Method for forming semiconductor contacts by electroless plating

• US 5,075,259 A
• Filed: 08/22/1989
• Issued: 12/24/1991
• Est. Priority Date: 08/22/1989
• Status: Expired due to Term

• Current Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Moran, John D.
• Primary Examiner(s): Chaudhuri, Olik
• Assistant Examiner(s): Graybill, David E.
• Application Number:
  US07/396,713
• Time in Patent Office: 854 Days
• Field of Search: 437/230, 437/245, 437/247, 437/248, 437/946, 437/966, 437/187, 437/176, 357/67, 357/71, 427/98, 156/278, 174/52.4
• US Class Current: 438/655
• CPC Class Codes: H01L 21/288 from a liquid, e.g. electrolytic deposition

Abstract

Semiconductor device structures having very smooth surfaces and very high doping levels of opposite types present on the same wafer may be plated in the same electroless plating bath without differentiation between the N and P regions or rough and smooth surface regions. This is achieved by a pre-treatment involving coating the wafer surface with a metal salt (e.g., NiCl in glycol and water) and reducing the metal salt in an oxygen free atmosphere (e.g., hydrogen) at a temperature (e.g., >300° C. for Si) sufficient to promote formation of an intermetallic between the reduced metal and the semiconductor substrate. This provides very uniform and effective nucleation sites for the subsequent electroless plating process irrespective of the smoothness, doping type and doping density of the semiconductor surface.

Claims

1. A method for forming contacts on semiconductors, comprising:

applying a reducible cation bearing compound to a surface of the semiconductor;

reducing the compound independent of the surface in an oxygen free ambient;

reacting the cation reduced from the compound with the semiconductor surface to activate the surface for electroless plating; and

electrolessly plating the activated surface with a further metal.

2. The method of claim 1 wherein the compound comprises nickel or cobalt or mixtures thereof.

3. The method of claim 1 wherein the semiconductor is silicon and the reacting step produces a silicide of the reduced metal on the surface.

4. The method of claim 3 wherein the electrolessly plating step is surface catalyzed by the metal silicide.

5. The method of claim 1 further comprising, after the electrolessly plating step, alloying the further metal with the semiconductor.

6. A method for simultaneously forming contacts on semiconductor regions of opposite conductivity type, comprising:

providing a semiconductor substrate having a first surface region of a first type and a second surface region of a second opposite type and some residual oxide on at least one of the first and second surface regions;

coating the first and second regions with a reducible cation bearing compound suitable for surface activation;

reducing the compound independent of the surface regions in an oxygen free ambient;

reacting the cation reduced from the compound with the first and second regions to activate the surface thereof for electroless plating; and

simultaneously electrolessly plating the first and second region with a further metal.

7. The method of claim 6 wherein the compound comprises nickel or cobalt or a combination thereof.

8. The method of claim 6 wherein the semiconductor is silicon and the reacting step produces a silicide on the first and second regions.

9. The method of claim 8 wherein the electrolessly plating occurs preferentially on the silicide.

10. The method of claim 6 further comprising, after the electrolessly plating step, alloying the further metal with the first and second regions.

11. A method for simultaneously forming contacts on semiconductor regions of opposite conductivity type, comprising:

providing a semiconductor substrate having a first surface region of a first type and a second surface region of a second opposite type, wherein at least one of the regions is heavily doped;

coating the first and second surface regions with a material containing a cation suitable for forming a compound with the substrate which can catalyze an electroless plating process thereon and thereafter performing the following steps on the first and second regions at the same time;

reducing the compound independent of the first and second surface regions and without reacting with the heavily doped region, in an oxygen free ambient to yield cation;

reacting the cation to form a compound with the substrate; and

electrolessly plating the compound with a further metal.

12. The method of claim 11 wherein the coating step comprises applying the same material to the first and second regions.

13. The method of claim 11 wherein the coating step comprises applying different materials to the first and second regions.

14. The method of claim 11 wherein the material comprises nickel or cobalt or a combination thereof.

15. The method of claim 11 wherein the semiconductor is silicon and the reacting step produces one or more silicides of the cation on the first and second regions.

16. The method of claim 15 wherein electroless plating occurs preferentially on the metal silicide.

17. The method of claim 11 further comprising, after the electrolessly plating step, alloying the further metal with the first and second surface regions.

18. The method of claim 11 wherein both regions are heavily doped.

19. The method of claim 11 wherein the providing step comprises providing smoothly polished first and second surface regions.

20. The method of claim 11 wherein the first and second regions are on opposed faces of the substrate.