×

Surface emitting, low threshold (SELTH) laser diode

  • US 5,070,509 A
  • Filed: 08/09/1990
  • Issued: 12/03/1991
  • Est. Priority Date: 08/09/1990
  • Status: Expired due to Fees
First Claim
Patent Images

1. A surface emitting semiconductor laser diode structure formed on a substrate, the structure comprising:

  • a first section operable for wavelength tuning and an adjacent second section for effecting surface-emission of laser light, the first and second sections including;

    an optical waveguide having an active layer for the generation of laser light and a separate confinement heterostructure (SCH) having plural heterojunctions operatively connected to the optical waveguide;

    means for providing periodic variation in the refractive index of at least one of the surrounding heterojunctions to provide optical coupling of the laser light to the second section;

    an index-guiding buried heterostructure operatively connected to the optical waveguide for partial confinement of the laser light; and

    means operably connected to the second section for effecting current flow therethrough for inducing emission of laser light.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×