Piezoresistive transducer with low drift output voltage

• US 5,074,152 A
• Filed: 12/24/1990
• Issued: 12/24/1991
• Est. Priority Date: 12/24/1990
• Status: Expired due to Term

• Current Assignee: Freescale Semiconductor, Inc. (NXP Semiconductors NV)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Ramsland, Eric A., Ellner, Stuart, Hoekstra, Laurel L., Yee, Renwin J.
• Primary Examiner(s): RAEVIS, ROBERT R
• Application Number:
  US07/633,828
• Time in Patent Office: 365 Days
• Field of Search: 73/765, 73/766, 73/862.63, 73/708, 73/721, 73/727, 73/754, 73/DIG. 4, 338/3
• US Class Current: 73/766
• CPC Class Codes: G01L 9/0054 integral with a semiconducting diaphragm

Abstract

Leakage current is reduced in a piezoresistive transducer by forming a leakage barrier around a piezoresistive element of a piezoresistive transducer. The leakage barrier prevents the formation of a parasitic leakage path in the substrate thereby reducing the leakage current flowing through sections of the piezoresistive element, and stabilizing the resistance value and the output voltage of the piezoresistive transducer.

Claims

1. A piezoresistive transducer having an output voltage that has low drift comprises:

a lightly doped silicon substrate of a first conductivity type having a flexible silicon diaphragm on a first surface of the substrate;

a four terminal piezoresistive element of a second conductivity type, the element having two sections which are formed on a second surface of the substrate;

a first straight section of the piezoresistive element having a contact at each distal end;

a second straight section of the piezoresistive element having a contact at each distal end wherein the second section is shorter than the first section and has a midpoint that crosses perpendicularly to a midpoint of the first section;

contact material of the second conductivity type that couples the contacts to metal conductors;

an irregular periphery formed by the piezoresistive element, the contact material, and the contacts;

a leakage buffer formed from a continuous strip of highly doped material of the first conductivity type that surrounds the irregular periphery and has material of the first conductivity type projecting from the continuous strip toward the perpendicular crossing;

a dielectric that covers the second surface of the substrate; and

a fluorosilicone material that covers the dielectric.

2. The piezoresistive transducer of claim 1 wherein the leakage buffer is formed as one continuous section enclosing distal boundaries of the irregular periphery, and has a plurality of projections from the continuous section toward the midpoint of the first straight section and second straight section but not touching the first straight section and second straight section.

3. The piezoresistive transducer of claim 1 wherein the leakage buffer is formed as one continuous section enclosing distal boundaries of the irregular periphery, and has a plurality of projections from the continuous section toward the midpoint of the first straight section and second straight section wherein at least one projection touches the first straight section proximal to the midpoint and at least one projection touches the second straight section proximal to the midpoint.

4. The piezoresistive transducer of claim 1 wherein the substrate is N-type material and the piezoresistive element is P-type material.

5. The piezoresistive transducer of claim 1 wherein the leakage buffer is heavily doped N-type material.

6. A method of reducing drift in piezoresistive transducers which comprises:

providing a silicon substrate of a first conductivity type having a thin silicon diaphragm on a first surface of the substrate;

providing a four terminal piezoresistive element of a second conductivity type on a second surface of the substrate wherein the piezoresistive element has two straight sections intersecting at right angles;

reducing leakage current that flows in a parasitic conduction channel in the substrate by using a leakage buffer that is formed by positioning areas of highly doped material of the first conductivity type at least adjacent to each right angle of the intersection;

covering the second surface of the substrate with a dielectric; and

covering the dielectric with a protective coating.

7. The method of claim 6 wherein providing a four terminal piezoresistive element includes providing a contact at distal ends of an elongated section of the resistive element, a contact at distal ends of a short section of the resistive element, and crossing a midpoint of the short section perpendicularly with a midpoint of the elongated section.

8. The method of claim 6 wherein covering the dielectric with a protective coating includes covering the dielectric with a fluorosilicone gel.

9. The method of claim 6 wherein providing a silicon substrate includes providing a lightly doped N-type silicon substrate.

10. A low drift piezoresistive transducer which comprises:

a semiconductor substrate of a first conductivity type having a thin silicon diaphragm on a first surface of the substrate;

a piezoresistive element of a second conductivity type formed on a second surface of the substrate;

means for connecting the piezoresistive element to bonding pads;

a leakage buffer formed of highly doped material of the first conductivity type that surrounds a peripheral boundary formed by the piezoresistive element and the means for connecting;

a dielectric that covers at least the piezoresistive element; and

a silicone gel that covers the dielectric.

11. The low drift piezoresistive transducer of claim 10 wherein the leakage buffer is formed in a first section that is a continuous strip of material, and a second section having a plurality of strips of the material projecting from the continuous strip toward a central point of the piezoresistive element.

12. The low drift piezoresistive transducer of claim 10 wherein the piezoresistive element includes a four terminal element having two sections that are perpendicular to each other.

13. The low drift piezoresistive transducer of claim 10 wherein the dielectric is silicon dioxide.

14. The low drift piezoresistive transducer of claim 10 wherein the silicone gel is a fluorosilicone gel.

15. A piezoresistive transducer having an output voltage with low drift which comprises:

a piezoresistive element having a first straight section and a second straight section intersecting at right angles; and

leakage barriers that are highly doped regions of a material that is of opposite conductivity to the piezoresistive element wherein the leakage barriers are positioned inside each right angle formed by the intersection and in a proximity of each right angle.

16. The piezoresistive transducer of claim 15 wherein the leakage barriers radiate from the intersection, and are interconnected at each distal end.

17. The piezoresistive transducer of claim 15 wherein the leakage barriers are interconnected.

18. A piezoresistive transducer having an output voltage with low drift which comprises:

at least first and second resistive areas wherein the areas are interconnected to form a piezoresistive element; and

a leakage barrier that is a semiconductor material which is positioned between the at least first resistive area and the at least second resistive area to prevent leakage current from flowing between the resistive areas.