Quantum well optical device on silicon

• US 5,075,743 A
• Filed: 06/06/1989
• Issued: 12/24/1991
• Est. Priority Date: 06/06/1989
• Status: Expired due to Term

• Current Assignee: Cornell Research Foundation Incorporated (Cornell University)
• Original Assignee: Cornell Research Foundation Incorporated (Cornell University)
• Inventors: Behfar-Rad, Abbas
• Primary Examiner(s): Hille, Rolf
• Assistant Examiner(s): Tran, MinhLoan
• Application Number:
  US07/362,252
• Time in Patent Office: 931 Days
• Field of Search: 357/16, 357/17, 357/4, 372/43, 372/45
• US Class Current: 257/97
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01L 27/156 two-dimensional arrays
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01S 5/021 Silicon based substrates
• CPC Class Codes: H01S 5/3403 having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
• CPC Class Codes: H01S 5/343 in AIIIBV compounds, e.g. AlGaAs-laser , InP-based laser
• CPC Class Codes: H01S 5/34326 with a well layer based on InGa(Al)P, e.g. red laser
• CPC Class Codes: H01S 5/423 having a vertical cavity

Abstract

A semiconductor structure for use in forming optical devices, such as lasers and LEDs, is disclosed. The structure includes a silicon base on which is formed by epitaxial growth, a crystalline material (such as AlGaP) structure or region that is nearly lattice matched to silicon. One or more quantum wells are formed in the crystalline material structure. A quantum well can be made of a direct bandgap material or an indirect bandgap material with isoelectronic centers (IECs). The regions on either side of the quantum wells can be graded to form a graded index separate confinement heterostructure (GRINSCH). To reduce problems of warpage, the crystalline material can be epitaxially grown in windows formed in a layer of silicon nitride or silicon dioxide on the silicon substrate. A multi-color array of optical devices can be provided with this structure.

Claims

1. An optical semiconductor structure comprising:

a) a silicon base layer;

b) a silicon compound layer formed on said silicon base layer, said silicon compound layer including at least a first window therein;

c) at least a first epitaxially grown crystalline structure formed on said silicon base layer in said first window, said crystalline structure being formed from a material that is near lattice matched with said silicon base layer; and

,

d) at least a first quantum well layer formed in said first crystalline structure which forms a first active light emitting region for said optical semiconductor structure.

2. The semiconductor structure of claim 1, further including:

e) at least a second window in said silicon compound layer;

f) at least a second epitaxially grown crystalline structure formed on said silicon base layer in said second window, said second crystalline structure also being formed from a material that is near lattice matched with said silicon base layer; and

g) at least a second quantum well layer formed in said second crystalline structure which forms a second active light emitting region for said optical semiconductor structure.

3. The semiconductor structure of claim 1, further including at least a third quantum well layer formed in said first crystalline structure, and at least a fourth quantum well layer formed in said second crystalline structure;

and wherein, said first and second quantum well layers emit light of a first wavelength, and said third and fourth quantum well layers emit light of a second wavelength.

4. The semiconductor structure of claim 1, wherein said silicon compound is chosen from the group consisting of silicon dioxide and silicon nitride.

5. An optical semiconductor structure comprising:

a) a silicon base layer;

b) an epitaxially grown crystalline structure disposed on said silicon base layer, said crystalline structure being composed of a material which is near lattice matched with said silicon base layer;

c) a first quantum well layer formed in said crystalline structure forming an active light emitting region for said optical semiconductor structure; and

d) first and second graded index regions on either side of said first quantum well layer in said crystalline structure which forms a graded index separate confinement heterostructure.

6. The optical semiconductor structure of claim 5 wherein said crystalline structure is formed from a material chosen from the group consisting of GaP, ZnS, or AlGaP.

7. The optical semiconductor structure of claim 5 wherein said quantum well layer is formed from direct bandgap material.

8. The optical semiconductor structure of claim 7 wherein said quantum well layer is lattice mismatched with silicon.

9. The structure of claim 5 wherein said optical semiconductor structure is a laser.

10. The structure of claim 5 wherein said optical semiconductor structure is an LED.

11. An optical semiconductor structure comprising:

a) a silicon base layer;

b) an epitaxially grown crystalline structure disposed on said silicon base layer, said crystalline structure being composed of a material that is near lattice matched with said silicon base layer; and

,

c) at least a first quantum well layer formed in said crystalline structure forming an active light emitting region for said optical semiconductor structure, wherein said quantum well layer is formed from a material that is lattice mismatched with said crystalline structure, and has a thickness less than a critical thickness above which dislocations will form between said quantum well layer and said crystalline structure.

12. The optical semiconductor structure of claim 11 wherein said quantum well layer is formed from direct bandgap material.

13. The optical semiconductor structure of claim 12 wherein said crystalline structure is formed from AlGaP, and said quantum well layer is formed from GaAs and is less than approximately 100 angstroms thick.

14. The optical semiconductor structure of claim 11 wherein said quantum well layer is formed from indirect bandgap material with isoelectronic centers to allow radiative recombinations with reasonable efficiency.