Method for carbon film production

• US 5,073,241 A
• Filed: 01/28/1987
• Issued: 12/17/1991
• Est. Priority Date: 01/31/1986
• Status: Expired due to Fees

• Current Assignee: Kabushiki Kaisha Meidensha
• Original Assignee: Kabushiki Kaisha Meidensha
• Inventors: Watanabe, Misuzu
• Primary Examiner(s): Nguyen, Nam X.
• Application Number:
  US07/007,747
• Time in Patent Office: 1,784 Days
• Field of Search: 204/192.15, 204/192.16, 204/192.22, 204/192.26, 204/192.27, 204/192.28, 204/192.29, 204/192.25, 204/298, 204/298.07
• US Class Current: 204/192.15
• CPC Class Codes: C23C 14/0057 using reactive gases other than O2, H2O, N2, NH3 or CH4
• CPC Class Codes: C23C 14/0605 Carbon

Abstract

A carbon film producing method utilizing a reactive sputtering process for projecting carbon particles from a graphite target electrode to deposite a very thin layer on a substrate. The reactive sputtering process is performed at a predetermined pressure in an atmosphere of hydrogen gas mixed at a predetermined ratio to another kind of gas.

Claims

1. A method of producing a carbon film on a substrate, comprising the steps of:

placing the substrate in a vacuum chamber having a graphite target electrode placed therein;

evacuating the vacuum chamber to a predetermined pressure;

introducing a gaseous mixture into the vacuum chamber to produce a gaseous atmosphere therein at a pressure ranging from 0.7 Pa to 665 Pa, the gaseous mixture including dibrorane gas mixed at a ratio ranging from 1 ppm to 20 ppm to hydrogen gas; and

releasing atomic particles from the graphite target electrode through a reactive sputtering process performed in the gaseous atmosphere, thereby depositing a carbon film on the substrate.

2. A method of producing a carbon film on a substrate, comprising the steps of:

placing the substrate in a vacuum chamber having a graphite target electrode placed therein;

evacuating the vacuum chamber to a predetermined pressure;

introducing a gaseous mixture into the vacuum chamber to produce a gaseous atmosphere therein at a pressure ranging from 0.7 Pa to 665 Pa, the gaseous mixture including oxygen gas mixed at a mixing ratio ranging from 1 ppm to 100 ppm to hydrogen gas; and

releasing atomic particles from the graphite target electrode through reactive sputtering process performed in the gaseous atmosphere, thereby depositing a carbon film on the substrate.

3. A method of producing a carbon film on a substrate, comprising the steps of:

placing the substrate in a vacuum chamber having a graphite target electrode placed therein;

evacuating the vacuum chamber to a predetermined pressure;

introducing a gaseous mixture into the vacuum chamber to produce a gaseous atmosphere therein at a pressure ranging from 0.7 Pa to 665 Pa, the gaseous mixture including carbon fluoride gas mixed at a mixing ratio ranging from 1 ppm to 100 ppm to hydrogen gas; and

releasing atomic particles from the graphite target electrode through a reactive sputtering process performed in the gaseous atmosphere, thereby depositing a carbon film on the substrate.

4. The method as claimed in claim 3, wherein the carbon fluoride gas is one selected from a group consisting CF₄, C₂ F₆, C-C₄ F₈, C₅ F₁₂, and CHF₃.