthereafter forming a gap in said first plurality of strips through the space defined by the spacers, thereby forming electrically isolated floating gates from said first plurality of strips.

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