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Quantum well optical device on silicon

  • US 5,075,743 A
  • Filed: 06/06/1989
  • Issued: 12/24/1991
  • Est. Priority Date: 06/06/1989
  • Status: Expired due to Term
First Claim
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1. An optical semiconductor structure comprising:

  • a) a silicon base layer;

    b) a silicon compound layer formed on said silicon base layer, said silicon compound layer including at least a first window therein;

    c) at least a first epitaxially grown crystalline structure formed on said silicon base layer in said first window, said crystalline structure being formed from a material that is near lattice matched with said silicon base layer; and

    ,d) at least a first quantum well layer formed in said first crystalline structure which forms a first active light emitting region for said optical semiconductor structure.

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