×

Programmable memory matrix employing voltage-variable resistors

  • US 5,070,383 A
  • Filed: 01/10/1989
  • Issued: 12/03/1991
  • Est. Priority Date: 01/10/1989
  • Status: Expired due to Term
First Claim
Patent Images

1. A programmable memory array comprisinga monocrystalline semiconductor substrate,a plurality of word lines formed in said substrate by dopants of a first conductivity type, anda plurality of stacked diode and voltage-variable resistor structures on each word line with a bit contact to each stacked diode and voltage-variable resistor,each diode comprising a doped polycrystalline layer of opposite conductivity type in contact with a word line and an ion-implanted region of opposite conductivity type in said word line thereby forming a p-n junction with said word line, and each voltage-variable resistor comprising an amorphized surface region in said polysilicon layer.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×